Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion
Solowan, Hans-Michael
: Ambacher, Oliver (Editor); Schwarz, U.T.; Wöllenstein, J.
2002Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well
Malyarchuk, V.; Tomm, J.; Lienau, C.; Rinner, F.; Baeumler, M.
2002Photoluminescence topography of sulfur doped 2'' InP grown by the vertical gradient freeze technique
Sahr, U.; Mueller, G.; Grant, I.; Baeumler, M.; Jantz, W.
1996Structural limitations to local thermal diffusivities of diamond films
Verhoeven, H.; Hartmann, J.; Reichling, M.; Müller-Sebert, W.; Zachai, R.
1994Incorporation of Be into InxGa1-xAs /0.004 equal or smaller than x equal or smaller than 0.17/ studied by photoluminescence and resonant Raman spectroscopy of local vibrational modes.
Alvarez, A.L.; Wagner, J.; Calle, F.; Maier, M.; Gutierrez, G.; Sacedon, A.; Calleja, E.; Munoz, E.
1993Electronic and optical properties of low-dimensional semiconductor structures
Wagner, J.
1993Optical emission from the one-dimensional electron gas in narrow modulation-doped GaAs/'InGa'As/'AlGa'As quantum wires fabricated by lateral top barrier modulation
Wagner, J.; Behr, D.; Richards, D.; Bickl, T.; Forchel, A.; Emmerling, M.; Köhler, K.
1993Optical investigation of delta-doped In0.1Ga0.9As-Si/GaAs strained quantum wells.
Richards, D.; Maier, M.; Köhler, K.; Wagner, J.
1987Characterization of a-C - H films by raman and luminescence spectroscopy
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
1987Effect of barrier configuration on excitonic recombination in Ga0.47In0.53As/Al0.48In0.52As multi quantum well structures
Stolz, W.; Ploog, K.; Wagner, J.