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| 2021 | Inversion channel MOSFET on heteroepitaxially grown free-standing diamond
Zhang, Xufang; Matsumoto, Tsubasa; Nakano, Yuta; Noguchi, Hitoshi; Kato, Hiromitsu; Makino, Toshiharu; Takeuchi, Daisuke; Ogura, Masahiko; Yamasaki, Satoshi; Nebel, Christoph E.; Inokuma, Takao; Tokuda, Norio | Zeitschriftenaufsatz |
| 2021 | Metal organic chemical vapour deposition regrown large area GaN-on-GaN current aperture vertical electron transistors with high current capability
Doering, Philipp; Driad, Rachid; Reiner, Richard; Waltereit, Patrick; Mikulla, Michael | Zeitschriftenaufsatz |
| 2020 | Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications
Albrecht, M.; Perez, D.; Martens, R.C.; Bauer, A.J.; Erlbacher, T. | Konferenzbeitrag |
| 2020 | Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors
Schlichting, Holger; Kocher, Matthias; Weiße, Julietta; Erlbacher, Tobias; Bauer, Anton J. | Konferenzbeitrag |
| 2020 | SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation Study
Sledziewski, T.; Erlbacher, T. | Konferenzbeitrag |
| 2019 | Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar; Chen, Ximing; Zhao, Yanli; Li, Chengzhan; Dai, Xiaoping | Konferenzbeitrag |
| 2019 | Process and design optimization of SiC MOSFET for low on-state resistance
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton | Vortrag |
| 2018 | Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
Huerner, A.; Heckel, T.; Enduschat, A.; Erlbacher, T.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2017 | Analysis of the effect of TSV-induced stress on devices performance by direct strain and electrical measurements and FEA simulations
Kteyan, Armen; Mühle, Uwe; Gall, Martin; Sukharev, Valeriy; Radojcic, Riko; Zschech, Ehrenfried | Zeitschriftenaufsatz |
| 2016 | Slew rate control of a 600 V 55 mΩ GaN cascode
Endruschat, A.; Heckel, T.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; März, M.; Eckardt, B.; Frey, L. | Konferenzbeitrag |
| 2015 | Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent | Zeitschriftenaufsatz |
| 2014 | Empirical model for the effective electron mobility in silicon nanowires
Granzner, R.; Polyakov, V.M.; Schippel, C.; Schwierz, F. | Zeitschriftenaufsatz |
| 2014 | Variability-aware compact model strategy for 20-nm bulk MOSFETs
Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen | Konferenzbeitrag |
| 2013 | Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis
Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter | Konferenzbeitrag |
| 2013 | Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
| 2012 | Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A. | Poster |
| 2011 | Light switched plasma charging protection device for high-field characterization and flash memory protection
Sommer, S.P.; Paschen, U.; Figge, M.; Vogt, H. | Zeitschriftenaufsatz |
| 2010 | Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H. | Konferenzbeitrag |
| 2010 | Electrical characterization and reliability of nitrided-gate insulators for N- and P-type 4H-SiC MIS devices
Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T. | Konferenzbeitrag |
| 2009 | Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P. | Konferenzbeitrag |
| 2009 | Simulation assessment of process options for advanced CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2009 | UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
Schmitt, H.; Amon, B.; Beuer, S.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2008 | Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2008 | Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2008 | On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2008 | Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2008 | UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
Schmitt, H.; Amon, B.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Poster |
| 2002 | Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors
Burenkov, A.; Lorenz, J. | Konferenzbeitrag |
| 2000 | Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator
Yu, E.; Shen, J.; Walther, M.; Lee, T.; Zhang, R. | Zeitschriftenaufsatz |
| 1995 | Light dependence of partially depleted SOI-MOSFETs using SIMOX substrates
Werner, R.; Zimmermann, C.; Kalz, A. | Zeitschriftenaufsatz |
| 1992 | Einsatz von ANSYS beim Entwurf von Sensoren in der Mikrosystemtechnik
Erlebach, A.; Kunze, D.; Müller, M. | Konferenzbeitrag |
| 1992 | Gassensoren auf Siliziumbasis
Kohl, D.; Mokwa, W. | Zeitschriftenaufsatz |
| 1992 | The self-heating effect and its influence on the electrical properties of SOI MOSFETs
Berger, M.; Chai, Z. | Konferenzbeitrag |
| 1992 | SIMOX, a silicon-technology for high temperature
Burbach, G. | Konferenzbeitrag |
| 1991 | Gas-sensitive MOSFETs - an overview
Drost, S.; Endres, H.-E. | Konferenzbeitrag |
| 1991 | Gassensitive MOSFETs with an adsorbing dielectric layer
Drath, E.; Drost, S.; Endres, H.-E. | Konferenzbeitrag |
| 1991 | Gassensoren auf der Basis von Feldeffekttransistoren mit Heteropolysiloxanschichten
Drost, S. | Dissertation |
| 1990 | A charge-sheet capacitance model based on drain current modeling
Budde, W.; Lamfried, W.H. | Zeitschriftenaufsatz |
| 1990 | Dielektrische Gassensoren
Drost, S.; Endres, H.-E. | Zeitschriftenaufsatz |
| 1988 | MOSFET gas sensor with integrated temperature measurement and heating elements fabricated with standard CMOS technology
Dobos, K.; Mokwa, W.; Vogt, H.; Zhang, Y.; Zimmer, G.; Xiao, G. | Konferenzbeitrag |
| 1987 | Fabrication of halfmicron MOSFETs by means of X-ray lithography
Huber, H.-L.; Lauer, V.; Bauer, F.; Korec, J.; Balk, P. | Zeitschriftenaufsatz |
| 1987 | Half micrometer N-MOS technology using X-ray lithography
Huber, H.-L.; Lauer, V.; Bauer, F.; Korec, J.; Balk, P. | Konferenzbeitrag |