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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Industrialization of type-II superlattice infrared detector technology at Fraunhofer IAF
Walther, Martin; Daumer, Volker; Rutz, Frank; Stadelmann, Tim; Klinger, Vera; Wörl, Andreas; Niemasz, Jasmin; Kirste, Lutz; Rehm, Robert
Konferenzbeitrag
2019Type-II superlattices. A promising material for space applications
Daumer, Volker; Rutz, Frank; Wörl, Andreas; Niemasz, Jasmin; Müller, Raphael; Stadelmann, Tim; Rehm, Robert
Konferenzbeitrag
2016The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films
Rombach, J.; Papadogianni, A.; Mischo, M.; Cimalla, V.; Kirste, L.; Ambacher, O.; Berthold, T.; Krischok, S.; Himmerlich, M.; Selve, S.; Bierwagen, O.
Zeitschriftenaufsatz
2015Electrical conductivity and gas-sensing properties of Mg-doped and undoped single-crystalline In2O3 thin films: Bulk vs. surface
Rombach, J.; Bierwagen, O.; Papadogianni, A.; Mischo, M.; Cimalla, V.; Berthold, T.; Krischok, S.; Himmerlich, M.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Room temperature MBE deposition of Bi2Te3 and Sb2Te3 thin films with low charge carrier densities
Peranio, N.; Winkler, M.; Aabdin, Z.; König, J.; Böttner, H.; Eibl, O.
Zeitschriftenaufsatz
2011The development of 3rd gen IR detectors at AIM
Ziegler, J.; Eich, D.; Mahlein, M.; Schallenberg, T.; Scheibner, R.; Wendler, J.; Wenisch, J.; Wollrab, R.; Daumer, V.; Rehm, R.; Rutz, F.; Walther, M.
Konferenzbeitrag
2010Bi2Te3, Sb2Te3 and Bi2Te3/Sb2Te3 - Superlattices created using the nanoalloying approach
Winkler, M.; König, J.D.; Buller, S.; Schürmann, U.; Kienle, L.; Bensch, W.; Böttner, H.
Konferenzbeitrag
2010Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures
Lim, T.; Aidam, R.; Kirste, L.; Waltereit, P.; Müller, S.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2010GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O.
Zeitschriftenaufsatz
2010Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures
Kirste, L.; Lim, T.; Aidam, R.; Müller, S.; Waltereit, P.; Ambacher, O.
Zeitschriftenaufsatz
2009Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers - a challenge for MBE growth
Manz, C.; Yang, Q.K.; Rattunde, M.; Schulz, N.; Rösener, B.; Kirste, L.; Wagner, J.; Köhler, K.
Zeitschriftenaufsatz, Konferenzbeitrag
2009Transport properties of doped, nanostructured IV-VI epitaxial films grown by MBE
Koenig, J.D.; Winkler, M.; Boettner, H.
Zeitschriftenaufsatz
2007InGaAs/AlAsSb quantum cascade detectors operating in the near infrared
Giorgetta, F.R.; Baumann, E.; Hofstetter, D.; Manz, C.; Yang, Q.K.; Köhler, K.; Graf, M.
Zeitschriftenaufsatz
2007Solid source MBE growth on InP-based DHBTs for high-speed data communication
Aidam, R.; Lösch, R.; Driad, R.; Schneider, K.; Makon, R.E.
Konferenzbeitrag, Zeitschriftenaufsatz
2006Molecular beam epitaxy and doping of AlN at high growth temperatures
Boger, R.; Fiederle, M.; Kirste, L.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
2005Bonding of nitrogen in dilute InAsN and high In-content GaInAsN
Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
2005Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
Walther, M.; Schmitz, J.; Rehm, R.; Kopta, S.; Fuchs, F.; Fleißner, J.; Cabanski, W.; Ziegler, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2005MBE growth of mid-IR type-II interband laser diodes
Schmitz, J.; Mermelstein, C.; Kiefer, R.; Walther, M.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2005Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing
Pavelescu, E.-M.; Wagner, J.; Komsa, H.-P.; Rantala, T.; Dumitrescu, M.; Pessa, M.
Zeitschriftenaufsatz
2002Molekularstrahl-Epitaxie und Charakterisierung von Gruppe III-Arsenid/Nitridischen Halbleitern
Geppert, T.
Diplomarbeit
2002Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Köhler, K.; Herres, N.; Wagner, J.
Zeitschriftenaufsatz
2000Diode lasers now compete with solid-state systems
Mikulla, M.; Braunstein, J.
Zeitschriftenaufsatz
2000High-power diode laser bars >250 W
Mikulla, M.; Walther, M.; Kiefer, R.; Jandeleit, J.; Brandenburg, P.; Loosen, P.; Poprawe, R.; Weimann, G.
Konferenzbeitrag
1999Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP
Biermann, K.; Hase, A.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1998Be and Si migration in AlGaAs/GaAs heterostructures during molecular beam epitaxy
Maier, M.; Gaymann, A.
Konferenzbeitrag
1998MBE growth of metamorphic In(Ga)AlAs buffers
Sexl, M.; Böhm, G.; Maier, M.; Tränkle, G.; Weimann, G.; Abstreiter, G.
Konferenzbeitrag
1998Wachstum und Charakterisierung von InAs/GaInSb Übergittern und ihre Anwendung als Photodetektoren
Weimar, U.
Dissertation
1997Molecular beam epitaxy of Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As heterostructures on metamorphic Al(x)Ga(y)In(1-x-y)As buffer layers
Haupt, M.; Köhler, K.; Ganser, P.; Müller, S.; Rothemund, W.
Zeitschriftenaufsatz
1997Molecular beam epitaxy of vertically compact Al(x)Ga(1-x)As/GaAs laser-HEMT structures for monolithic integration
Gaymann, A.; Schaub, J.; Bronner, W.; Grün, N.; Hornung, J.; Köhler, K.
Zeitschriftenaufsatz
1996Carrier profile for In(0.35)Ga(0.65)As/GaAs multiquantum well lasers from capacitance-voltage measurements
Arias, J.; Esquivias, I.; Ralston, J.D.; Larkins, E.C.; Weisser, S.; Rosenzweig, J.; Schönfelder, A.; Maier, M.
Zeitschriftenaufsatz
1996Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP
Schramm, C.; Schlaak, W.; Mekonnen, G.G.; Passenberg, W.; Umbach, A.; Seeger, A.; Wolfram, P.; Bach, H.-G.
Zeitschriftenaufsatz
1996GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits
Schlaak, W.; Passenberg, W.; Schramm, C.; Mekonnen, G.G.; Umbach, A.; Ebert, W.; Bach, H.-G.
Konferenzbeitrag
1996Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
Haupt, M.; Ganser, P.; Köhler, K.; Emminger, S.; Müller, S.; Rothemund, W.
Konferenzbeitrag
1996Growth of high quality Al(0,48)In(0,52)As/Ga(0,47)In(0,53)As heterostructures using strain relaxed Al(x)Ga(y)In(1-x-y)As buffer layers on GaAs
Haupt, M.; Köhler, K.; Ganser, P.; Emminger, S.; Müller, S.; Rothemund, W.
Zeitschriftenaufsatz
1996High power tapered InGaAs/GaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxy
Mikulla, M.; Benz, W.; Chazan, P.; Daleiden, J.; Fleissner, J.; Kaufel, G.; Larkins, E.C.; Maier, M.; Ralston, J.D.; Rosenzweig, J.; Wetzel, A.
Konferenzbeitrag
1996Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth
Umbach, A.; Waasen, S. van; Auer, U.; Bach, H.-G.; Bertenburg, R.M.; Breuer, V.; Ebert, W.; Janssen, G.; Mekonnen, G.G.; Passenberg, W.; Schlaak, W.; Schramm, C.; Seeger, A.; Tegude, F.-J.; Unterborsch, G.
Zeitschriftenaufsatz
1996Optimierung, Herstellung und Charakterisierung von GaxIn1-xP/In0,25Ga0,75As/GaAs-Heterostruktur-Feldeffekttransistoren
Hilsenbeck, J.
Diplomarbeit
1995Atomic-scale controlled incorporation of ultrahigh-density Si doping sheets in GaAs
Däweritz, L.; Hey, R.; Ramsteiner, M.; Wagner, J.; Maier, M.; Kostial, H.; Behrend, J.; Höricke, M.
Zeitschriftenaufsatz
1995High carbon doping of Ga1-xInxAs /x about 0.01/ grown by molecular beam epitaxy
Mazuelas, A.; Maier, M.; Wagner, J.; Fischer, A.; Trampert, A.; Ploog, K.
Zeitschriftenaufsatz
1995Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy
Schmitz, J.; Wagner, J.; Fuchs, F.; Herres, N.; Koidl, P.; Ralston, J.D.
Zeitschriftenaufsatz
1994Development of advanced GaInAs/AlInAs delta-doped SQW-HEMT structures
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Hase, A.
Konferenzbeitrag
1994Device and process technologies for monolithic, high-speed, low-chirp semiconductor laser transmitters.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Bronner, W.; Hornung, J.; Köhler, K.
Konferenzbeitrag
1994Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents
Weisser, S.; Ralston, J.D.; Eisele, K.; Sah, R.E.; Hornung, J.; Larkins, E.C.; Tasker, P.J.; Benz, W.; Rosenzweig, J.; Bronner, W.; Fleissner, J.; Bender, K.
Konferenzbeitrag
1994Elimination of long-term calibration drift in molecular beam epitaxy by cooling the source flange
Larkins, E.C.; Thaden, H.; Betsche, H.; Eichin, G.; Ralston, J.D.
Zeitschriftenaufsatz
1994Improved structural and transport properties of MBE-grown InAs/AlSb QW's with residual As incorporation eliminated via valved cracker
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Hiesinger, P.; Koidl, P.; Ralston, J.D.
Konferenzbeitrag
1994Influence of MBE growth process on photovoltaic 3-5 mym intersubband photodetectors.
Larkins, E.C.; Schneider, H.; Ehret, S.; Fleissner, J.; Dischler, B.; Koidl, P.; Ralston, J.D.
Zeitschriftenaufsatz
1994Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration
Ralston, J.D.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Bender, K.; Rosenzweig, J.
Konferenzbeitrag
1994Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers
Ralston, J.D.; Weisser, S.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Rosenzweig, J.; Fleissner, J.; Bender, K.
Zeitschriftenaufsatz
1994MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Konferenzbeitrag
1994MBE growth of In0.35Ga0.65As/GaAs MQWs for high-speed lasers - relaxation limits and factors influencing dislocation glide
Larkins, E.C.; Baeumler, M.; Wagner, J.; Bender, G.; Herres, N.; Maier, M.; Rothemund, W.; Fleissner, J.; Jantz, W.; Ralston, J.D.; Flemig, G.; Brenn, R.
Konferenzbeitrag
1994Molekularstrahl-Epitaxie und Charakterisierung von GaxIn1-xAs/AlyIn1-yAs Potentialtopfstrukturen
Haupt, M.
Diplomarbeit
1994Unintentional As incorporation in molecular beam epitaxially grown InAs/AlSb/GaSb heterostructures
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Koidl, P.; Ralston, J.D.
Zeitschriftenaufsatz
1993Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Zeitschriftenaufsatz
1993Dünnschicht-Solarzellen aus Galliumarsenid
Wettling, W.
Konferenzbeitrag
1993Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlattices.
Ralston, J.D.; Larkins, E.C.; Rothemund, W.; Esquivias, I.; Weisser, S.; Rosenzweig, J.; Fleissner, J.
Zeitschriftenaufsatz
1993MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structures.
Larkins, E.C.; Rothemund, W.; Maier, M.; Wang, Z.M.; Ralston, J.D.; Jantz, W.
Zeitschriftenaufsatz
1993On the potential of delta-doping for AlInAs/GaInAs HEMTs grown by MBE
Passenberg, W.; Bach, H.-G.; Bottcher, J.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1993P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Maier, M.; Fleissner, J.
Zeitschriftenaufsatz
1993Phase analysis of interfacial carbon in GaAs grown by molecular beam epitaxy
Maier, M.; Köhler, K.
Konferenzbeitrag
1992Determination of acceptor binding energies in ZnSe.
Hingerl, K.; Jantsch, W.; Juza, P.; Lang, M.; Sitter, H.; Lilja, J.; Pessa, M.; Rothemund, W.; As, D.J.
Zeitschriftenaufsatz
1992Epitaxial growth of laterally structured lead chalcogenide lasers
Lambrecht, A.; Fach, A.; Kurbel, R.; Halford, B.; Böttner, H.; Tacke, M.
Konferenzbeitrag
1992GaAs-on-Si solar cell structures grown by MBE and LPE
Borgwarth, K.; Sulima, O.V.; Wettling, W.; Schetter, C.; Bett, A.W.
Konferenzbeitrag
1992Mushroom shaped gates in a dry etched recessed gate process
Kaufel, G.; Hülsmann, A.; Raynor, B.; Hofmann, P.; Schneider, J.; Hornung, J.; Jakobus, T.; Berroth, M.; Köhler, K.
Konferenzbeitrag
1992Novel molecular-beam epitaxially grown GaAs/AlGaAs quantum well structures for infrared detection and integrated optics at 3-5 and 8-12 mym.
Schneider, H.; Kheng, K.; Fuchs, F.; Bittner, P.; Dischler, B.; Gallagher, D.F.G.; Koidl, P.; Ralston, J.D.
Zeitschriftenaufsatz
1991Electrical and optical properties of As and Li doped ZnSe films.
Hingerl, K.; Lilja, J.; Toivonen, M.; Pessa, M.; Jantsch, W.; As, D.J.; Rothemund, W.; Juza, P.; Sitter, H.
Konferenzbeitrag
1991Grating coupled GaAs/AlGaAs waveguide structures for 10-mym detectors.
Bittner, P.; Fleissner, J.; Gallagher, D.F.G.; Ralston, J.D.
Konferenzbeitrag
1991Modulation doped inverted and normal GaAs/AlxGa1-xAs heterostructures - influence of Si-segregation on the two-dimensional electron gas.
Bachem, K.H.; Ganser, P.; Köhler, K.; Maier, M.
Zeitschriftenaufsatz
1991Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices
Kuhn, S.; Evers, J.; Böttner, H.; Herres, N.; Lambrecht, A.; Spanger, B.; Tacke, M.
Zeitschriftenaufsatz
1991Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE
Kunzel, H.; Passenberg, W.; Bottcher, J.; Heedt, C.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Quantum-Well interdiffusion for integrated photonics.
Eastman, L.F.; Dischler, B.; Ralston, J.D.
Konferenzbeitrag
1991Scanning tunneling microscopy of lead selenide monocrystals and epitaxial layers on barium fluoride.
Magonov, S.N.; Cantow, H.-J.; Böttner, H.; Meihofer, M.; Schelb, S.; Stocker, W.; Tacke, M.
Zeitschriftenaufsatz
1990Effects of Si incorporation and electrical activation of intersubband optical absorption in MBE-grown GaAs/AlGaAs multiple quantum well structures
Ralston, J.D.; Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ramsteiner, M.; Ennen, H.
Konferenzbeitrag
1990Elektrische und optische Eigenschaften von ErAs und ErAs/GaAs Vielfachschichten hergestellt mit MBE auf GaAs
Ralston, J.D.; Fuchs, F.; Hiesinger, P.; Schneider, J.; Herres, N.; Ennen, H.; Wennekers, P.
Konferenzbeitrag
1990Optimization of extremely highly p-doped In0.53Ga0.47As:Be contact layers grown by MBE
Passenberg, W.; Harde, P.; Kunzel, H.; Trommer, D.
Konferenzbeitrag
1990Structural, electrical and optical characterization of single-crystal ErAs layers grown on GaAs by MBE.
Ralston, J.D.; Hiesinger, P.; Schneider, J.; Müller, H.D.; Rothemund, W.; Fuchs, F.; Schmälzlin, J.; Thonke, K.; Herres, N.; Ennen, H.; Wennekers, P.
Zeitschriftenaufsatz
1989Heteroepitaxial Pb1-xSnxSe on Si infrared sensor array with 12 mym cutoff wavelength.
Zogg, H.; Maissen, C.; Masek, J.; Blunier, S.; Lambrecht, A.; Tacke, M.
Zeitschriftenaufsatz
1989Strained-layer InGaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy.
Offsey, S.D.; Schaff, W.J.; Tasker, P.J.; Eastman, L.F.; Ennen, H.
Zeitschriftenaufsatz
1987Development of IR photovoltaic detectors using molecular beam epitaxy of IV-VI compounds.
Kuhn, S.; Lambrecht, A.; Tacke, M.; Halford, B.
Konferenzbeitrag
1987MBE of Pb(1-x) Eu(x) Se for the use in IR devices
Norton, P.; Tacke, M.
Zeitschriftenaufsatz
1987On the performance of selenium rich lead-salt heterostructure lasers with remote p-n junction.
Rosman, R.; Norton, P.; Bachem, K.H.; Katzir, A.; Preier, H.M.
Zeitschriftenaufsatz
1986Pb1-XEuXSe for IR device applications
Norton, P.; Bachem, K.H.; Tacke, M.
Konferenzbeitrag