Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2002MOVPE-based in-situ etching of InP epitaxial heterostructures
Wolfram, P.; Franke, D.; Ebert, W.; Grote, N.
Konferenzbeitrag
2001Fabrication of InGaAsP/InP ridge waveguide lasers with dry etched facets using chemically assisted ion beam etching and a simple photoresist mask
Paraskevopoulos, A.; Hensel, H.-J.; Molzow, W.-D.; Janiak, K.; Suryaputra, E.; Roehle, H.; Wolfram, P.; Ebert, W.
Konferenzbeitrag
2001Ultrafast all-optical demultiplexing performance of monolithically integrated band gap shifted Mach-Zehnder interferometer
Tekin, T.; Schlak, M.; Brinker, W.; Berger, J.; Schubert, C.; Maul, B.; Molt, R.
Konferenzbeitrag
2000"On-wafer" surface implanted high power, picosecond pulse InGaAs/InP ( lambda -1.53-1.55 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Konferenzbeitrag
2000Detailed experimental study of high-frequency self-pulsation domains in multi-section DFB-lasers
Hoffmann, D.; Brox, O.; Sahin, G.; Möhrle, M.; Sartorius, B.
Konferenzbeitrag
2000High-power, picosecond pulse generation from surface implanted InGaAsP/InP ( lambda =1.53 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Konferenzbeitrag
2000Integratable high-power small-linewidth lambda /4 phase-shifted 1.55 mu m InGaAsP-InP-ridge-waveguide DFB-lasers
Mohrle, M.; Sigmund, A.; Kreissl, J.; Reier, F.; Steingrüber, R.; Rehbein, W.; Roehle, H.
Konferenzbeitrag
2000MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride
Wolfram, P.; Ebert, W.; Kreissl, J.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
1997Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere
Roehle, H.; Schroeter-Janssen, H.; Kaiser, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1997LP-MOVPE growth of laser structures using nitrogen carrier gas
Roehle, H.; Schroeter-Janssen, H.
Konferenzbeitrag
1996Design of fiber-matched uncladded rib waveguides on InP with polarization-independent mode matching loss of 1 dB
Weinert, C.M.
Zeitschriftenaufsatz
1996Design of fibre matched uncladded rib waveguides on InP with polarization independent fibre coupling loss of 1 dB
Weinert, C.M.
Konferenzbeitrag
1996Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures
Reier, F.W.; Bornholdt, C.; Hoffmann, D.; Kappe, F.; Mörl, L.
Konferenzbeitrag
1996LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas
Roehle, H.; Schroeter-Janssen, H.
Konferenzbeitrag
1996Polarization independent integrated mode transformer for uncladded InGaAsP/InP rib waveguides without epitaxial regrowth
Albrecht, P.; Heidrich, H.; Löffler, R.; Mörl, L.; Reier, F.; Weinert, C.M.
Konferenzbeitrag
1996Uncladded InGaAsP/InP rib waveguides with integrated thickness tapers for efficient fibre-chip butt coupling
Mörl, L.; Weinert, C.M.; Reier, F.; Stoll, L.; Nolting, H.-P.
Zeitschriftenaufsatz
1995Controllable self-pulsations in multi-section DFB lasers with an integrated phase-tuning section
Sartorius, B.; Möhrle, M.; Reichenbacher, S.; Ebert, W.
Zeitschriftenaufsatz
1995Fast 2*2 Mach-Zehnder optical space switches using InGaAsP-InP multiquantum-well structures
Agrawal, N.; Weinert, C.M.; Ehrke, H.-J.; Mekonnen, G.G.; Franke, D.; Bornholdt, C.; Langenhorst, R.
Zeitschriftenaufsatz
1995Uncladded thickness tapers integrated with InGaAsP/InP rib waveguides for efficient fibre-chip butt coupling
Morl, L.; Weinert, C.M.; Reier, F.; Stoll, L.; Nolting, H.-P.
Konferenzbeitrag
19942*2 optical space switches using InGaAsP/InP MQW structures for 10-GHz applications
Agrawal, N.; Franke, D.; Weinert, C.M.; Bornholdt, C.
Konferenzbeitrag
1994Self-consistent calculation of quantum well electron transfer structures for ultrafast optical switches
Weinert, C.M.; Agrawal, N.
Konferenzbeitrag
1993Clock recovery based on a new type of selfpulsation in a 1.5 mu m two-section InGaAsP-InP DFB laser
As, D.J.; Eggemann, R.; Feiste, U.; Möhrle, M.; Patzak, E.; Weich, K.
Zeitschriftenaufsatz
1993Optimization of the optical switching characteristics of two-section Fabry-Perot lasers
Hörer, J.; Weich, K.; Möhrle, M.; Sartorius, B.
Zeitschriftenaufsatz
1993Vectorial simulation of passive TE/TM mode converter devices on InP
Weinert, C.M.; Heidrich, H.
Zeitschriftenaufsatz
1992Electro-optic modulation by electron transfer in multiple InGaAsP/InP barrier, reservoir, and quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.
Zeitschriftenaufsatz
1992Gigahertz self-pulsation in 1.5 mu m wavelength multisection DFB lasers
Möhrle, M.; Feister, U.; Hörer, J.; Molt, R.; Sartorius, B.
Zeitschriftenaufsatz
1991The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layers
Sartorius, B.; Reier, F.; Wolfram, P.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.; Clemens, U.; Witt, A.; Wegener, M.
Konferenzbeitrag
1991LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (lambda g < 1.2 mu m) for optical waveguide applications
Reier, F.W.; Harde, P.; Kaiser, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Optimization and calibration of two-wavelength transmission for absolute thickness measurements of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.
Konferenzbeitrag
1991Theoretical investigation of a meander coupler as fast tunable, narrowband multiplexer/demultiplexer for optical ATM-system application
Nolting, H.-P.
Konferenzbeitrag
1991Two-wavelength transmission: A rapid and precise method for measuring the light absorption in semiconductors
Sartorius, B.; Brandstattner, M.; Venghaus, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1990In situ etching depth monitoring for reactive ion etching of InGaAs(P)/InP heterostructures by ellipsometry
Muller, R.
Zeitschriftenaufsatz
1990TE/TM mode splitters on InGaAsP/InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.; Weinert, C.M.
Zeitschriftenaufsatz
1989Endpoint detection for CH4/H2 reactive ion etching of InGaAsP heterostructures by mass spectrometry
Schmid, H.; Fidorra, F.; Grutzmacher, D.
Konferenzbeitrag
1989Implanted-collector InGaAsP/InP heterojunction bipolar transistor
Su, L.M.; Grote, N.; Schumacher, P.; Franke, D.
Konferenzbeitrag
1989InP based integrated laser driver circuit
Paraskevopoulos, A.; Bach, H.G.; Mekonnen, G.; Schroeter-Janssen, H.; Fiedler, F.; Grote, N.
Konferenzbeitrag
1988Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs
Bach, H.G.; Fiedler, F.; Grote, N.; Bouadma, N.B.; Rose, B.; Devoldere, P.; Tegude, F.J.; Speier, P.; Wunstel, K.
Konferenzbeitrag
1988Waveguide-mirror components InGaAsP/InP
Albrecht, P.; Döldissen, W.; Niggebrügge, U.; Nolting, H.-P.; Schmid, H.
Konferenzbeitrag
1987Current-injection analysis of invertible InGaAsP/InP double-heterostructure bipolar transistors
Bach, H.G.; Grote, N.; Fiedler, F.
Konferenzbeitrag
1987Luminescence microscopy for quality control of material and processing
Satorius, B.; Franke, D.; Schlak, M.
Konferenzbeitrag, Zeitschriftenaufsatz
1987Self-aligned waveguide mirrors for optical integration on InGaAsP/InP
Albrecht, P.; Doldissen, W.; Niggerbrugge, U.; Nolting, H.P.; Schmid, H.
Konferenzbeitrag
1986Monolithic IO-technology-modulators and switches based on InP
Schlachetzki, A.
Konferenzbeitrag
1986Wavelength selective infrared microscopy: A nondestructive and quick method for the investigation of buried structures in optoelectronic devices
Sartorius, B.; Rosenzweig, M.
Zeitschriftenaufsatz