Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1991Anisotropic electron mobilities of Al0.3Ga0.7As/InxGa1-xAs/GaAs high electron mobility transistor structures.
Schweizer, T.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Materials and device properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors -0 smaller than x smaller than 0.5.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors - 0 is smaller than x smaller than 0.5.
Schweizer, T.; Ganser, P.; Hülsmann, A.; Tasker, P.; Köhler, K.
Konferenzbeitrag
1990Materials and device characteristics of single and double sided delta-doped pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Konferenzbeitrag