Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements
Weisse, Julietta; Hauck, Martin; Sledziewski, Tomasz; Krieger, Michael; Bauer, Anton J.; Mitlehner, Heinz; Frey, Lothar; Erlbacher, Tobias
Konferenzbeitrag
2018Analysis of compensation effects in aluminum-implanted 4H-SiC devices
Weisse, J.; Hauck, M.; Sledziewski, T.; Tschiesche, M.; Krieger, M.; Bauer, A.; Mitlehner, H.; Frey, L.; Erlbacher, T.
Konferenzbeitrag
2015Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
Uhnevionak, Viktroyia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter
Zeitschriftenaufsatz
2015Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent
Zeitschriftenaufsatz
2012Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.
Poster
2006Conduction model of SnO2 thin films based on conductance and Hall effect measurements
Oprea, A.; Moretton, E.; Barsan, N.; Becker, W.J.; Wöllenstein, J.; Weimar, U.
Zeitschriftenaufsatz
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1996Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
Haupt, M.; Ganser, P.; Köhler, K.; Emminger, S.; Müller, S.; Rothemund, W.
Konferenzbeitrag
1996Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W.
Konferenzbeitrag
1991MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers
Passenberg, W.; Bach, H.G.; Bottcher, J.
Konferenzbeitrag