Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Integrated current sensing in GaN power ICs
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2017A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells
Thome, Fabian; Ambacher, Oliver
Konferenzbeitrag
2016A GaN-based 10.1MHz class-F-1 300 W continuous wave amplifier targeting industrial power applications
Maier, F.; Krausse, D.; Gruner, D.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016An investigation of millimeter wave switches based on shunt transistors including SPDT switch MMICs up to 300 GHz
Thome, F.; Ohlrogge, M.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2016Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
Mönch, S.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016A W-band wireless communication transmitter utilizing a stacked-FET oscillator for high output power performance
Thome, F.; Ambacher, O.
Konferenzbeitrag
2015Integrated reverse-diodes for GaN-HEMT structures
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2015Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015Novel destructive-interference-envelope detector for high data rate ASK demodulation in wireless communication receivers
Thome, F.; Maroldt, S.; Ambacher, O.
Konferenzbeitrag
2015Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2014Low noise amplifier MMICs for 325 GHz radiometric applications
Diebold, S.; Kühn, J.; Hülsmann, A.; Leuther, A.; Dahlberg, K.; Jukkala, P.; Kantanen, M.; Kallfass, I.; Zwick, T.; Närhi, T.
Konferenzbeitrag
2014A low-power W-band receiver MMIC for amplitude modulated wireless communication up to 24 Gbit/s
Thome, F.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2014Low-power wireless data transmitter MMIC with data rates up to 25 Gbit/s and 9.5mW power consumption using a 113 GHz carrier
Thome, F.; Leuther, A.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2014Planar zero bias Schottky diodes on an InGaAs metamorphic HEMT MMIC process
Thome, F.; Leuther, A.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Zeitschriftenaufsatz
2014Watt-level non-uniform distributed 6-37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology
Dennler, P.; Quay, R.; Brueckner, P.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2013AlGaN/GaN-based variable gain amplifiers for W-band operation
Diebold, S.; Müller, D.; Schwantuschke, D.; Wagner, S.; Quay, R.; Zwick, T.; Kallfass, I.
Konferenzbeitrag
2013A broadband amplifier MMIC with 105 to 140 GHz bandwidth
Diebold, S.; Pahl, P.; Wagner, S.; Massler, H.; Tessmann, A.; Leuther, A.; Zwick, T.; Kallfass, I.
Konferenzbeitrag
2013Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50 nm InGaAs mHEMT technology
Thome, F.; Massler, H.; Wagner, S.; Leuther, A.; Kallfass, I.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2013Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology
Dennler, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
20128-42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
Dennler, P.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2012High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10(5) hours
Waltereit, P.; Kühn, J.; Quay, R.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Lätti, J.; Rostewitz, M.; Hirche, K.; Däubler, J.
Konferenzbeitrag
2012Physics-based modeling of GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S.
Zeitschriftenaufsatz
2011Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications
Dennler, P.; Raay, F. van; Seelmann-Eggebert, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
199850 Gbit/s InP-based photoreceiver OEIC with gain flattened transfer characteristics
Bach, H.G.; Schlaak, W.; Mekonnen, G.G.; Steingrüber, R.; Seeger, A.; Engel, T.; Passenberg, W.; Umbach, A.; Schramm, C.; Unterborsch, G.
Konferenzbeitrag
1998Millimeter wave InP HEMT MMIC technology. Thermal stability and performace
Chertouk, M.; Steinhagen, F.; Massler, H.; Dammann, M.; Haydl, W.H.; Köhler, K.; Weimann, G.
Konferenzbeitrag
1994Optical response of a pseudomorphic HFET photodetector up to 10 GHz. TH1D-6
Bangert, A.; Rosenzweig, J.; Ludwig, M.; Bronner, W.; Hofmann, P.; Köhler, K.
Konferenzbeitrag
1994Voltage dependence of the optical response of a pseudomorphic HFET-photodetector
Bangert, A.; Rosenzweig, J.; Bosch, R.; Bronner, W.; Köhler, K.; Raynor, B.
Konferenzbeitrag
1993On the potential of delta-doping for AlInAs/GaInAs HEMTs grown by MBE
Passenberg, W.; Bach, H.-G.; Bottcher, J.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1990Extreme low power 1 to 4 demultiplexer using double delta doped Quantum Well GaAs/AlGaAs transistors.
Nowotny, U.; Hurm, V.; Lang, M.; Kaufel, U.; Hülsmann, A.; Scheider, J.; Jakobus, T.; Bachem, K.H.; Berroth, M.; Hoffmann, C.; Köhler, K.
Konferenzbeitrag