Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector with Integrated Broadband Bow-Tie Antenna
Bauer, Maris; Rämer, Adam; Chevtchenko, Serguei A.; Osipov, Konstantin; Cibiraite, Dovile; Pralgauskaite, Sandra; Ikamas, Kestutis; Lisauskas, Alvydas; Heinrich, Wolfgang; Krozer, Viktor; Roskos, Hartmut G.
Zeitschriftenaufsatz
2018High-power asymmetrical three-way GaN doherty power amplifier at C-band frequencies
Derguti, Edon; Ture, Erdin; Krause, Sebastian; Schwantuschke, Dirk; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Zeitschriftenaufsatz
2015A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA
Carrubba, V.; Ture, E.; Maroldt, S.; Mußer, M.; Raay, F. van; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015Switching frequency modulation for GaN-based power converters
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2009GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Müller, S.; Musser, M.; Kühn, J.; Raay, F. van; Seelmann-Eggebert, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K.
Zeitschriftenaufsatz
2008Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T.
Konferenzbeitrag
2008GaN MMIC based T/R-module front-end for X-band applications
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M.
Konferenzbeitrag
2007A systematic state-space approach to large-signal transistor modeling
Seelmann-Eggebert, M.; Merkle, T.; Raay, F. van; Quay, R.; Schlechtweg, M.
Zeitschriftenaufsatz
2006Advanced high power amplifier chain for X-band T/R-modules based on GaN MMICs
Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Mikulla, M.; Weimann, G.
Konferenzbeitrag