Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Zeitschriftenaufsatz
2018Dynamic load modulated low-voltage GaN PA using novel low-loss GaN varactors
Amirpour, Raul; Krause, Sebastian; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Investigations of active antenna doherty power amplifier modules under beam-steering mismatch
Gashi, Bersant; Krause, Sebastian; Quay, Rüdiger; Fager, Christian; Ambacher, Oliver
Zeitschriftenaufsatz
2017Atomic layer etching of gallium nitride (0001)
Kauppinen, Christoffer; Khan, Sabbir Ahmed; Sundqvist, Jonas; Suyatin, Dmitry B.; Suihkonen, Sami; Kauppinen, Esko I.; Sopanen, Markku
Zeitschriftenaufsatz
2017Enhancement of the broadband efficiency of a class-j power amplifier with varactor-based dynamic load modulation
Amirpour, Raul; Darraji, Ramzi; Ghannouchi, Fadhel; Quay, Rüdiger
Zeitschriftenaufsatz
2017Materials response to glancing incidence femtosecond laser ablation
Echlin, M.P.; Titus, M.S.; Straw, M.; Gumbsch, P.; Pollock, T.M.
Zeitschriftenaufsatz
2017Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan
Konferenzbeitrag
2016Analysis and modeling of GaN-based multi field plate Schottky power diodes
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016High temperature GaN gate driver in SOI CMOS technology
Kappert, Holger; Braun, Sebastian; Kordas, Norbert; Dreiner, Stefan; Kokozinski, Rainer
Zeitschriftenaufsatz, Konferenzbeitrag
2016Insights into interfacial changes and photoelectrochemical stability of InxGa1-xN (0001) photoanode surfaces in liquid environments
Caccamo, L.; Cocco, G.; Martin, G.; Zhou, H.; Fundling, S.; Gad, A.; Mohajerani, M.S.; Abdelfatah, M.; Estrade, S.; Peiro, F.; Dziony, W.; Bremers, H.; Hangleiter, A.; Mayrhofer, L.; Lilienkamp, G.; Moseler, M.; Daum, W.; Waag, A.
Zeitschriftenaufsatz
2016Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Poly-silicon CMOS compatible gate module for AlGaN/GaN-on-silicon MIS-HEMTs for power electronics applications
Jauss, S.A.; Schwaiger, S.; Daves, W.; Ambacher, O.
Konferenzbeitrag
2016Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
Jauss, S.A.; Kilian, S.; Schwaiger, S.; Noll, S.; Daves, W.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2015Assembly and packaging technologies for high-temperature and high-power GaN devices
Bajwa, A.A.; Qin, Yangyang; Reiner, R.; Quay, R.; Wilde, J.
Zeitschriftenaufsatz
2015Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress
Jauss, S.A.; Schwaiger, S.; Daves, W.; Noll, S.; Ambacher, O.
Konferenzbeitrag
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Zeitschriftenaufsatz
2015Implementation and investigation of mode locking in GaN-based laser diodes in external cavity configuration
Weig, T.; Höck, H.; Holc, Katarzyna; Köhler, Klaus; Wagner, Joachim; Schwarz, U.T.
Zeitschriftenaufsatz
2014Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes
Weig, T.; Lükens, G.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Konferenzbeitrag
2014Excitons and exciton-phonon coupling in the optical response of GaN
Shokhovets, S.; Bärwolf, F.; Gobsch, G.; Runge, K.; Köhler, K.; Ambacher, O.
Konferenzbeitrag, Zeitschriftenaufsatz
2014Influence of surface roughness on the optical mode profile of GaN-based violet ridge waveguide laser diodes
Holc, K.; Jakob, A.; Weig, T.; Köhler, K.; Ambacher, O.; Schwarz, U.T.
Konferenzbeitrag
2014Influence of surface roughness on the optical mode profile of GaN-based violet ridge waveguide laser diodes
Holc, K.; Jakob, A.; Weig, T.; Köhler, K.; Ambacher, O.; Schwarz, U.T.
Konferenzbeitrag
2014Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side
Passow, T.; Kunzer, M.; Börner, P.; Pletschen, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2014Manga: Manufacturable GaN SiC substates and GaN Epi-Wafer supply chain
Mikulla, M.; Stockmeier, M.; Magnussen, B.; Poisson, M.-A.; Zanoni, E.; Kuball, M.
Konferenzbeitrag
2014Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain
Mikulla, M.; Storm, S.; Henelius, N.; Poisson, M.-A.; Zanoni, E.; Kuball, M.
Konferenzbeitrag
2014A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2014A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage
Waltereit, P.; Leuther, A.; Rüster, J.; Czap, H.; Preschle, M.; Iannucci, R.; Müller, S.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2014Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
Santi, C. de; Meneghini, M.; Marioli, M.; Buffolo, M.; Trivellin, N.; Weig, T.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U.T.; Meneghesso, G.; Zanoni, E.
Zeitschriftenaufsatz, Konferenzbeitrag
2013AlGaN/GaN-based variable gain amplifiers for W-band operation
Diebold, S.; Müller, D.; Schwantuschke, D.; Wagner, S.; Quay, R.; Zwick, T.; Kallfass, I.
Konferenzbeitrag
2013Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm
Moudakir, T.; Genty, F.; Kunzer, M.; Börner, P.; Passow, T.; Suresh, S.; Patriarche, G.; Köhler, K.; Pletschen, W.; Wagner, J.; Ougazzaden, A.
Zeitschriftenaufsatz
2013Development of an epitaxial growth process on European SiC substrates for a low leakage GaN HEMT technology with power added efficiencies around 65%
Waltereit, P.; Müller, S.; Kirste, L.; Prescher, M.; Storm, S.; Weber, A.; Schauwecker, B.; Hosch, M.; Splettstößer, J.
Konferenzbeitrag
2013GaN-based high voltage transistors for efficient power switching
Waltereit, P.; Reiner, R.; Czap, H.; Peschel, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2013High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF
Mikulla, M.; Leuther, A.; Brueckner, P.; Schwantuschke, D.; Tessmann, A.; Schlechtweg, M.; Ambacher, O.; Caris, M.
Konferenzbeitrag
2013A package-integrated 50W high-efficiency RF CMOS-GaN class-E power amplifier
Heijden, M.P. van der; Acar, M.; Maroldt, S.
Konferenzbeitrag
2013Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes
Weig, T.; Schwarz, U.T.; Sulmoni, L.; Lamy, J.-M.; Carlin, J.-F.; Grandjean, N.; Boiko, D.L.
Konferenzbeitrag
2013QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz
Maroldt, S.; Aja, B.; Raay, F. van; Krause, S.; Brueckner, P.; Quay, R.
Konferenzbeitrag
2013Statistical harmonic load termination analysis of switch-mode power amplifiers employing bandpass-pulse-length modulation
Krause, S.; Maroldt, S.; Zech, C.; Quay, R.; Hein, M.
Konferenzbeitrag
2012(Al, In)GaN laser diodes with optimized ridge structures
Holc, K.; Köhler, K.; Pletschen, W.; Wagner, J.; Schwarz, U.T.
Konferenzbeitrag
2012Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2012Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2012GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2012Line beam processing for laser lift-off of GaN from sapphire
Delmdahl, R.; Pätzel, R.; Brune, J.; Senczuk, R.; Goßler, C.; Moser, R.; Kunzer, M.; Schwarz, U.T.
Zeitschriftenaufsatz
2012Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well
Danhof, J.; Schwarz, S.U.; Meyer, T.; Vierheilig, C.; Peter, M.
Zeitschriftenaufsatz
2012Trade-offs between performance and reliability in AlGaN/GaN transistors
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
Heck, S.; Maroldt, S.; Bräckle, A.; Berroth, M.; Quay, R.
Konferenzbeitrag
2011Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Dynamics of GaN-based laser diodes from violet to green
Scheibenzuber, W.; Hornuss, C.; Schwarz, U.T.
Konferenzbeitrag
2011From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2011InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
Schuh, P.; Sledzik, H.; Oppermann, M.; Quay, R.; Kühn, J.; Lim, T.; Waltereit, P.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2011Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications
Brueckner, K.; Niebelschütz, F.; Tonisch, K.; Foerster, C.; Cimalla, V.; Stephan, R.; Pezoldt, J.; Stauden, T.; Ambacher, O.; Hein, M.A.
Zeitschriftenaufsatz
2011Polarization switching of the optical gain in semipolar InGaN quantum wells
Scheibenzuber, W.; Schwarz, U.T.
Zeitschriftenaufsatz
2011Quaternary barriers for improved performance of GaN-based HEMTs
Lim, T.; Aidam, R.; Waltereit, P.; Pletschen, W.; Quay, R.; Kirste, L.; Ambacher, O.
Zeitschriftenaufsatz
2011Recent results of blue and green InGaN laser diodes for laser projection
Lutgen, S.; Dini, D.; Pietzonka, I.; Tautz, S.; Breidenassel, A.; Lell, A.; Avramescu, A.; Eichler, C.; Lermer, T.; Müller, J.; Bruederl, G.; Gomez-Iglesias, A.; Strauss, U.; Scheibenzuber, W.G.; Schwarz, U.T.; Pasenow, B.; Koch, S.
Konferenzbeitrag
2010AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2010Angle-resolved photoelectron spectroscopy study of the GaN(0001)-2×2 surface
Lorenz, P.; Gutt, R.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes
Scheibenzuber, W.; Schwarz, U.T.; Sulmoni, L.; Carlin, J.F.; Castiglia, A.; Grandjean, N.
Zeitschriftenaufsatz
2010High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2010Kampf der Giganten
Hüning, F.; Ambacher, O.; Guerra, A.
Zeitschriftenaufsatz
2009Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices
Himmerlich, M.; Koufaki, M.; Ecke, G.; Mauder, C.; Cimalla, V.; Schaefer, J.A.; Kondilis, A.; Pelekanos, N.T.; Modreanu, M.; Krischok, S.; Aperathitis, E.
Zeitschriftenaufsatz
2009Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
Maroldt, S.; Haupt, C.; Pletschen, W.; Müller, S.; Quay, R.; Ambacher, O.; Schippel, C.; Schwierz, F.
Zeitschriftenaufsatz
2009High efficiency digital GaN MMIC power amplifiers for future switch-mode based mobile communication systems
Maroldt, S.; Haupt, C.; Kiefer, R.; Bronner, W.; Müller, S.; Benz, W.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2009Observation of Fermi-edge and excitons and exciton-phonon complexes in the optical response of heavily doped n-type wurtzite GaN
Shokhovets, S.; Köhler, K.; Ambacher, O.; Gobsch, G.
Zeitschriftenaufsatz
2009Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An X-ray diffraction study
Bläsing, J.; Krost, A.; Hertkorn, J.; Scholz, F.; Kirste, L.; Chuvilin, A.; Kaiser, U.
Zeitschriftenaufsatz
2009Wide band gap based MEMS for harsh environment applications
Cimalla, V.; Lebedev, V.; Röhlig, C.-C.; Ambacher, O.; Niebelschütz, F.; Tonisch, K.; Pezoldt, J.; Brueckner, K.; Hein, M.
Konferenzbeitrag
2008Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas
Buchheim, C.; Goldhahn, R.; Gobsch, G.; Tonisch, K.; Cimalla, V.; Niebelschütz, F.; Ambacher, O.
Zeitschriftenaufsatz
2008High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Raynor, B.; Mikulla, M.; Weimann, G.
Zeitschriftenaufsatz
2008III-V and III-Nitride engineered heterostructures: Wafer bonding, ion slicing and more
Moutanabbir, O.; Christiansen, S.; Senz, S.; Scholz, R.; Petzold, M.; Gösele, U.
Konferenzbeitrag
2008Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
Tonisch, K.; Buchheim, C.; Niebelschütz, F.; Schober, A.; Gobsch, G.; Cimalla, V.; Ambacher, O.; Goldhahn, R.
Zeitschriftenaufsatz
2008Sapphire-GaN-based planar integrated free-space optical system
Hofmann, M.; Hauguth-Frank, S.; Lebedev, V.; Ambacher, O.; Sinzinger, S.
Zeitschriftenaufsatz
2008SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
Kirste, L.; Köhler, K.; Maier, M.; Kunzer, M.; Maier, M.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2008Systematical study of InAIN/GaN devices by numerical simulation
Vitanov, S.; Palankovski, V.; Pozzovivo, G.; Kuzmik, J.; Quay, R.
Konferenzbeitrag
2008Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
Brueckner, K.; Niebelschütz, F.; Tonisch, K.; Michael, S.; Dadgar, A.; Krost, A.; Cimalla, V.; Ambacher, O.; Stephan, R.; Hein, M.A.
Zeitschriftenaufsatz
2008A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Walcher, H.; Raay, F. van; Kappeler, O.; Mikulla, M. et al.
Konferenzbeitrag
2007GaN HEMT: Trends in civil and military circuit applications
Quay, R.; Raay, F. van; Tessmann, A.; Kiefer, R.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Konferenzbeitrag
2007Hydrodynamic modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Konferenzbeitrag
2007Measurement of the internal quantum efficiency of InGaN quantum wells
Laubsch, A.; Sabathil, M.; Bruederl, G.; Wagner, J.; Strassburg, M.; Baur, E.; Braun, H.; Schwarz, U.T.; Lell, A.; Lutgen, S.; Linder, N.; Oberschmid, R.; Hahn, B.
Konferenzbeitrag
2007Modeling of Electron Transport in GaN-based Materials and Devices
Vitanov, S.; Palankovski, V.; Quay, R.; Langer, E.
Konferenzbeitrag
2007Predictive simulation of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Konferenzbeitrag
2006Design and W-CDMA characterization of a wideband AlGaN/GaN HEMT power amplifier for future 3G multiband base station applications
Wiegner, D.; Seyfried, U.; Templ, W.; Naß, T.; Weber, S.; Wörner, S.; Dettmann, I.; Quay, R.; Raay, F. van; Walcher, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R.
Konferenzbeitrag
2006Field-plate optimization of AlGaN/GaN HEMTs
Palankovski, V.; Vitanov, S.; Quay, R.
Konferenzbeitrag
2006GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
Quay, R.; Kiefer, R.; Raay, F. van; Reiner, R.; Kappeler, O.; Müller, S.; Dammann, M.; Bronner, W.; Mikulla, M.; Schlechtweg, M.; Wiegner, D.; Seyfried, U.; Templ, W.; Weimann, G.
Zeitschriftenaufsatz
2006Linear broadband GaN MMICs for Ku-band applications
Schuh, P.; Leberer, R.; Sledzik, H.; Schmidt, D.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Bronner, W.
Konferenzbeitrag
2006Load pull characterization of GaN/AlGaN HEMTs
Schuberth, C.; Arthaber, H.; Mayer, M.; Magerl, G.; Quay, R.; Raay, F. van
Konferenzbeitrag
2006Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Konferenzbeitrag, Zeitschriftenaufsatz
2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Zeitschriftenaufsatz, Konferenzbeitrag
2005An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power
Kappeler, O.; Quay, R.; Raay, F. van; Kiefer, R.; Reiner, R.; Walcher, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Konferenzbeitrag
2005GaN/AlGaN HEMTs for highly linear communication applications in L-frequency band
Quay, R.; Würfl, J.; Wiegner, D.; Fischer, G.; Schubert, C.; Magerl, G.
Konferenzbeitrag
2005Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L.
Zeitschriftenaufsatz
2005High power/high bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Müller, S.; Walcher, H.; Seelmann-Eggebert, M.; Kappeler, O.; Schlechtweg, M.; Weimann, G.
Konferenzbeitrag
2005High-density ECR-plasma deposited silicon nitride films for applications in III/V-based compound semiconductor devices
Sah, R.E.; Mikulla, M.; Baumann, H.; Benkhelifa, F.; Quay, R.; Weimann, G.
Konferenzbeitrag
2005Investigation into efficiency enhancements in wide bandgap semiconductor circuits
Krausse, D.
Master Thesis
2005Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Müller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.
Konferenzbeitrag
2005Kurzwellige Diodenlaser auf der Basis der Gruppe III-Nitride
Sommer, F.
Dissertation
2005Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
Wiegner, D.; Merk, T.; Seyfried, U.; Templ, W.; Merk, S.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R.
Konferenzbeitrag
2005Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films
Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G.
Konferenzbeitrag
2005Performance and fabrication of GaN/AlGaN power MMIC at 10 GHz
Benkhelifa, F.; Kiefer, R.; Müller, S.; Raay, F. van; Quay, R.; Sah, R.E.; Dammann, M.; Mikulla, M.; Weimann, G.
Konferenzbeitrag
2005Violet-emitting diode lasers on low defect density GaN templates
Sommer, F.; Vollrath, F.; Kunzer, M.; Pletschen, W.; Müller, S.; Köhler, K.; Schlotter, P.; Wagner, J.; Weimar, A.; Haerle, V.
Zeitschriftenaufsatz
2004Frontiers of III-V compounds and devices
Würfl, J.; Schlechtweg, M.
Konferenzbeitrag
2004Growth of GaN crystals and epilayers from solutions at ambient pressure
Meissner, E.; Sun, G.; Hussy, S.; Birkmann, B.; Friedrich, J.; Müller, G.
Konferenzbeitrag
2004III-N based short-wavelength LEDs, LUCO-LEDs and lasers
Sommer, F.; Stephan, T.; Vollrath, F.; Köhler, K.; Kunzer, M.; Müller, S.; Schlotter, P.; Pletschen, W.; Kaufmann, U.; Wagner, J.
Zeitschriftenaufsatz
2003AlGaN/GaN HEMTs on SiC for high power broadband applications up to 40 GHz
Quay, R.; Weimann, G.
Zeitschriftenaufsatz
2003Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
Kiefer, R.; Quay, R.; Müller, S.; Feltgen, T.; Raynor, B.; Schleife, J.; Köhler, K.; Massler, H.; Ramberger, S.; Raay, F. van; Tessmann, A.; Mikulla, M.; Weimann, G.
Zeitschriftenaufsatz
2003Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures
Müller, S.; Quay, R.; Sommer, F.; Vollrath, F.; Kiefer, R.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2003Thick GaN layers grown by hydride vapor-phase epitaxy: Hetero- versus homo-epitaxy
Hageman, P.R.; Kirilyuk, V.; Corbeek, W.H.M.; Weyher, J.L.; Lucznik, B.; Bockowski, M.; Porowski, S.; Müller, S.
Zeitschriftenaufsatz
2003Violet and blue laser diodes make strides
Haerle, V.; Lell, A.; Wagner, J.
Zeitschriftenaufsatz
2002AlGaN/GaN HEMTs on SiC operating at 40 GHz
Quay, R.; Kiefer, R.; Raay, F. van; Massler, H.; Ramberger, S.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Konferenzbeitrag
2002AlGaN/GaN-HEMTs for power applications up to 40 GHz
Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G.
Konferenzbeitrag
2002Feasibility of AlGaN/GaN HEMTs for Ku- and Ka-Band applications
Kiefer, R.; Quay, R.
Konferenzbeitrag
2002Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
Lossy, R.; Chaturvedi, N.; Würfl, J.; Müller, S.; Köhler, K.
Zeitschriftenaufsatz
2001Heat-spreading diamond films for GaN-based high-power transistor devices
Seelmann-Eggebert, M.; Meisen, P.; Schaudel, F.; Kiodl, P.; Vescan, A.; Leier, H.
Zeitschriftenaufsatz
1999Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
Yoshikawa, M.; Kunzer, M.; Wagner, J.; Obloh, H.; Schlotter, P.; Schmidt, R.; Herres, N.; Kaufmann, U.
Zeitschriftenaufsatz
1999Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs (LUCOLEDs)
Schlotter, P.; Baur, J.; Hielscher, C.; Kunzer, M.; Obloh, H.; Schmidt, R.; Schneider, J.
Zeitschriftenaufsatz
1999Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
Kaufmann, U.; Kunzer, M.; Obloh, H.; Maier, M.; Manz, C.; Ramakrishnan, A.; Santic, B.
Zeitschriftenaufsatz
1998Nature of the 2.8 eV photoluminescence band in Mg doped GaN
Kaufmann, U.; Kunzer, M.; Maier, M.; Obloh, H.; Ramakrishnan, A.; Santic, B.; Schlotter, P.
Zeitschriftenaufsatz
1998Optische Spektroskopie an Halbleitern mit großem Bandabstand
Behr, D.
Dissertation
1998Optische Spektroskopie und Magnetische Ressonanz an Materialkomponenten von Lumineszenzkonversions-Leuchtdioden
Baur, J.
Dissertation
1998White light emitting diodes
Baur, J.; Schlotter, P.; Schneider, J.
Konferenzbeitrag
1997Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O
Niebuhr, R.; Bachem, K.H.; Kaufmann, U.; Maier, M.; Merz, C.; Santic, B.; Schlotter, P.; Jürgensen, H.
Zeitschriftenaufsatz
1997Ionized donor bound excitons in GaN
Santic, B.; Merz, C.; Kaufmann, U.; Niebuhr, R.; Obloh, H.; Bachem, K.
Zeitschriftenaufsatz
1997Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance
Kunzer, M.; Baur, J.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I.
Zeitschriftenaufsatz
1997Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Konferenzbeitrag
1997Structural and optical properties of AlGaN/GaN quantum well structures grown by MOCVD on sapphire
Niebuhr, R.; Bachem, K.H.; Behr, D.; Hoffmann, C.; Kaufmann, U.; Lu, Y.; Santic, B.; Wagner, J.; Arlery, M.; Rouviere, J.L.; Jürgensen, H.
Konferenzbeitrag
1997Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3
Merz, C.; Kunzer, M.; Santic, B.; Kaufmann, U.; Akasaki, I.; Amano, H.
Zeitschriftenaufsatz
1996Free and bound excitons in thin wurtzite GaN layers on sapphire
Merz, C.; Kunzer, M.; Kaufmann, U.; Akasaki, I.; Amano, H.
Zeitschriftenaufsatz
1996Light generating carrier recombination and impurities in wurtzite GaN/Al2O3 grown by MOCVD
Kaufmann, U.; Kunzer, M.; Merz, C.; Akasaki, I.; Amano, H.
Konferenzbeitrag
1996MOCVD-Züchtung und Charakterisierung von Nitridischen Verbindungshalbleitern
Niebuhr, R.
Dissertation
1996Photoluminenzspektroskopie an freien und gebundenen Exzitonen in Wurtzit-GaN auf Saphirsubstrat
Merz, C.
Diplomarbeit
1996Resonant raman scattering in hexagonal GaN
Behr, D.; Wagner, J.; Schneider, J.; Amano, H.; Akasaki, I.
Zeitschriftenaufsatz
1995Characterization of residual transition metal ions in GaN and AlN
Baur, J.; Kaufmann, U.; Kunzer, M.; Schneider, J.; Amano, H.; Akasaki, I.; Detchprohm, T.; Hiramatsu, K.
Konferenzbeitrag
1995Determination of the GaN/AlN band discontinuities via the '-/0' acceptor level of iron
Baur, J.; Kunzer, M.; Maier, K.; Kaufmann, U.; Schneider, J.
Zeitschriftenaufsatz
1995Dry etching of GaN at low pressure
Pletschen, W.; Niebuhr, R.; Bachem, K.H.
Konferenzbeitrag
1995Optisch detektierte Elektronenspinresonanz an Defekten in aktuellen Verbindungshalbleitern
Kunzer, M.
Dissertation
1995Photoluminescence of residual transition metal impurities in GaN
Baur, J.; Kaufmann, U.; Kunzer, M.; Schneider, J.
Zeitschriftenaufsatz
1994Defektspektroskopie an Halbleitern mit hohem Bandabstand - GaN, SiC, Diamant
Maier, K.
Dissertation
1994Determination of the GaN/AlN band offset via the -/0 acceptor level of iron
Baur, J.; Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.
Zeitschriftenaufsatz
1994Infrared luminescence of residual iron deep level acceptors in gallium nitride -GaN- epitaxial layers.
Baur, J.; Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I.; Detchprohm, T.; Hiramatsu, K.
Zeitschriftenaufsatz
1994Iron acceptors in gallium nitride -GaN-.
Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.; Monemar, B.; Akasaki, I.; Amano, H.
Zeitschriftenaufsatz
1994ODMR studies of MOVPE-grown GaN epitaxial layers.
Kunzer, M.; Kaufmann, U.; Maier, K.; Schneider, J.; Herres, N.; Akasaki, I.; Amano, H.
Zeitschriftenaufsatz
1994Optische Spektroskopie an nitridischen III-V Halbleitern
Baur, J.
Diplomarbeit
1993Radiative energy transfer in GaN-Mg/Al2O3-Cr3plus epitaxial systems
Maier, K.; Schneider, J.; Akasaki, I.; Amano, H.
Zeitschriftenaufsatz