Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020Evidence of strong electron-phonon interaction in a GaN-based quantum cascade emitter
Hofstetter, Daniel; Beck, Hans; Epler, John E.; Kirste, Lutz; Bour, David P.
Zeitschriftenaufsatz
2020State of the Art Packaging
Schletz, A.; Endruschat, A.; Heckel, T.
Vortrag
2019High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Single event effects by atmospheric neutrons in commercial (COTS) normally-off GaN HEMT
Wölk, Dorothea; Höffgen, Stefan; Paschkowski, Eike; Steffens, Michael; Cazzaniga, Carlo; Frost, Christopher D.
Poster
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Zeitschriftenaufsatz
2018Dynamic load modulated low-voltage GaN PA using novel low-loss GaN varactors
Amirpour, Raul; Krause, Sebastian; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Investigations of active antenna doherty power amplifier modules under beam-steering mismatch
Gashi, Bersant; Krause, Sebastian; Quay, Rüdiger; Fager, Christian; Ambacher, Oliver
Zeitschriftenaufsatz
2017Atomic layer etching of gallium nitride (0001)
Kauppinen, Christoffer; Khan, Sabbir Ahmed; Sundqvist, Jonas; Suyatin, Dmitry B.; Suihkonen, Sami; Kauppinen, Esko I.; Sopanen, Markku
Zeitschriftenaufsatz
2017Enhancement of the broadband efficiency of a class-j power amplifier with varactor-based dynamic load modulation
Amirpour, Raul; Darraji, Ramzi; Ghannouchi, Fadhel; Quay, Rüdiger
Zeitschriftenaufsatz
2017Materials response to glancing incidence femtosecond laser ablation
Echlin, M.P.; Titus, M.S.; Straw, M.; Gumbsch, P.; Pollock, T.M.
Zeitschriftenaufsatz
2017Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan
Konferenzbeitrag
2016Analysis and modeling of GaN-based multi field plate Schottky power diodes
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016High temperature GaN gate driver in SOI CMOS technology
Kappert, Holger; Braun, Sebastian; Kordas, Norbert; Dreiner, Stefan; Kokozinski, Rainer
Zeitschriftenaufsatz, Konferenzbeitrag
2016Insights into interfacial changes and photoelectrochemical stability of InxGa1-xN (0001) photoanode surfaces in liquid environments
Caccamo, L.; Cocco, G.; Martin, G.; Zhou, H.; Fundling, S.; Gad, A.; Mohajerani, M.S.; Abdelfatah, M.; Estrade, S.; Peiro, F.; Dziony, W.; Bremers, H.; Hangleiter, A.; Mayrhofer, L.; Lilienkamp, G.; Moseler, M.; Daum, W.; Waag, A.
Zeitschriftenaufsatz
2016Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Poly-silicon CMOS compatible gate module for AlGaN/GaN-on-silicon MIS-HEMTs for power electronics applications
Jauss, S.A.; Schwaiger, S.; Daves, W.; Ambacher, O.
Konferenzbeitrag
2016Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
Jauss, S.A.; Kilian, S.; Schwaiger, S.; Noll, S.; Daves, W.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2015Assembly and packaging technologies for high-temperature and high-power GaN devices
Bajwa, A.A.; Qin, Yangyang; Reiner, R.; Quay, R.; Wilde, J.
Zeitschriftenaufsatz
2015Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress
Jauss, S.A.; Schwaiger, S.; Daves, W.; Noll, S.; Ambacher, O.
Konferenzbeitrag
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Zeitschriftenaufsatz
2015Implementation and investigation of mode locking in GaN-based laser diodes in external cavity configuration
Weig, T.; Höck, H.; Holc, Katarzyna; Köhler, Klaus; Wagner, Joachim; Schwarz, U.T.
Zeitschriftenaufsatz
2014Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes
Weig, T.; Lükens, G.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Konferenzbeitrag
2014Excitons and exciton-phonon coupling in the optical response of GaN
Shokhovets, S.; Bärwolf, F.; Gobsch, G.; Runge, K.; Köhler, K.; Ambacher, O.
Konferenzbeitrag, Zeitschriftenaufsatz
2014Influence of surface roughness on the optical mode profile of GaN-based violet ridge waveguide laser diodes
Holc, K.; Jakob, A.; Weig, T.; Köhler, K.; Ambacher, O.; Schwarz, U.T.
Konferenzbeitrag
2014Influence of surface roughness on the optical mode profile of GaN-based violet ridge waveguide laser diodes
Holc, K.; Jakob, A.; Weig, T.; Köhler, K.; Ambacher, O.; Schwarz, U.T.
Konferenzbeitrag
2014Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side
Passow, T.; Kunzer, M.; Börner, P.; Pletschen, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2014Manga: Manufacturable GaN SiC substates and GaN Epi-Wafer supply chain
Mikulla, M.; Stockmeier, M.; Magnussen, B.; Poisson, M.-A.; Zanoni, E.; Kuball, M.
Konferenzbeitrag
2014Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain
Mikulla, M.; Storm, S.; Henelius, N.; Poisson, M.-A.; Zanoni, E.; Kuball, M.
Konferenzbeitrag
2014A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2014A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage
Waltereit, P.; Leuther, A.; Rüster, J.; Czap, H.; Preschle, M.; Iannucci, R.; Müller, S.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2014Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
Santi, C. de; Meneghini, M.; Marioli, M.; Buffolo, M.; Trivellin, N.; Weig, T.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U.T.; Meneghesso, G.; Zanoni, E.
Zeitschriftenaufsatz, Konferenzbeitrag
2013AlGaN/GaN-based variable gain amplifiers for W-band operation
Diebold, S.; Müller, D.; Schwantuschke, D.; Wagner, S.; Quay, R.; Zwick, T.; Kallfass, I.
Konferenzbeitrag
2013Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm
Moudakir, T.; Genty, F.; Kunzer, M.; Börner, P.; Passow, T.; Suresh, S.; Patriarche, G.; Köhler, K.; Pletschen, W.; Wagner, J.; Ougazzaden, A.
Zeitschriftenaufsatz
2013Development of an epitaxial growth process on European SiC substrates for a low leakage GaN HEMT technology with power added efficiencies around 65%
Waltereit, P.; Müller, S.; Kirste, L.; Prescher, M.; Storm, S.; Weber, A.; Schauwecker, B.; Hosch, M.; Splettstößer, J.
Konferenzbeitrag
2013GaN-based high voltage transistors for efficient power switching
Waltereit, P.; Reiner, R.; Czap, H.; Peschel, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2013High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF
Mikulla, M.; Leuther, A.; Brueckner, P.; Schwantuschke, D.; Tessmann, A.; Schlechtweg, M.; Ambacher, O.; Caris, M.
Konferenzbeitrag
2013A package-integrated 50W high-efficiency RF CMOS-GaN class-E power amplifier
Heijden, M.P. van der; Acar, M.; Maroldt, S.
Konferenzbeitrag
2013Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes
Weig, T.; Schwarz, U.T.; Sulmoni, L.; Lamy, J.-M.; Carlin, J.-F.; Grandjean, N.; Boiko, D.L.
Konferenzbeitrag
2013QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz
Maroldt, S.; Aja, B.; Raay, F. van; Krause, S.; Brueckner, P.; Quay, R.
Konferenzbeitrag
2013Statistical harmonic load termination analysis of switch-mode power amplifiers employing bandpass-pulse-length modulation
Krause, S.; Maroldt, S.; Zech, C.; Quay, R.; Hein, M.
Konferenzbeitrag
2012(Al, In)GaN laser diodes with optimized ridge structures
Holc, K.; Köhler, K.; Pletschen, W.; Wagner, J.; Schwarz, U.T.
Konferenzbeitrag
2012Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2012Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2012GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2012Line beam processing for laser lift-off of GaN from sapphire
Delmdahl, R.; Pätzel, R.; Brune, J.; Senczuk, R.; Goßler, C.; Moser, R.; Kunzer, M.; Schwarz, U.T.
Zeitschriftenaufsatz
2012Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well
Danhof, J.; Schwarz, S.U.; Meyer, T.; Vierheilig, C.; Peter, M.
Zeitschriftenaufsatz
2012Trade-offs between performance and reliability in AlGaN/GaN transistors
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
Heck, S.; Maroldt, S.; Bräckle, A.; Berroth, M.; Quay, R.
Konferenzbeitrag
2011Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Dynamics of GaN-based laser diodes from violet to green
Scheibenzuber, W.; Hornuss, C.; Schwarz, U.T.
Konferenzbeitrag
2011From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2011InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
Schuh, P.; Sledzik, H.; Oppermann, M.; Quay, R.; Kühn, J.; Lim, T.; Waltereit, P.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2011Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications
Brueckner, K.; Niebelschütz, F.; Tonisch, K.; Foerster, C.; Cimalla, V.; Stephan, R.; Pezoldt, J.; Stauden, T.; Ambacher, O.; Hein, M.A.
Zeitschriftenaufsatz
2011Polarization switching of the optical gain in semipolar InGaN quantum wells
Scheibenzuber, W.; Schwarz, U.T.
Zeitschriftenaufsatz
2011Quaternary barriers for improved performance of GaN-based HEMTs
Lim, T.; Aidam, R.; Waltereit, P.; Pletschen, W.; Quay, R.; Kirste, L.; Ambacher, O.
Zeitschriftenaufsatz
2011Recent results of blue and green InGaN laser diodes for laser projection
Lutgen, S.; Dini, D.; Pietzonka, I.; Tautz, S.; Breidenassel, A.; Lell, A.; Avramescu, A.; Eichler, C.; Lermer, T.; Müller, J.; Bruederl, G.; Gomez-Iglesias, A.; Strauss, U.; Scheibenzuber, W.G.; Schwarz, U.T.; Pasenow, B.; Koch, S.
Konferenzbeitrag
2010AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz