Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Effects of angular confinement and concentration to realistic solar cells
Höhn, O.; Kraus, T.; Schwarz, U.T.; Bläsi, B.
Zeitschriftenaufsatz
2015A H-band vector modulator MMIC for phase-shifting applications
Müller, D.; Tessmann, A.; Leuther, A.; Zwick, T.; Kallfass, I.
Konferenzbeitrag
2014InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells
Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N.P.; Ekins-Daukes, N.; Lackner, D.; Philipps, S.P.; Bett, A.W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.
Zeitschriftenaufsatz
2013Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature
Baldischweiler, B.; Bruch, D.; Kallfass, I.; Seelmann-Eggebert, M.; Leuther, A.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2012Combination of angular selective photonic structure and concentrating solar cell system
Höhn, O.; Peters, M.; Zilk, M.; Ulbrich, C.; Hoffmann, A.; Schwarz, U.T.; Bläsi, B.
Konferenzbeitrag
2012Far-field imaging for direct visualization of light interferences in GaAs nanowires
Grange, Rachel; Brönstrup, Gerald; Kiometzis, Michael; Sergeyev, Anton; Richter, Jessica; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke
Zeitschriftenaufsatz
2012Highly integrated switching calibration front-end MMIC with active loads for W-band radiometers
Weissbrodt, E.; Leuther, A.; Schlechtweg, M.; Kallfass, I.; Ambacher, O.
Konferenzbeitrag
2012Imaging of waveguiding and scattering interferences in individual GaAs nanowires via second-harmonic generation
Grange, Rachel; Brönstrup, Gerald; Sergeyev, Anton; Richter, Jessica; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef
Konferenzbeitrag
2012Optimization of angularly selective photonic filters for concentrator photovoltaic
Höhn, O.; Peters, M.; Ulbrich, C.; Hoffmann, A.; Schwarz, U.T.; Bläsi, B.
Konferenzbeitrag
201160 GHz ultrawideband hybrid-integrated dual-polarized front-end in LTCC technology
Müller, R.; Ariza, A.P.; Xia, L.; Wollenschläger, F.; Schulz, A.; Lopez-Diaz, D.; Elkhouly, M.; Thomä, R.S.; Hein, M.; Müller, J.
Konferenzbeitrag
2011Monolithically integrated 200-GHz double-slot antenna and resistive mixers in a GaAs-mHEMT MMIC process
Yan, Y.; Karandikar, Y.B.; Gunnarsson, S.E.; Motlagh, B.M.; Cherednichenko, S.; Kallfass, I.; Leuther, A.; Zirath, H.
Zeitschriftenaufsatz
2011A single chip broadband noise source for noise measurements at cryogenic temperatures
Bruch, D.; Schäfer, F.; Seelmann-Eggebert, M.; Aja, B.; Kallfass, I.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2011Single-chip 220-GHz active heterodyne receiver and transmitter MMICs with on-chip integrated antenna
Abbasi, M.; Gunnarsson, S.E.; Wadefalk, N.; Kozhuharov, R.; Svedin, J.; Cherednichenko, S.; Angelov, I.; Kallfass, I.; Leuther, A.; Zirath, H.
Zeitschriftenaufsatz
2009A broadband 60-to-120 GHz single-chip MMIC multiplier chain
Abbasi, M.; Kozhuharov, R.; Kärnfelt, C.; Angelov, I.; Zirath, H.; Kallfass, I.; Leuther, A.
Konferenzbeitrag
2009High performance compound semiconductor devices and integrated circuits for advanced communication, sensor, and imaging applications
Schlechtweg, M.; Makon, R.E.; Hurm, V.; Driad, R.; Tessmann, A.; Kallfass, I.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.
Konferenzbeitrag
2009MMICs and mixed-signal ICs based on III/V technology for highest frequencies and data rates
Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Weber, R.; Chartier, S.; Driad, R.; Makon, R.E.; Hurm, V.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Riessle, M.; Zink, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.
Zeitschriftenaufsatz
2009Single-chip frequency multiplier chains for millimeter-wave signal generation
Abbasi, M.; Kozhuharov, R.; Kärnfelt, C.; Angelov, I.; Kallfass, I.; Leuther, A.; Zirath, H.
Zeitschriftenaufsatz
2008A 220 GHz (G-band) microstrip MMIC single-ended resistive mixer
Gunnarsson, S.E.; Wadefalk, N.; Angelov, I.; Zirath, H.; Kallfass, I.; Leuther, A.
Zeitschriftenaufsatz
2008A four-antenna transceiver MIMIC for 60 GHz wireless multimedia applications
Koch, S.; Kallfass, I.; Leuther, A.; Schlechtweg, M.; Saito, S.; Uno, M.
Konferenzbeitrag
2008A G-band (140-220 GHz) microstrip MMIC mixer operating in both resistive and drain-pumped mode
Gunnarsson, S.E.; Wadefalk, N.; Angelov, I.; Zirath, H.; Kallfass, I.; Leuther, A.
Konferenzbeitrag
2008Multiple-throw millimeter-wave FET switches for frequencies from 60 up to 120 GHz
Kallfass, I.; Diebold, S.; Massler, H.; Koch, S.; Seelmann-Eggebert, M.; Leuther, A.
Konferenzbeitrag
2006Wafer-level fabrication of microring resonators using adhesive wafer bonding
Dragoi, V.; Mittendorfer, G.; Thanner, C.; Lindner, P.; Alexe, M.; Pintilie, L.; Hamacher, M.; Heidrich, H.
Konferenzbeitrag
2005Reliability of 50 nm low-noise metamorphic HEMTs and LNAs
Dammann, M.; Leuther, A.; Tessmann, A.; Massler, H.; Mikulla, M.; Weimann, G.
Zeitschriftenaufsatz
2004A broadband 75-100 GHz MMIC doubler
Lynch, J.; Entchev, E.; Lyons, B.; Tessmann, A.; Massler, H.; Leuther, A.; Schlechtweg, M.
Konferenzbeitrag
2004A flip-chip packaged coplanar 94 GHz amplifier module with efficient suppression of parasitic substrate effects
Tessmann, A.; Riessle, M.; Kudszus, S.; Massler, H.
Zeitschriftenaufsatz
2004W-band multiplier chipset
Lynch, J.; Lyons, B.; Entchev, E.; Tessmann, A.; Massler, H.; Leuther, A.; Schlechtweg, M.
Zeitschriftenaufsatz
2003A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE
Bessemoulin, A.; Quay, R.; Ramberger, S.; Massler, H.; Schlechtweg, M.
Zeitschriftenaufsatz
2003Avalanche multiplication due to impact ionization in quantum-well infrared photodetectors: A quantitative approach
Rehm, R.; Schneider, H.; Walther, M.; Koidl, P.; Weimann, G.
Zeitschriftenaufsatz
2003Ferromagnet-semiconductor hybrid structures: Hall devices and tunnel junctions
Kreuzer, S.; Rahm, M.; Biberger, J.; Pulwey, R.; Raabe, J.; Schuh, D.; Wegscheider, W.; Weiss, D.
Zeitschriftenaufsatz
2003Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs
Dammann, M.; Leuther, A.; Benkhelifa, F.; Feltgen, T.; Jantz, W.
Zeitschriftenaufsatz
2002A 94 GHz single-chip FMCW radar module for commercial sensor applications
Tessmann, A.; Kudszus, S.; Feltgen, T.; Riessle, M.; Sklarczyk, C.; Haydl, W.
Konferenzbeitrag
2002Compact single-chip W-band FMCW radar modules for commercial high-resolution sensor applications
Tessmann, A.; Kudszus, S.; Feltgen, T.; Riessle, M.; Sklarczyk, C.; Haydl, W.H.
Zeitschriftenaufsatz
2002Contactless electron mobility evaluation of semi-insulating GaAs and InP wafers
Stibal, R.; Kretzer, U.; Jantz, W.
Konferenzbeitrag
2002High-reliability MOCVD-grown quantum dot laser
Sellin, R.L.; Ribbat, C.; Bimberg, D.; Rinner, F.; Konstanzer, H.; Kelemen, M.T.; Mikulla, M.
Zeitschriftenaufsatz
2002Molekularstrahl-Epitaxie und Charakterisierung von Gruppe III-Arsenid/Nitridischen Halbleitern
Geppert, T.
Diplomarbeit
2002Topographic electrical characterization of semi-insulating GaAs, InP and SiC substates
Stibal, R.; Müller, S.; Jantz, W.
Konferenzbeitrag
20011300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
Kovshb, A.R.; Maleev, N.A.; Sakharov, A.V.; Moeller, C.; Krestnikov, I.L.; Kovsh, A.R.; Mikhrin, S.S.; Zhukov, A.E.; Ustinov, V.M.; Passenberg, W.; Pawlowski, E.; Kuenzel, H.; Tsatsul'nikov, A.F.; Ledentsov, N.N.; Bimberg, D.; Alferov, Z.I.
Zeitschriftenaufsatz, Konferenzbeitrag
20016 Vpp - 66 GHz-ultrabroadband amplifier for fiber-optical transmission systems
Leich, M.; Ludwig, M.; Kuri, A.; Hülsmann, A.; Schlechtweg, M.
Zeitschriftenaufsatz
2001Design of coplanar power amplifiers for millimeter-wave system applications including thermal aspects
Bessemoulin, A.; Marsetz, W.; Baeyens, Y.; Osorio, R.; Massler, H.; Hülsmann, A.; Schlechtweg, M.
Zeitschriftenaufsatz
2001Monolithisch integrierte Millimeterwellen-Oszillatoren auf der Basis von Heterostruktur-Feldeffekttransistoren
Kudszus, S.
Dissertation
2001Push-Push Oscillators for 94 and 140 GHz Applications using standard pseudomorphic GaAs HEMTs
Kudszus, S.; Haydl, W.H.; Tessmann, A.; Bronner, W.; Schlechtweg, M.
Konferenzbeitrag
2001Suppression of parasitic substrate modes in Flip-Chip packaged coplanar W-Band amplifier MMICs
Tessmann, A.; Haydl, W.H.; Kerssenbrock, T.V.; Heide, P.; Kudszus, S.
Konferenzbeitrag
2000Analysis of HBT behavior after strong electrothermal stress
Palankovski, V.; Selberherr, S.; Quay, R.; Schultheis, R.
Konferenzbeitrag
2000Analysis of peculiar structural defects created in GaAs by diffusion of copper
Frigeri, C.; Weyher, J.; Müller, S.; Hiesinger, P.
Zeitschriftenaufsatz
2000Complementary HFETs on GaAs with 0.2µm gate length
Leuther, A.; Thiede, A.; Köhler, K.; Jakobus, T.; Weimann, G.
Konferenzbeitrag
2000Fiber-chip-coupling modules with up to 50 GHz modulation bandwidth and reusable fiber-chip-coupling mechanism
Eckhardt, T.; Krips, O.; Fischer, U.H.P.
Konferenzbeitrag
2000Metamorphic Devices
Hülsmann, A.; Benkhelifa, F.; Bronner, W.; Chertouk, M.; Hurm, V.; Köhler, K.; Leuther, A.; Walther, M.; Weimann, G.
Konferenzbeitrag
2000New reconfigurable fiber-chip coupling method for multipurpose packaging with up to 50 GHz modulation bandwidth
Fischer, U.H.P.; Peters, K.; Ziegler, R.; Pech, D.; Kilk, A.; Eckhardt, T.; Mekonnen, G.G.; Jacumeit, G.
Zeitschriftenaufsatz
2000Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator
Yu, E.; Shen, J.; Walther, M.; Lee, T.; Zhang, R.
Zeitschriftenaufsatz
2000Reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Weimann, G.
Zeitschriftenaufsatz
2000Residual strain in annealed GaAs single crystal wafers measured by scanning infrared polariscopy and x-ray diffraction
Herms, M.; Fukuzawa, M.; Melov, V.G.; Schreiber, J.; Yamada, M.
Konferenzbeitrag
2000Residual strain in annealed GaAs single crystal wafers measured by scanning infrared polariscopy and x-ray diffraction and topography
Herms, M.; Fukuzawa, M.; Melov, V.G.; Schreiber, J.; Möck, P.; Yamada, M.
Zeitschriftenaufsatz
2000Two-stage ultrabroadband driver for optical modulators
Leich, M.; Ludwig, M.; Massler, H.; Hülsmann, A.; Schlechtweg, M.
Zeitschriftenaufsatz
199940 Gbit/s high voltage modulator driver in P-HEMT technology
Leich, M.; Ludwig, M.; Hülsmann, A.; Hurm, V.; Steinhagen, F.; Thiede, A.; Schlechtweg, M.
Zeitschriftenaufsatz
1999Analytical, scaleable large signal noise model for GaAs and InP MMIC applications
Reuter, R.; Leven, A.
Konferenzbeitrag
1999Carrier capture and escape processes in In(0.25)Ga(0.75)As-GaAs quantum-well lasers
Romero, B.; Esquivias, I.; Weisser, S.; Larkins, E.C.; Rosenzweig, J.
Zeitschriftenaufsatz
1999Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
1999Contactless mapping of mesoscopic resistivity variations in semi-insulating substrates
Stibal, R.; Wickert, M.; Hiesinger, P.; Jantz, W.
Zeitschriftenaufsatz
1999Coplanar 4-bit HEMT phase shifters for 94 GHz phased array radar systems
Züfle, K.; Steinhagen, F.; Haydl, W.H.; Hülsmann, A.
Konferenzbeitrag
1999Coplanar W-band SPDT and SPtt resonated PIN diode switsches
Steinhagen, F.; Massler, H.; Haydl, W.H.; Hülsmann, A.; Köhler, K.
Konferenzbeitrag
1999High resolution EL2 and resistivity topography of Si GaAs wafers
Wickert, M.; Stibal, R.; Hiesinger, P.; Jantz, W.; Wagner, J.; Jurisch, M.; Kretzer, U.; Weinert, B.
Konferenzbeitrag
1999Packaging of OEICs with tapered fibers for optical communications systems with up to 45 GHz modulation bandwidth
Fischer, U.H.P.; Peters, K.; Ziegler, R.; Pech, D.; Kilk, A.; Mekonnen, G.G.; Jacumeit, G.
Konferenzbeitrag
1999A study of defects in LEC GaAs after copper diffusion
Frigeri, C.; Weyher, J.L.; Müller, S.; Hiesinger, P.
Konferenzbeitrag
1999Thermische und elektrische Konzeption von GaAs-HEMTs für Leistungsverstärker bis 80 GHz
Marsetz, W.
Dissertation
1998A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates
Lang, M.; Wang, Z.-G.; Thiede, A.; Lienhart, H.; Jakobus, T.; Bronner, W.; Hornung, J.; Hülsmann, A.
Konferenzbeitrag
1998Di-carbon complexes in AlAs and GaAs
Latham, C.D.; Jones, R.; Wagner, J.; Davidson, B.R.; Newman, R.C.; Button, C.C.; Briddon, P.R.; Öberg, S.
Zeitschriftenaufsatz
1998Monolithisch integrierte W-Band-Mischer in Koplanartechnik auf der Basis einer pseudomorphen HEMT-Technologie
Verweyen, L.
Dissertation
1998Secondary ion mass spectrometry round-robin study for relative sensitivity factors in gallium arsenide
Homma, Y.; Tohjou, F.; Masamoto, A.; Shibata, M.; Shichi, H.; Yoshioka, Y.; Adachi, T.; Akai, T.; Gao, Y.; Hirano, M.; Hirano, T.; Ihara, A.; Kamejima, T.; Koyama, H.; Maier, M.; Matsumoto, S.; Matsunaga, H.; Nakamura, T.; Obata, T.; Okuno, K.; Sadayama, S.; Sasa, K.; Sasakawa, K.; Shimanuki, Y.; Suzuki, S.; Sykes, D.E.; Tachikawa, I.; Takase, H.; Tanigaki, T.; Tomita, M.; Tosho, H.; Kurosawa, S.
Zeitschriftenaufsatz
1998Selective etching of III-V materials
Weyher, J.L.
Konferenzbeitrag
1997DC Tieftemperaturcharakterisierung von HEMTs
Fischer, S.
Diplomarbeit
1997Di-Carbon defects in annealed highly carbon doped GaAs
Wagner, J.; Newman, R.C.; Davidson, B.R.; Westwater, S.P.; Bullough, T.J.; Joyce, T.B.; Latham, C.D.; Jones, R.; Öberg, S.
Zeitschriftenaufsatz
1997Messung von Gewinnspektren und alpha-Faktoren von GaAs- und InP-basierenden Quantenfilm-Laserdioden
Länge, R.
Diplomarbeit
1997Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Schlechtweg, M.; Hurm, V.; Wang, Z.-G.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Köhler, K.; Bronner, W.; Fink, T.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M.
Konferenzbeitrag
1997Spektroskopische Photolumineszenz-Topographie von Defektstrukturen in Verbindungshalbleitern
Fitz, C.,
Diplomarbeit
1997Trockenätzverfahren für die Herstellung von monolithisch integrierten optoelektronischen Schaltkreisen
Daleiden, J.
Dissertation
199610 and 20 Gbit/s clock recovery GaAs IC with 288 deg phase-shifting function
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Zeitschriftenaufsatz
199610 Gbit/s long-wavelength monolithic integrated optoelectronic receeiver grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Bronner, W.; Fink, T.; Haupt, M.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.
Zeitschriftenaufsatz
199620-40 Gbit/s 0.2 mu m GaAs HEMT chip set for optical data receiver
Berroth, M.; Lang, M.; Wang, Z.-G.; Lao, Z.; Thiede, A.; Rieger-Motzer, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Hülsmann, A.; Schneider, J.
Konferenzbeitrag
1996Carrier capture and escape times in In(0,35)Ga(0,65)As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
1996Critical point broadening in the dielectric function of thin AlAs barriers on GaAs
Wagner, J.; Weimar, U.; Gaymann, A.; Köhler, K.
Konferenzbeitrag
1996Influence of multi wafer annealing of LEC GaAs substrates on the quality of epitaxial layers
Forker, J.; Baeumler, M.; Weyher, J.L.; Jantz, W.; Bernklau, D.; Riechert, H.; Inoue, T.
Konferenzbeitrag
1996Integrierte Mikrowellenschips für die Kommunikationstechnik
Diehl, R.
Zeitschriftenaufsatz
1996Isolated hydrogen molecules in GaAS
Vetterhöffer, J.; Wagner, J.; Weber, J.
Zeitschriftenaufsatz
1996Lattice locations of silicon atoms in delta-doped layers in GaAs at high doping concentrations
Newman, R.C.; Ashwin, M.J.; Fahy, M.R.; Hart, L.; Holmes, S.N.; Roberts, C.; Zhang, X.; Wagner, J.
Zeitschriftenaufsatz
1996Operational amplifier design using GaAs MESFET for temperature applications up to 350 deg C
Baureis, P.; Gerber, J.; Würfl, J.; Janke, B.
Konferenzbeitrag
1996Optimierung, Herstellung und Charakterisierung von GaxIn1-xP/In0,25Ga0,75As/GaAs-Heterostruktur-Feldeffekttransistoren
Hilsenbeck, J.
Diplomarbeit
1996Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si
Däweritz, L.; Schützendübe, P.; Stahrenberg, K.; Maier, M.; Ploog, K.
Konferenzbeitrag
1996Tailoring of Si doping layers in GaAs during molecular beam epitaxy
Däweritz, L.; Kostial, H.; Ramsteiner, M.; Klann, R.; Schützendübe, P.; Stahrenberg, K.; Behrend, J.; Hey, R.; Maier, M.; Ploog, K.
Zeitschriftenaufsatz
1995Atomic-scale controlled incorporation of ultrahigh-density Si doping sheets in GaAs
Däweritz, L.; Hey, R.; Ramsteiner, M.; Wagner, J.; Maier, M.; Kostial, H.; Behrend, J.; Höricke, M.
Zeitschriftenaufsatz
1995Dynamics of the H-CAs complex in GaAs determined from Raman measurements
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Zeitschriftenaufsatz
1995The dynamics of the H-CAs complex in GaAs studied by raman spectroscopy
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Konferenzbeitrag
1995Elastic contants and Poisson ratio in the system AlAs-GaAs
Herres, N.; Köhler, K.; Krieger, M.; Sigg, H.; Bachem, K.H.
Zeitschriftenaufsatz
1995GaAs readout electronics for particle detectors
Lauxtermann, S.; Bronner, W.; Runge, K.
Konferenzbeitrag
1995GaInP/InGaAs MODFETs on GaAs grown by OMVPE for high frequency and power applications
Pereiaslavets, B.; Bachem, K.; Braunstein, J.; Eastman, L.F.
Konferenzbeitrag
1995Herstellung und Charakterisierung von GaAs/In(x)Ga(1-x)As/GaAs(1-y)Sb(y) Heterostrukturen
Matthias, P.
Diplomarbeit
1995Integrierte GaAs MODFET Elektronik zur Auslese von Strahlendetektoren
Lauxtermann, S.
Dissertation
1995Monolithic integrated optoelectronic circuits
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G.
Konferenzbeitrag
1995New MODFET small signal circuit model required for millimeter-wave MMIC design: extraction and validation to 120 GHz
Tasker, P.J.; Braunstein, J.
Konferenzbeitrag
1995A novel pseudomorphic (GaAs1-xSbx-InyGa1-yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics
Peter, M.; Forker, J.; Winkler, K.; Bachem, K.H.; Wagner, J.
Zeitschriftenaufsatz
1995Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model
Martin, G.H.; Seaford, K.L.; Spencer, R.; Braunstein, J.; Eastman, L.F.
Konferenzbeitrag
1995Silicon incorporation in GaAs. From delta-doping to monolayer insertion
Wagner, J.; Newman, R.C.; Roberts, C.
Zeitschriftenaufsatz
1995Wire-Like ordering of Si dopant atoms on GaAs-001- vincinal surgaces studied by raman scattering
Ramsteiner, M.; Däweritz, L.; Hey, R.; Jungk, G.; Wagner, J.
Konferenzbeitrag
1994The assignment of the 78/203meV double acceptor in GaAs to BAs impurity antisite centres.
Newman, R.C.; Davidson, B.R.; Addinall, R.; Murray, R.; Emmert, J.W.; Wagner, J.; Götz, W.; Roos, G.; Pensl, G.
Zeitschriftenaufsatz
1994Device and process technologies for monolithic, high-speed, low-chirp semiconductor laser transmitters.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Bronner, W.; Hornung, J.; Köhler, K.
Konferenzbeitrag
1994Fabrication of high speed MMICs and digital ICs using T-gate technology on pseudomorphic-HEMT structures
Hülsmann, A.; Bronner, W.; Hofmann, P.; Köhler, K.; Raynor, B.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Konferenzbeitrag
1994Group-V antisite defects, VGa, in GaAs.
Kaufmann, U.
Zeitschriftenaufsatz
1994MBE growth of In0.35Ga0.65As/GaAs MQWs for high-speed lasers - relaxation limits and factors influencing dislocation glide
Larkins, E.C.; Baeumler, M.; Wagner, J.; Bender, G.; Herres, N.; Maier, M.; Rothemund, W.; Fleissner, J.; Jantz, W.; Ralston, J.D.; Flemig, G.; Brenn, R.
Konferenzbeitrag
1994Photonik und Optoelektronik für die Informationstechnik des 21. Jahrhunderts
Diehl, R.
Zeitschriftenaufsatz
1994Raman scattering investigation on the ordered incorporation of Si dopant atoms on GaAs-001- vicinal surfaces during MBE growth.
Ramsteiner, M.; Wagner, J.; Jungk, G.; Behr, D.; Däweritz, L.; Hey, R.
Zeitschriftenaufsatz
1994Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs-001- vicinal surfaces.
Ramsteiner, M.; Wagner, J.; Behr, D.; Jungk, G.; Däweritz, L.; Hey, R.
Zeitschriftenaufsatz
1994Self-consistent Monte Carlo calculation of electron accumulation and charge transport in n-type GaAs field emitters
Moglestue, C.; Gray, H.F.
Zeitschriftenaufsatz
1994Simulation der Bewegung von Elektronen und Löchern in Halbleiterdetektoren aus semiisolierendem GaAs
Kleindienst, T.
Diplomarbeit
1993Contactless resistivity mapping of semi-insulating substrates.
Jantz, W.; Stibal, R.
Zeitschriftenaufsatz
1993Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Zeitschriftenaufsatz
1993A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors
Stareev, G.; Kunzel, H.; Dortmann, G.
Zeitschriftenaufsatz
1993Dünnschicht-Solarzellen aus Galliumarsenid
Wettling, W.
Konferenzbeitrag
1993Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p-GaAs
Stareev, G.
Zeitschriftenaufsatz
1993High resolution carrier temperature and lifetime topography of semi-insulating GaAs using spatially and spectrally resolved photoluminescence
Wang, Z.M.; Windscheif, J.; As, D.J.; Jantz, W.
Zeitschriftenaufsatz
1993High-throughput two-melt LPE fabrication of AlGaAs/GaAs solar cells
Habich, A.; Nguyen, T.T.T.; Sulima, O.V.; Welter, H.; Wettling, W.; Bett, A.W.
Konferenzbeitrag
1993Identification of the BiGa heteroantisite defect in GaAs:Bi
Kunzer, M.; Jost, W.; Kaufmann, U.; Hobgood, H.M.; Thomas, R.N.
Zeitschriftenaufsatz
1993Monolayer-resolved x-ray-excited Auger-electron diffraction from single-plane emission in GaAs
Seelmann-Eggebert, M.; Fasel, U.; Larkins, E.C.; Osterwalder, J.
Zeitschriftenaufsatz
1993Nucleation, relaxation and redistribution of Si layers in GaAs.
Brandt, O.; Crook, G.; Ploog, K.; Bierwolf, R.; Hohenstein, M.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1993Optimization of optical properties of graded-xAlxGa1-xAs window layers on LPE-grown GaAs solar cells
Habermann, G.; Lutz, F.; Schetter, C.; Sulima, O.V.; Wettling, W.; Bett, A.W.
Konferenzbeitrag
1993P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Maier, M.; Fleissner, J.
Zeitschriftenaufsatz
1993Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.
Konferenzbeitrag
1993Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping.
Ramsteiner, M.; Hiesinger, P.; Köhler, K.; Rössler, U.; Wagner, J.
Zeitschriftenaufsatz
1993Time-resolved photocurrent response of metal-semiconductor-metal photodetectors to double-pulse excitation.
Klingenstein, M.; Kuhl, J.; Rosenzweig, J.; Moglestue, C.; Hülsmann, A.; Schneider, J.
Zeitschriftenaufsatz
1993Two-dimensional hole gas and Fermi-edge singularity in Be delta-doped GaAs
Richards, D.; Schneider, H.; Hendorfer, G.; Maier, M.; Fischer, A.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1992Comparative study of the SbGa heteroantisite and off-center OAs in GaAs
Hendorfer, G.; Bohl, B.; Fuchs, F.; Kaufmann, U.; Kunzer, M.
Zeitschriftenaufsatz
1992The confining potential for carriers in planar doped GaAs and the effect of photoexcitation.
Richards, D.; Fischer, A.; Ploog, K.; Wagner, J.
Konferenzbeitrag
1992Effect of spatial localisation of dopant atoms on the confining potential and electron subband structure in delta-doped GaAs-Si.
Richards, D.; Wagner, -; Ramsteiner, M.; Ekenberg, U.; Fasol, G.; Ploog, K.
Zeitschriftenaufsatz
1992Electro-optic and photoconductive sampling of ultrafast photodiodes with femtosecond laser pulses.
Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Aufsatz in Buch
1992EPR observation of a deep center with Ap1 electron configuration in GaAs.
Kaufmann, U.; Baeumler, M.; Hendorfer, G.
Zeitschriftenaufsatz
1992Excited defect energy states from temperature dependent ESR.
Kisielowski, C.; Maier, K.; Schneider, J.; Oding, V.
Zeitschriftenaufsatz
1992Fermi edge singularity and screening effects in the luminescence spectra of Si or Be delta-doped GaAs.
Ganser, P.; Fischer, A.; Köhler, K.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1992GaAs bipolar transistors with a Ga0.5In0.5P hole barrier layer and carbon-doped base grown by MOVPE.
Bachem, K.H.; Lauterbach, T.; Pletschen, W.
Zeitschriftenaufsatz
1992GaAs-Technologie - Stand und Tendenzen. Tl.1
Diehl, R.
Zeitschriftenaufsatz
1992GaAs-Technologie - Stand und Tendenzen. Tl.2 und Schluß
Diehl, R.
Zeitschriftenaufsatz
1992Laser beam testing - fast switches for generation of picosecond electrical pulses.
Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Zeitschriftenaufsatz
1992Magnetic circular dichroism and optical detection of electron paramagnetic resonance of the SbGa heteroantisite defect in GaAs:Sb
Omling, P.; Hofmann, D.M.; Baeumler, M.; Kaufmann, U.; Kunzer, M.
Zeitschriftenaufsatz
1992Novel molecular-beam epitaxially grown GaAs/AlGaAs quantum well structures for infrared detection and integrated optics at 3-5 and 8-12 mym.
Schneider, H.; Kheng, K.; Fuchs, F.; Bittner, P.; Dischler, B.; Gallagher, D.F.G.; Koidl, P.; Ralston, J.D.
Zeitschriftenaufsatz
1992Optische Untersuchungen an hoch dotierten GaAs-Schichten und GaAs/AlXGa1-XAs-Heterostrukturen
Ramsteiner, M.
Dissertation
1992Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga0.5In0.5P/GaAs
Lauterbach, T.
Dissertation
1992Picosecond electron and hole transport in metal-semiconductor-metal photodetectors.
Kuhl, J.; Klingenstein, M.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Zeitschriftenaufsatz
1992Picosecond photodetectors fabricated on low temperature GaAs
Klingenstein, M.; Kuhl, J.; Nötzel, R.; Ploog, K.; Rosenzweig, J.; Moglestue, C.; Schneider, J.; Hülsmann, A.; Köhler, K.
Konferenzbeitrag
1992Raman and ion channeling of damage in ion-implanted GaAs - dependence on ion dose and dose rate.
Desnica, U.V.; Haynes, T.E.; Holland, O.W.; Wagner, J.
Zeitschriftenaufsatz
1992Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers.
Bachem, K.H.; Ashwin, M.; Newman, R.C.; Woodhouse, K.; Nicklin, R.; Bradley, R.R.; Lauterbach, T.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1992Raman spectroscopy assessment of laterally structured delta-doped GaAs-Si.
Hülsmann, A.; Kaufel, G.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
1992Raman spectroscopy of delta-doped GaAs layers and wires.
Wagner, J.
Konferenzbeitrag
1992Raman spectroscopy of localized vibrational modes from carbon and carbon-hydrogen pairs in heavily carbon-doped GaAs epitaxial layers
Bachem, K.H.; Mörsch, G.; Kamp, M.; Fischer, A.; Lauterbach, T.; Maier, M.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1992Special nuclear magnetic resonance techniques.
Ackermann, H.; Bagraev, N.T.; Harley, R.T.; Schneider, J.
Aufsatz in Buch
1992Temperature-induced spin reversal in n-GaAs.
Batke, E.; Bollweg, K.; Merkt, U.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1992Ultrafast electron dynamics at semiconductor surfaces and interfaces studied with subpicosecond laser photoemission.
Haight, R.; Baeumler, M.; Silberman, J.A.; Kirchner, P.D.
Zeitschriftenaufsatz
199110 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Axmann, A.; Berroth, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Konferenzbeitrag
1991A 4 Gs/s comparator fabricated in an AlGaAs/GaAs heterojunction bipolar process
Cepl, F.; Baureis, P.; Seitzer, D.; Zwicknagel, P.
Konferenzbeitrag
1991Ambient and low temperature photoluminescence topography of GaAs substrates, epitaxial and implanted layers.
Wang, Z.M.; As, D.J.; Jantz, W.; Windscheif, J.
Zeitschriftenaufsatz
1991Assessment of mismatched epitaxial layers by X-ray rocking curve measurements and simulations
Neumann, G.; Bender, G.; Herres, N.
Zeitschriftenaufsatz
1991Characterization of picosecond GaAs metal-semiconductor-metal photodetectors.
Axmann, A.; Schneider, J.; Hülsmann, A.; Lambsdorff, M.; Kuhl, J.; Klingenstein, M.; Leier, H.; Forchel, A.; Moglestue, C.; Rosenzweig, J.
Konferenzbeitrag
1991Comparison of five methods in determination of parasitic resistances in ion implanted GaAs FETs
Baureis, P.; Zimmer, T.
Konferenzbeitrag
1991Crystal-field splittings of Er3+-4f11- in molecular beam epitaxially grown ErAs/GaAs.
Schneider, J.; Müller, H.D.; Fuchs, F.; Thonke, K.; Dörnen, A.; Ralston, J.D.
Zeitschriftenaufsatz
1991Effect of spatial localization of dopant atoms of the spacing of electron subbands in delta-doped GaAs-Si.
Richards, D.; Fasol, G.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1991Electrical damage due to low energy plasma processing of GaAs structures
Kaufel, G.; Zappe, H.P.
Konferenzbeitrag
1991Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor -78/203 meV- in GaAs.
Roos, G.; Schöner, A.; Pensl, G.; Meyer, B.K.; Newman, R.C.; Wagner, J.
Zeitschriftenaufsatz
1991Electron temperature and lifetime mapping of photoexcited carrier in semiinsulating LEC GaAs substrates by photoluminescence
Wang, Z.M.; As, D.J.; Jantz, W.; Windscheif, J.
Konferenzbeitrag
1991Fermi-edge singularity and band-filling effects in the luminescence spectrum of Be-delta-doped GaAs
Ruiz, A.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1991Fermi-edge singularity and screening effects in the absorption and luminescence spectrum of Si delta-doped GaAs.
Fischer, A.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1991GaAs - a cornerstone in future information technologies -systems aspects, devices, processing-.
Rupprecht, H.S.; Diehl, R.
Konferenzbeitrag
1991Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum-well structures
As, D.J.; Brandt, G.; Dischler, B.; Koidl, P.; Maier, M.; Ralston, J.D.; Ramsteiner, M.
Zeitschriftenaufsatz
1991Limitations of the impulse response of GaAs metal-semiconductor metal photodetectors.
Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Moglestue, C.; Axmann, A.; Schneider, J.; Hülsmann, A.; Rosenzweig, J.
Konferenzbeitrag
1991Low temperature infrared measurements and photo-induced persistent changes of intersubband transitions in GaAs/AlGaAs multiple quantum wells
Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ralston, J.D.; Ramsteiner, M.
Konferenzbeitrag
1991Optimization of LPE-grown high efficiency GaAs solar cells
Cardona, S.; Ehrhardt, A.; Lutz, F.; Welter, H.; Wettling, W.; Bett, A.W.
Konferenzbeitrag
1991Optisch detektierte magnetische Resonanz von III-V Halbleitern und optisches Pumpen and III-V Halbleiterstrukturen
Kunzer, M.
Diplomarbeit
1991Photolumineszenz-Untersuchungen an GaAs/AlxGa1-xAs-Heterostrukturen
Korf, S.
Diplomarbeit
1991Photovoltaic intersubband detectors for 3-5 mym using GaAs quantum wells sandwiched between AlAs tunnel barriers.
Dischler, B.; Fuchs, F.; Koidl, P.; Ralston, J.D.; Schneider, H.; Schwarz, K.
Zeitschriftenaufsatz
1991Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectors.
Moglestue, C.; Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Axmann, A.; Schneider, J.; Hülsmann, A.; Rosenzweig, J.
Zeitschriftenaufsatz
1991Plasma etching damage in GaAs studied by resonant Raman scattering.
Pletschen, W.; Kaufel, G.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
1991Quality assessment of liquid encapsulated Czochralski grown semi-insulating GaAs substrates.
Jantz, W.
Aufsatz in Buch
1991Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy.
Murray, R.; Newman, R.C.; Beall, R.B.; Harris, J.J.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1991Raman depth profiling in situ sputtering.
Koidl, P.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1991Raman scattering from the intrinsic 68-meV acceptor in Ga-rich GaAs
Ko, K.H.; Lagowski, J.; Wagner, J.
Zeitschriftenaufsatz
1991Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes
Lambsdorff, M.; Klingenstein, M.; Kuhl, J.; Moglestue, C.; Rosenzweig, J.; Axmann, A.; Schneider, J.; Hülsmann, A.; Leier, H.; Forchel, A.
Zeitschriftenaufsatz
1991Transit time limited response of GaAs metal-semiconductor-metal photodiodes.
Klingenstein, M.; Kuhl, J.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Zeitschriftenaufsatz
1991Two-wavelength transmission: A rapid and precise method for measuring the light absorption in semiconductors
Sartorius, B.; Brandstattner, M.; Venghaus, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Variation of material parameters along the growth direction of liquid encapsulated Czochralski grown GaAs ingots
Stibal, R.; Jantz, W.; Wagner, J.; Windscheif, J.
Zeitschriftenaufsatz
1991Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy.
Ralston, J.D.; Tasker, P.J.; Zappe, H.P.; Esquivias, I.; Fleissner, J.; Gallagher, D.F.G.
Zeitschriftenaufsatz
1990Effects of Si incorporation and electrical activation of intersubband optical absorption in MBE-grown GaAs/AlGaAs multiple quantum well structures
Ralston, J.D.; Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ramsteiner, M.; Ennen, H.
Konferenzbeitrag
1990Electronic structure of single delta-doped GaAs layers studied by photoluminescence and raman spectroscopy.
Ploog, K.; Wagner, J.
Konferenzbeitrag
1990Elektrische und optische Eigenschaften von ErAs und ErAs/GaAs Vielfachschichten hergestellt mit MBE auf GaAs
Ralston, J.D.; Fuchs, F.; Hiesinger, P.; Schneider, J.; Herres, N.; Ennen, H.; Wennekers, P.
Konferenzbeitrag
1990Influence of RIE- induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures.
As, D.J.; Kaufel, G.; Köhler, K.; Rothemund, W.; Zappe, H.P.; Jantz, W.; Schweizer, T.; Frey, T.
Zeitschriftenaufsatz
1990Monte Carlo particle calculation and direct observation of the electron and hole contribution to the response of a GaAs-metal semiconductor-metal-Schottky diode to a short light pulse
Moglestue, C.; Axmann, A.; Schneider, J.; Lambsdorff, M.; Kuhl, J.; Klingenstein, M.; Leier, H.; Forchel, A.; Rosenzweig, J.
Konferenzbeitrag
1990Photoluminescence from the quasi-two-dimensional electron gas at a single silicon delta-doped layer in GaAs
Ploog, K.; Fischer, A.; Wagner, J.
Zeitschriftenaufsatz
1990Raman spectroscopy of impurities in GaAs
Wagner, J.
Konferenzbeitrag
1989Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy.
Schneider, J.; Mooney, P.M.; Lagowski, J.; Matsui, M.; Beard, D.R.; Newman, R.C.; Dischler, B.; Seelewind, H.
Zeitschriftenaufsatz
1989The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and raman scattering.
Murray, R.; Newman, R.C.; Sangster, M.J.L.; Beall, R.B.; Harris, J.J.; Wright, P.J.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1989Determination of the FR3 acceptor level by direct excitation of the FR3 EPR in undoped semiinsulating GaAs.
Baeumler, M.; Mooney, P.M.; Kaufmann, U.
Zeitschriftenaufsatz
1989Double modulation techniques in Fourier Transform infrared photoluminescence
Fuchs, F.; Lusson, A.; Koidl, P.; Wagner, J.
Konferenzbeitrag
1989Gallium-Arsenid - Das Zeitalter der Superchips
Rupprecht, H.S.; Diehl, R.
Zeitschriftenaufsatz
1989Gas phase depletion in horizontal MOCVD reactors.
Neumann, G.; Winkler, K.; Bachem, K.H.
Konferenzbeitrag
1989Hall effects, DLTS and optical investigations on the intrinsic 78/203 meV acceptor in GaAs.
Roos, G.; Schöner, A.; Pensil, G.; Krambrock, K.; Meyer, B.; Spaeth, J.M.; Wagner, J.
Zeitschriftenaufsatz
1989Infrared fourier transform spectroscopy on local vibrational modes in GaAs
Löhnert, K.; Dischler, B.; Jantz, W.; Seelewind, H.
Konferenzbeitrag
1989Magnetic circular dichroism investigation on the neutral and the ionized manganese acceptor in GaAs.
Baeumler, M.; Schneider, J.; Kaufmann, U.; Meyer, B.
Zeitschriftenaufsatz
1989Optical spectroscopy of impurity levels in GaAs
Wagner, J.
Zeitschriftenaufsatz
1989Raman spectroscopic study of Si local vibrational modes in GaAs.
Ramsteiner, M.; Murray, R.; Newman, R.C.; Wagner, J.
Zeitschriftenaufsatz
1989The spectroscopic evidence for the identity of EL2 and the AsGa antisite in As-grown GaAs.
Kaufmann, U.
Aufsatz in Buch
1988Channeling of Si during implantation into GaAs for MESFETs
Maier, M.; Bachem, K.H.; Hornung, J.
Konferenzbeitrag
1988Damage assessment of low-dose Si-implanted GaAs by Raman spectroscopy.
Wagner, J.
Zeitschriftenaufsatz
1988Infrared investigation of persistent electrons in undoped semi-insulating GaAs, photogenerated during EL2 bleaching at 10 K
Fuchs, F.; Dischler, B.
Konferenzbeitrag
1988Origin of the magnetic-circular-dichroism absorption of undoped as-grown GaAs
Kaufmann, U.; Windscheif, J.
Zeitschriftenaufsatz
1988Quantitative optical analysis of residual shallow acceptors in semi-insulating GaAs
Löhnert, K.; Jantz, W.; Ramsteiner, M.; Wagner, J.
Konferenzbeitrag
1988Raman scattering of residual acceptors in GaAs and its application to optical topography
Windscheif, J.; Wagner, J.
Konferenzbeitrag
1988Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J.
Zeitschriftenaufsatz
1988Raman study of Si plus -implanted GaAs.
Fritzsche, C.; Wagner, J.
Zeitschriftenaufsatz
1988Resonance Raman scattering of Si local vibrational modes in GaAs
Maier, M.; Ramsteiner, M.; Ennen, H.; Wagner, J.
Zeitschriftenaufsatz
1988A simple theoretical model for the magnetic circular dichroism absorption of undoped as-grown GaAs
Kaufmann, U.; Windscheif, J.
Konferenzbeitrag
1987Effect of rapid thermal annealing on ion-implanted and neutrontransmutation doped GaAs
Ramsteiner, M.; Haydl, W.H.; Wagner, J.
Zeitschriftenaufsatz
1987Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs
Newmann, R.C.; Maguire, J.; Dischler, B.; Seelewind, H.; Wagner, J.
Konferenzbeitrag
1987GaAs wafer investigation by near-infrared transmission and photoluminescence topography techniques
Windscheif, J.; Wettling, W.
Konferenzbeitrag
1987Optische Topographie an GaAs - Wafern, -Schichten und -Oberflächen
Wettling, W.; Windscheif, J.
Konferenzbeitrag
1987Photoresponse of the FR3 electron-spin-resonance signal in GaAs
Wilkening, W.; Baeumler, M.; Kaufmann, U.
Zeitschriftenaufsatz
1987Raman spectroscopic study of point defects in bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J.
Konferenzbeitrag
1987Resolved structure in the quenching band of the EL2 center in GaAs, studied by infrared spectroscopy.
Dischler, B.; Fuchs, F.
Zeitschriftenaufsatz
1987Resonant two-phonon raman scattering in GaAs. A sensitive probe for implantation damage and annealing
Wagner, J.; Hoffmann, C.
Zeitschriftenaufsatz
1986Effects of ingot and wafer annealing of the properties of undoped semi-insulating GaAs. Comparison with in-alloyed dislocation-free as grown GaAs
Loehnert, K.; Nagel, G.; Wettling, W.
Konferenzbeitrag
1986Electronic raman scattering from residual acceptors in GaAs
Seelewind, H.; Newman, R.C.; Maguire, J.; Wagner, J.
Konferenzbeitrag
1986Infrared investigations of persistent carriers, photo-generated during EL2 bleaching in GaAs
Fuchs, F.; Dischler, B.; Kaufmann, U.
Konferenzbeitrag
1986Optically induced far-infrared absorption from residual acceptors in as-grown GaAs
Koidl, P.; Seelewind, H.; Wagner, J.
Zeitschriftenaufsatz
1986Photoresponse of the EL2 absorption in undoped semi-insulating GaAs
Fuchs, F.; Dischler, B.; Kaufmann, U.
Zeitschriftenaufsatz
1986Residual acceptor assessment in as-grown bulk GaAs by raman and selective pair luminescence spectroscopy - A comparative study
Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1985Photo-EPR and spatially resolved EPR of AsBa in as-grown GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Konferenzbeitrag
1985Zeeman spectroscopy of the vanadium luminescence in GaP and GaAs
Aszodi, G.; Kaufmann, U.
Zeitschriftenaufsatz
1984Antisite Defekte in III-V-Halbleitern
Aschmoneit, E.K.; Kaufmann, U.; Windscheif, J.
Zeitschriftenaufsatz
1984Concentration and thermal stability of As tief Ga in GaAs - Correlation with EL2
Baeumler, M.; Schneider, J.; Koehl, F.; Kaufmann, U.; Windscheif, J.
Konferenzbeitrag
1984Fundamental and harmonic operation of milimeter-wave Gunn diodes.
Haydl, W.H.
Zeitschriftenaufsatz
1983AsGa antisite defects in GaAs
Weber, E.R.; Schneider, J.
Zeitschriftenaufsatz
1983ESR of defects in III-V compounds
Schneider, J.
Konferenzbeitrag
1983Millimeter-wave operation of a 20 microns long field effect controlled transferred-electron device
Kuch, R.; Luebke, K.; Thim, H.; Chabicovsky, R.; Lindner, G.; Haydl, W.H.
Konferenzbeitrag
1983RF-Plasma deposited amorphous hydrogenated hard carbon thin films - preparation, properties and applications.
Brandt, G.; Bubenzer, A.; Dischler, B.; Koidl, P.
Zeitschriftenaufsatz
1983A study of the 0.1-eV conversion acceptor in GaAs
Look, D.C.; Pomrenke, G.S.
Zeitschriftenaufsatz
1982Identification of As
Weber, E.R.; Wosinski, T.; Kaufmann, U.; Windscheif, J.; Ennen, H.
Zeitschriftenaufsatz
1982Neutron-transmutation doping of GaAs - as studied by ESR.
Schneider, J.; Kaufmann, U.
Zeitschriftenaufsatz
1982The role of point defects in GaAs.
Schneider, J.
Konferenzbeitrag
1982Selenium doping of molecular beam epitaxial GaAs using SnSe2.
Smith, R.S.; Ganser, P.M.; Ennen, H.
Zeitschriftenaufsatz
1982Single crystal Fe films grown on GaAs substrates
Ganser, P.M.; Jantz, W.; Smith, R.; Wettling, W.
Zeitschriftenaufsatz