Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2002High-field step-stress and long term stability of PHEMTs with different gate and recess lengths
Cova, P.; Menozzi, R.; Dammann, M.; Feltgen, T.; Jantz, W.
Zeitschriftenaufsatz
1997High performance double recessed Al(0.2)Ga(0.8)As/In(0.25)Ga(0.75)As PHEMTs for microwave power applications
Marsetz, W.; Hülsmann, A.; Kleindienst, T.; Fischer, S.; Demmler, M.; Bronner, W.; Fink, T.; Köhler, K.; Schlechtweg, M.
Konferenzbeitrag
1994Fabrication of high breakdown pseudomorphic doped field effect transistors using double dry etched gate recess technology in combination with e-beam T-gate lithography
Hülsmann, A.; Bronner, W.; Köhler, K.; Braunstein, J.; Tasker, P.J.
Zeitschriftenaufsatz