Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Towards reconfigurable electronics: Silicidation of top-down fabricated silicon nanowires
Khan, Muhammad Bilal; Deb, Dipjyoti; Kerbusch, Jochen; Fuchs, Florian; Löffler, Markus; Banerjee, Sayanti; Mühle, Uwe; Weber, Walter Michael; Gemming, Sibylle; Schuster, Jörg; Erbe, Artur; Georgiev, Yordan M.
Zeitschriftenaufsatz
2017Doping of graphene induced by boron/silicon substrate
Dianat, Arezoo; Liao, Zhongquan; Gall, Martin; Zhang, Tao; Gutierrez, Rafael; Zschech, Ehrenfried; Cuniberti, Gianaurelio
Zeitschriftenaufsatz
2017Easy plating - study on contact interface properties of parasitic plating-free Ni/Cu solar cells
Grübel, B.; Büchler, A.; Kluska, S.; Bartsch, J.; Cimiotti, G.; Brand, A.A.; Glatthaar, M.
Konferenzbeitrag
2017Irradiation of radiation-tolerant single-mode optical fibers at cryogenic temperature
Blanc, Jeremy; Ricci, Daniel; Kuhnhenn, Jochen; Weinand, Udo; Schumann, Olaf
Zeitschriftenaufsatz
2017P-175: Direct electron beam micropatterning and thermal annealing of organic light emitting devices
Bodenstein, Elisabeth; Saager, Stefan; Metzner, Mario; Hoffmann, Marie; Hild, Olaf-Rüdiger; Metzner, Christoph; Vogel, Uwe
Zeitschriftenaufsatz
2016Modeling the post-implantation annealing of platinum
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Konferenzbeitrag
2015Diffusion and segregation model for the annealing of silicon solar cells implanted with phosphorus
Wolf, F. Alexander; Martinez-Limia, Alberto; Grote, Daniela; Stichtenoth, Daniel; Pichler, Peter
Zeitschriftenaufsatz
2014Interdigitated back contact silicon solar cells with tunnel oxide passivated contacts formed by ion implantation
Reichel, C.; Feldmann, F.; Müller, R.; Moldovan, A.; Hermle, M.; Glunz, S.W.
Konferenzbeitrag
2014Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3
Richter, A.; Benick, J.; Hermle, M.; Glunz, S.W.
Zeitschriftenaufsatz
2013Implantation studies on silicon-doped GaN
Simon, R.; Vianden, R.; Köhler, K.
Zeitschriftenaufsatz
2013Stability and annealing of alucones and alucone alloys
Ghazaryan, Lilit; Kley, Ernst-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana Viorica
Zeitschriftenaufsatz
2013Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping
Weinreich, W.; Wilde, L.; Müller, J.; Sundqvist, J.; Erben, E.; Heitmann, J.; Lemberger, M.; Bauer, A.J.
Zeitschriftenaufsatz
2012Precipitation of antimony implanted into silicon
Koffel, S.; Pichler, P.; Reading, M.A.; Berg, J. van den; Kheyrandish, H.; Hamm, S.; Lerch, W.; Pakfar, A.; Tavernier, C.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Annealing effects on titania doped zinc oxide (ZNO:TI) and gallium doped zinc oxide (ZnO:GA) thin films prepared by DC-magnetron sputtering
Heimke, B.; Hartung, U.; Kopte, T.
Konferenzbeitrag
2011Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Germanium substrate loss during thermal processing
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz, Konferenzbeitrag
2010DLC/Si multilayer mirrors for EUV radiation
Gawlitza, P.; Braun, S.; Leson, A.; Soer, W.; Jak, M.; Banine, V.
Konferenzbeitrag
2010Effects of oxygen and forming gas annealing on ZnO-TFTs
Huang, J.; Krishna, U.R.; Lemberger, M.; Jank, M.P.M.; Polster, S.; Ryssel, H.; Frey, L.
Poster
2010High radiation sensitivity of chiral long period gratings
Henschel, H.; Höffgen, S.K.; Kuhnhenn, J.; Weinand, U.
Zeitschriftenaufsatz
2010On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2010Zum Stand der virtuellen Werkstoffentwicklung: Vom Halbzeug zum Crash
Springub, B.; Masimov, M.; Butz, A.; Feucht, M.; Lossau, S.; Neukamm, F.; Roll, K.; Haufe, A.; Roters, F.; Schwarzer, R.; Wagener, C.
Konferenzbeitrag
2009Radiation sensitivity of Bragg gratings written with femtosecond IR lasers
Grobnic, D.; Henschel, H.; Höffgen, S.K.; Kuhnhenn, J.; Mihailov, S.J.; Weinand, U.
Konferenzbeitrag
2008CMOS-compatible field effect nanoscale gas-sensor: Operation and annealing models
Velasco-Velez, J.J.; Doll, T.; Chaiyboun, A.; Wilbertz, C.; Wöllenstein, J.; Bauersfeld, M.-L.
Konferenzbeitrag
2005Preparation and characterization of multilayers for EUV applications
Foltyn, T.; Braun, S.; Friedrich, W.; Leson, A.; Menzel, M.
Konferenzbeitrag
2005Properties of ITO on PET film in dependence on the coating conditions and thermal processing
Boehme, M.; Charton, C.
Zeitschriftenaufsatz
2003Metastable behavior of anion-site donors in InAs
Risse, M.; Vianden, R.
Zeitschriftenaufsatz
2003Structure and properties of high-temperature annealed CVD diamond
Ralchenko, V.; Nistor, L.; Pleuler, E.; Khomich, A.; Vlasov, I.; Khmelnitskii, R.
Konferenzbeitrag, Zeitschriftenaufsatz
2002Low-temperature-grown 1.55 mu m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response
Kuenzel, H.; Biermann, K.; Boettcher, J.; Harde, P.; Kurtzweg, M.; Schneider, R.; Neumann, W.; Nickel, D.; Reimann, K.; Woerner, M.; Elsaesser, T.
Konferenzbeitrag
2000Radiation effects in ultraviolet sensitive SiC photodiodes
Metzger, S.; Henschel, H.; Köhn, O.; Lennartz, W.
Konferenzbeitrag
1999Partial pressure of phosphorus and arsenic vapor measured by raman scattering
Roth, K.; Kortus, J.; Herms, M.; Porezag, D.; Pederson, M.
Zeitschriftenaufsatz
1998Glass transition temperature and thermal expansion behaviour of polymer films investigated by variable temperature spectroscopic ellipsometry
Kahle, O.; Wielsch, U.; Metzner, H.; Bauer, J.; Uhlig, C.; Zawatzki, C.
Konferenzbeitrag
1997Titanium monophosphide (TiP) layers as potential diffusion barriers
Leutenecker, R.; Fröschle, B.; Ramm, P.
Konferenzbeitrag
1997Titanium monophosphide (TiP) layers as potential diffusion barriers
Leutenecker, R.; Fröschle, B.; Ramm, P.
Konferenzbeitrag
1996Characterization of microstructure of plastically deformed and and thermally treated carbon steel by means of positron annihilation life-time spectroscopy in comparison with micromagnetic methods
Meyendorf, N.; Somieski, B.; Krause, R.; Altpeter, I.; Gessner, M.
Konferenzbeitrag
1995Influence of annealing on elastic properties of LPCVD silicon nitride and LPCVD polysilicon
Maier-Schneider, D.; Ersoy, A.; Maibach, J.; Schneider, D.; Obermeier, E.
Zeitschriftenaufsatz
1993A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors
Stareev, G.; Kunzel, H.; Dortmann, G.
Zeitschriftenaufsatz
1993Electronic study of plasma-induced damage in GaAs heterostructures.
Zappe, H.P.
Zeitschriftenaufsatz
1993Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p-GaAs
Stareev, G.
Zeitschriftenaufsatz
1993Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1993Tunneling behavior of extremely low resistance nonalloyed Ti/Pt/Au contacts to n(p)-InGaAs and n-InAs/InGaAs
Stareev, G.; Kunzel, H.
Zeitschriftenaufsatz
1992Surface treatment techniques by laser beam machining
Heuvelman, C.J.; König, W.; Tönshoff, H.K.; Meijer, J.; Kirner, P.K.; Rund, M.; Schneider, M.F.; Sprang, I. van
Tagungsband
1991MBE overgrowth of implanted regions in InP:Fe substrates
Kunzel, H.; Gibis, R.; Schlaak, W.; Su, L.M.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
1988Arsenic ion implantation in Hg1-XCdXTe.
Baars, J.; Seelewind, H.; Kaiser, U.; Ziegler, J.; Fritzsche, C.
Zeitschriftenaufsatz
1988Time-resolved thermal annealing of interface traps in aluminium gate-silicon oxide-silicon devices
Burte, E.P.; Matthies, P.
Zeitschriftenaufsatz
1984Dynamic behaviour of thermomechanically treated ultra high strength steel under tensile and compressive loading
Meyer, L.W.
Konferenzbeitrag
1981Annealing of boron-implanted silicon using a CW CO2-laser.
Tsien, P.H.; Tsou, S.C.; Takai, M.; Roeschenthaler, D.; Ramin, M.; Ryssel, H.; Ruge, I.; Wittmaack, K.
Zeitschriftenaufsatz
1981Nd-YAG laser annealing of gallium-implanted silicon.
Takai, M.; Tsou, S.C.; Tsien, P.H.; Roeschenthaler, D.; Ryssel, H.
Zeitschriftenaufsatz