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| 2018 | Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger | Zeitschriftenaufsatz |
| 2016 | Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs
Unger, C.; Mocanu, M.; Pfost, M.; Waltereit, P.; Reiner, R. | Konferenzbeitrag |
| 2015 | Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology
Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Watt-level non-uniform distributed 6-37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology
Dennler, P.; Quay, R.; Brueckner, P.; Schlechtweg, M.; Ambacher, O. | Konferenzbeitrag |
| 2013 | Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology
Dennler, P.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2012 | 8-42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
Dennler, P.; Schwantuschke, D.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2012 | AlGaN/GaN power amplifiers for ISM applications
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2012 | High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10(5) hours
Waltereit, P.; Kühn, J.; Quay, R.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Lätti, J.; Rostewitz, M.; Hirche, K.; Däubler, J. | Konferenzbeitrag |
| 2011 | Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications
Dennler, P.; Raay, F. van; Seelmann-Eggebert, M.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2010 | Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2010 | GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
Sledzik, H.; Reber, R.; Bunz, B.; Schuh, P.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Quay, R. | Konferenzbeitrag |
| 2010 | GaN-based amplifiers for wideband applications
Schuh, P.; Sledzik, H.; Reber, R.; Widmer, K.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Kiefer, R. | Zeitschriftenaufsatz |
| 2010 | High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2010 | Nanosensors for label-free measurement of sodium ion fluxes of neuronal cells
Gebinoga, M.; Silveira, L.; Cimalla, I.; Dumitrescu, A.; Kittler, M.; Lübbers, B.; Becker, A.; Lebedev, V.; Schober, A. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2010 | A novel bio-functionalization of AlGaN/GaN-ISFETs for DNA-sensors
Linkohr, S.; Schwarz, S.; Krischok, S.; Lorenz, P.; Cimalla, V.; Nebel, C.E.; Ambacher, O. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2010 | Piezoelectric actuated epitaxially grown AlGaN/GaN-resonators
Niebelschütz, F.; Brueckner, K.; Tonisch, K.; Stephan, R.; Cimalla, V.; Ambacher, O.; Hein, M.A. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2010 | Search for a suitable ohmic metallization scheme to GaN/AlGaN heterostructures for sub-micron devices
Kolaklieva, L.; Kakanakov, R.; Chitanov, V.; Dulgerova, P.; Cimalla, V. | Konferenzbeitrag |
| 2009 | Resonant piezoelectric ALGAN/GAN mems sensors in longitudinal mode operation
Brueckner, K.; Niebelschütz, F.; Tonisch, K.; Stephan, R.; Cimalla, V.; Ambacher, O.; Hein, M.A. | Konferenzbeitrag |
| 2009 | X-band T/R-module front-end based on GaN MMICs
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M. | Zeitschriftenaufsatz |
| 2008 | Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T. | Konferenzbeitrag |
| 2008 | GaN MMIC based T/R-module front-end for X-band applications
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M. | Konferenzbeitrag |
| 2008 | Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors
Aidam, R.; Kirste, L.; Kunzer, M.; Müller, S.; Waltereit, P. | Zeitschriftenaufsatz |
| 2008 | Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
Brueckner, K.; Niebelschütz, F.; Tonisch, K.; Michael, S.; Dadgar, A.; Krost, A.; Cimalla, V.; Ambacher, O.; Stephan, R.; Hein, M.A. | Zeitschriftenaufsatz |
| 2007 | GaN HEMT: Trends in civil and military circuit applications
Quay, R.; Raay, F. van; Tessmann, A.; Kiefer, R.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Konferenzbeitrag |
| 2006 | 20W GaN HPAs for next generation X-band T/R-modules
Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Behtash, R.; Leier, H.; Quay, R.; Kiefer, R. | Konferenzbeitrag |
| 2002 | AlGaN/GaN HEMTs: Device aspects for a process technology at K-Band
Raay, F. van | Konferenzbeitrag |