Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2010Advanced processing techniques used for the development of dual-junction monolithic interconnected modules
Helmers, H.; Oliva, E.; Bronner, W.; Dimroth, F.; Bett, A.W.
2010MOVPE growth of III-V solar cells on silicon in 300 mm closed coupled showerhead reactor
Roesener, T.; Döscher, H.; Beyer, A.; Brückner, S.; Klinger, V.; Wekkeli, A.; Kleinschmidt, P.; Jurecka, C.; Ohlmann, J.; Volz, K.; Stolz, W.; Hannappel, T.; Bett, A.W.; Dimroth, F.
2008Doping electrical properties and solar cell application of GaInNAs
Volz, K.; Stolz, W.; Teubert, J.; Klar, P.J.; Heimbrodt, W.; Dimroth, F.; Baur, C.; Bett, A.W.
Aufsatz in Buch
2008Misfit dislocation blocking by dilute nitride intermediate layers
Schöne, J.; Spiecker, E.; Dimroth, F.; Bett, A.W.; Jäger, W.
2008Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications
Volz, K.; Lackner, D.; Nemeth, I.; Kunert, B.; Stolz, W.; Baur, C.; Dimroth, F.; Bett, A.W.
2007Material development for improved 1 eV (Galn)(NAs) solar cell structures
Volz, K.; Torunski, T.; Lackner, D.; Rubel, O.; Stolz, W.; Baur, C.; Müller, S.; Dimroth, F.; Bett, A.W.
2005Growth and structural characterization of GaInAsSb films on GaSb substrates
Amariei, A.; Polychroniadis, E.K.; Dimroth, F.; Bett, A.W.
2005Metamorphic GaInP-GalnAs layers for photovoltaic applications
Bett, A.W.; Baur, C.; Dimroth, F.; Schöne, J.
2004Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
Storgards, J.; Méndez, B.; Piqueras, J.; Chenot, M.; Dimroth, F.; Bett, A.W.
2004Comparison of dilute nitride growth on a single- and 8×4-inch multiwafer MOVPE system for solar cell applications
Dimroth, F.; Baur, C.; Bett, A.W.; Volz, K.; Stolz, W.
2004Optimized 9×2-inch MOVPE reactor for the growth of Al-containing antimonides
Dimroth, F.; Bett, A.W.; Giesen, C.; Heuken, M.
2004RBS analysis of AlGaSb thin films
Barradas, N.P.; Alves, E.; Ruiz, C.M.; Dieguez, E.; Dimroth, F.; Chenot, M.-A.; Bett, A.
Konferenzbeitrag, Zeitschriftenaufsatz
2003Correlation of reduced oxygen content in precursors with improved MOVPE layer quality
Rushworth, S.A.; Smith, L.M.; Ravetz, M.S.; Coward, K.M.; Odedra, R.; Kanjolia, R.; Bland, S.W.; Dimroth, F.; Bett, A.W.
2003Growth of Sb-based materials by MOVPE
Dimroth, F.; Agert, C.; Bett, A.W.
Zeitschriftenaufsatz, Konferenzbeitrag
2002Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs
Dimroth, F.; Howard, A.; Shurtleff, J.K.; Stringfellow, G.B.
2002Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
Agert, C.; Gladkov, P.S.; Bett, A.W.
2001High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs and low temperatures and low V/III-ratios
Agert, C.; Dimroth, F.; Schubert, U.; Bett, A.W.; Leu, S.; Stolz, W.
2001MOVPE of GaSb, (AlGa)Sb and (AlGa)(AsSb) in a multiwafer planetary reactor
Agert, C.; Lanyi, P.; Bett, A.W.
2000Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor
Agert, C.; Lanyi, P.; Sulima, O.V.; Stolz, W.; Bett, A.W.
2000High C-doping of MOVPE grown thin Al(x)Ga(1-x)As layers for AlGaAs/GaAs interband tunneling devices
Dimroth, F.; Schubert, U.; Bett, A.W.; Schienle, F.
2000Liquid-phase epitaxy of low-bandgap III-V antimonides for thermophotovoltaic devices
Mauk, M.G.; Shellenbarger, Z.A.; Cox, J.A.; Sulima, O.V.; Bett, A.W.; Müller, R.L.; Sims, P.E.; Mc Neely, J.B.; Netta, L.C. di
2000Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices
Smith, L.M.; Rushworth, S.A.; Ravetz, M.S.; Odedra, R.; Konjolia, R.; Agert, C.; Dimroth, F.; Schubert, U.; Bett, A.W.
1995Etchback-regrowth process for AlGaAs/GaAs solar cell structures
Baldus, A.; Blieske, U.; Sulima, O.; Wettling, W.; Bett, A.W.
1995Investigations of GaAs growth from Bi-based melts of solar cells
Baldus, A.; Sulima, O.; Wettling, W.; Bett, A.W.