Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020Failure analysis of normally-off GaN HEMTs under avalanche conditions
Martinez, P.J.; Letz, S.; Maset, E.; Zhao, D.
Journal Article
2016Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O.
Conference Paper
2011Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors
Walther, S.; Polster, S.; Meyer, B.; Jank, M.; Ryssel, H.; Frey, L.
Journal Article, Conference Paper
2010Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O.
Journal Article
2010Resonant field emission from two-dimensional density of state on hydrogen-terminated intrinsic diamond
Yamada, T.; Shikata, S.-i.; Nebel, C.E.
Journal Article
2009Wide band gap based MEMS for harsh environment applications
Cimalla, V.; Lebedev, V.; Röhlig, C.-C.; Ambacher, O.; Niebelschütz, F.; Tonisch, K.; Pezoldt, J.; Brueckner, K.; Hein, M.
Conference Paper
2008Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors
Shokhovets, S.; Ambacher, O.; Meyer, B.K.; Gobsch, G.
Journal Article
2005Funktionskeramiken
Reschke, S.
Journal Article
1999Reliability of metal-oxide-semiconductor capacitors on pH-silicon carbide
Treu, M.; Schorner, R.; Friedrichs, P.; Rupp, R.; Wiedenhofer, A.
Conference Paper