Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2007Improved emission wavelength reproducibility of InP-based all MOVPE grown 1.55 micrometer quantum dot lasers
Franke, D.; Harde, P.; Böttcher, J.; Möhrle, M.; Sigmund, A.; Künzel, H.
Conference Paper
2002MOVPE-based in-situ etching of InP epitaxial heterostructures
Wolfram, P.; Franke, D.; Ebert, W.; Grote, N.
Conference Paper
2000MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride
Wolfram, P.; Ebert, W.; Kreissl, J.; Grote, N.
Conference Paper, Journal Article
2000Optimizing Fe-doped semi-insulating optical waveguide layers: Detection of interface layer conduction
Bach, H.-G.; Ebert, W.; Umbach, A.; Schramm, C.; Hubsch, R.; Seeger, A.
Conference Paper
1999Monolithic integration of III-V microcavity LEDs on silicon drivers using conformal epitaxy
Gerard, B.; Marcadet, X.; Etienne, P.; Pribat, D.; Friedrich, D.; Eichholz, J.; Bernt, H.; Carlin, J.-F.; Ilegems, M.
Conference Paper
1998Narrow-band photoreceiver OEIC on InP operating at 38 GHz
Engel, T.; Strittmatter, A.; Passenberg, W.; Umbach, A.; Schlaak, W.; Droge, E.; Seeger, A.; Steingrüber, R.; Mekonnen, G.C.; Unterborsch, G.; Bach, H.-G.; Bottcher, E.H.; Bimberg, D.
Journal Article
1998Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N.
Conference Paper, Journal Article
1997Evaluation of defect densities on LP-MOVPE grown InGaAsP in dependence of InP substrate type
Franke, D.; Grote, N.
Conference Paper
1997High-frequency behavior of waveguide integrated photodiodes monolithically integrated on InP using optical butt coupling
Umbach, A.; Leone, A.M.; Unterborsch, G.
Journal Article
1997Highly reproducible and defect-free MOVPE overgrowth of InGaAsP-based DFB gratings
Franke, D.; Roehle, H.
Conference Paper, Journal Article
1997Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere
Roehle, H.; Schroeter-Janssen, H.; Kaiser, R.
Conference Paper, Journal Article
1997LP-MOVPE growth of laser structures using nitrogen carrier gas
Roehle, H.; Schroeter-Janssen, H.
Conference Paper
1997MOVPE growth of a polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier MQW waveguide structure
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Morl, L.; Weinert, C.M.
Conference Paper
1996Fabrication of a heterodyne receiver OEIC with optimized integration process using three MOVPE growth steps only
Hamacher, M.; Trommer, D.; Li, K.; Schroeter-Janssen, H.; Rehbein, W.; Heidrich, H.
Journal Article
1996Full-duplex transceiver-PIC fabricated by using three MOVPE growth steps
Hamacher, M.; Trommer, D.; Heidrich, H.
Conference Paper
1996Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures
Reier, F.W.; Bornholdt, C.; Hoffmann, D.; Kappe, F.; Mörl, L.
Conference Paper
1996LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas
Roehle, H.; Schroeter-Janssen, H.
Conference Paper
1995High bandwidth heterodyne receiver OEIC, fabricated with a three stage MOVPE
Hamacher, M.; Trommer, D.; Li, K.; Schroeter-Janssen, H.; Rehbein, W.; Heidrich, H.
Conference Paper
1995On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP
Roehle, H.; Schroeter-Janssen, H.; Harde, P.; Franke, D.
Conference Paper
1994Doping characteristics of undoped and Zn-doped In(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy
Reier, F.W.; Jahn, E.; Agrawal, N.; Harde, P.; Grote, N.
Journal Article
1994Integration of tunable DBR-lasers with waveguides for heterodyne receiver OEIC applications using selective area MOVPE
Kaiser, R.; Fidorra, F.; Heidrich, H.; Albrecht, P.; Rehbein, W.; Malchow, S.; Schroeter-Janssen, H.; Franke, D.; Sztefka, G.
Conference Paper
1993Electroabsorption and saturation behavior of InGaAsP/InP/InAlAs multiple superlattice electron transfer optical modulator structures
Agrawal, N.; Reier, F.W.; Bornholdt, C.; Weinert, C.M.; Li, K.C.; Harde, P.; Langenhorst, R.; Grosskopf, G.; Berger, L.; Wegener, M.
Journal Article
1993Highly abrupt modulation Zn doping in LP-MOVPE grown InAlAs as applied to quantum well electron transfer structures for optical switching
Reier, F.W.; Agrawal, N.; Harde, P.; Bochnia, R.
Conference Paper
1992Electro-optic modulation by electron transfer in multiple InGaAsP/InP barrier, reservoir, and quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.
Journal Article
1992Fundamental characteristics of InGaAs/InGaAsP-MQW-SCH-lasers emitting in 1.3 mu m wavelength range
Möhrle, M.; Rosenzweig, M.; Düser, H.; Grützmacher, D.
Journal Article
1992MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices
Agrawal, N.; Franke, D.; Grote, N.; Reier, F.W.; Schroeter-Janssen, H.
Conference Paper, Journal Article
1991Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.; Clemens, U.; Witt, A.; Wegener, M.
Conference Paper
1991Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE
Rosenzweig, M.; Ebert, W.; Franke, D.; Grote, N.; Sartorius, B.; Wolfram, P.
Conference Paper, Journal Article
1991LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (lambda g < 1.2 mu m) for optical waveguide applications
Reier, F.W.; Harde, P.; Kaiser, H.
Conference Paper, Journal Article
1991Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure
Paraskevopoulos, A.; Weber, R.; Harde, P.; Schroeter-Janssen, H.
Conference Paper, Journal Article
1990Doping and diffusion behaviour of Fe in MOVPE grown InP layers
Franke, D.; Harde, P.; Wolfram, P.; Grote, N.
Journal Article
1990Secondary ion mass spectroscopic investigation of GaInAsP/InP laser structures made by metalorganic vapor phase epitaxy regrowth
Harde, P.; Fidorra, F.; Venghaus, H.
Journal Article
1989Gas phase depletion in horizontal MOCVD reactors.
Neumann, G.; Winkler, K.; Bachem, K.H.
Conference Paper
1989Orientation-dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structures
Fidorra, F.; Harde, P.; Venghaus, H.; Grutzmacher, D.
Journal Article
1989Very high purity InP layers grown by adduct-MOVPE
Wolfram, P.; Reier, F.W.; Franke, D.; Schumann, H.
Journal Article
1988A novel organo-lithium based production method for trimethylindium
Reier, F.W.; Wolfram, P.; Schumann, H.
Conference Paper, Journal Article