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| 2000 | MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride
Wolfram, P.; Ebert, W.; Kreissl, J.; Grote, N. | Conference Paper, Journal Article |
| 1998 | Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy
Petrik, P.; Biro, L.P.; Fried, M.; Lohner, T.; Berger, R.; Schneider, C.; Gyulai, J.; Ryssel, H. | Journal Article |
| 1996 | Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W. | Conference Paper |
| 1993 | Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H. | Conference Paper, Journal Article |
| 1993 | Vectorial simulation of passive TE/TM mode converter devices on InP
Weinert, C.M.; Heidrich, H. | Journal Article |
| 1992 | Coherent receiver front-end module including a polarization diversity waveguide OIC and a high-speed InGaAs twin-dual p-i-n photodiode OEIC both based on InP
Hamacher, M.; Heidrich, H.; Kruger, U.; Stenzel, R.; Bauer, J.G.; Albrecht, H. | Journal Article |
| 1992 | Key components for optical broadband communication based in InP
Preier, H.; Doldissen, W.; Venghaus, H. | Journal Article |
| 1992 | Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy
Kunzel, H.; Bottcher, J.; Gibis, R.; Urmann, G. | Journal Article |
| 1991 | The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layers
Sartorius, B.; Reier, F.; Wolfram, P. | Conference Paper, Journal Article |
| 1991 | MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers
Passenberg, W.; Bach, H.G.; Bottcher, J. | Conference Paper |
| 1991 | Optimization and calibration of two-wavelength transmission for absolute thickness measurements of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M. | Conference Paper |
| 1991 | Recent advances in dry etching processes for InP-based materials
Niggebrugge, U. | Conference Paper |
| 1991 | RF and noise characterization of a monolithically integrated receiver on InP
Feiste, U.; Kaiser, R.; Mekonnen, G.G.; Schramm, C.; Trommer, D.; Unterborsch, G. | Conference Paper |
| 1991 | Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure
Paraskevopoulos, A.; Weber, R.; Harde, P.; Schroeter-Janssen, H. | Conference Paper, Journal Article |
| 1990 | Characteristics of 1.5 µm InGaAs/InGaAsP MQW lasers
Duser, H.; Fidorra, F.; Franke, D.; Mohrle, M.; Rosenzweig, M.; Wolfram, P.; Grutzmacher, D. | Conference Paper |
| 1990 | Control of a reactive ion etching process for InP and related materials by in-situ ellipsometry in the near infrared
Muller, R. | Conference Paper |
| 1990 | The development of a polarization-diversity heterodyne receiver-waveguide switch on InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.P.; Schlak, M.; Weinert, C.M. | Conference Paper |
| 1990 | Dry chemical etching processes for the production of InP-based components
Niggebrugge, U.; Muller, R. | Conference Paper |
| 1990 | Hydrogen passivation of Zn acceptors in InGaAs during reactive ion etching
Moehrie, M. | Journal Article |
| 1990 | WDM components on the basis of InGaAsP/InP directional couplers
Bornholdt, C.; Kappe, F.; Nolting, H.P.; Stenzel, R.; Venghaus, H.; Weinert, C.M. | Conference Paper |
| 1989 | Butt coupled photodiodes integrated with Y-branched optical waveguides on InP
Doldissen, W.; Fiedler, F.; Kaiser, R.; Morl, L. | Journal Article |
| 1989 | Implanted-collector InGaAsP/InP heterojunction bipolar transistor
Su, L.M.; Grote, N.; Schumacher, P.; Franke, D. | Conference Paper |
| 1989 | Two-dimensional simulation methods (integrated optics)
Nolting, H.-P.; Weinert, C.M. | Journal Article |
| 1989 | Wideband bipolar multiplier IC with high dynamic range for use in coherent optical receivers
Fluge, M.; Frederiksen, P.T.; Enning, B.; Walf, G.; Weber, H.G.; Rein, H.M. | Journal Article |
| 1988 | A comparative study on protection methods against InP substrate decomposition in liquid phase epitaxy
Pfanner, K.; Franke, D.; Sartorius, B.; Schlak, M. | Journal Article |
| 1988 | Thermal degradation effects in InP
Sartorius, B.; Schlak, M.; Rosenzweig, M.; Parschke, K. | Journal Article |
| 1987 | Current-injection analysis of invertible InGaAsP/InP double-heterostructure bipolar transistors
Bach, H.G.; Grote, N.; Fiedler, F. | Conference Paper |
| 1986 | Monolithic IO-technology-modulators and switches based on InP
Schlachetzki, A. | Conference Paper |
| 1985 | NpnN double-heterojunction bipolar transistor on InGaAsP/InP
Su, L.M.; Grote, N.; Kaumanns, R.; Schroeter, H. | Journal Article |