Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2014Improved AlGaN p-i-n photodetectors for monitoring of ultraviolet radiation
Albrecht, B.; Kopta, S.; John, O.; Rütters, Martin; Kunzer, M.; Driad, R.; Marenco, N.; Köhler, K.; Walther, M.; Ambacher, O.
Journal Article
2010Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O.
Journal Article
2002MOVPE-based in-situ etching of InP epitaxial heterostructures
Wolfram, P.; Franke, D.; Ebert, W.; Grote, N.
Conference Paper
20011300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
Kovshb, A.R.; Maleev, N.A.; Sakharov, A.V.; Moeller, C.; Krestnikov, I.L.; Kovsh, A.R.; Mikhrin, S.S.; Zhukov, A.E.; Ustinov, V.M.; Passenberg, W.; Pawlowski, E.; Kuenzel, H.; Tsatsul'nikov, A.F.; Ledentsov, N.N.; Bimberg, D.; Alferov, Z.I.
Journal Article, Conference Paper
2001Status of InP-based metal organic MBE with reference to conventional MBE and MOVPE
Kunzel, H.; Gibis, R.; Kaiser, R.; Malchow, S.; Schelhase, S.
Conference Paper
2000Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas
Schroeter-Janssen, H.; Roehle, H.; Franke, D.; Bochnia, R.; Harde, P.; Grote, N.
Conference Paper, Journal Article
2000MOMBE selective infill growth of InP/GaInAs for quantum dot formation
Gibis, R.; Schelhase, S.; Steingrüber, R.; Urmann, G.; Kunzel, H.; Thiel, S.; Stier, O.; Bimberg, D.
Conference Paper, Journal Article
2000MOMBE: Superior epitaxial growth for InP-based monolithically integrated photonic circuits
Gibis, R.; Kizuki, H.; Albrecht, P.; Harde, P.; Urmann, G.; Kaiser, R.; Kunzel, H.
Conference Paper, Journal Article
1999Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP
Biermann, K.; Hase, A.; Kunzel, H.
Conference Paper, Journal Article
1998Laser/waveguide integration utilizing selective area MOMBE regrowth for photonic IC applications
Kunzel, H.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1998MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs
Kuenzel, H.; Gibis, R.; Kizuki, H.; Albrecht, P.; Ebert, S.; Harde, P.; Malchow, S.; Kaiser, R.
Conference Paper, Journal Article
1998Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N.
Conference Paper, Journal Article
1998Selective infill metalorganic molecular beam epitaxy of InP:Si n+/n- layers for buried collector double heterostructure bipolar transistors
Schelhase, S.; Bottcher, J.; Gibis, R.; Harde, P.; Paraskevopoulos, A.; Kunzel, H.
Journal Article
1998Selective MOMBE growth of InP-based waveguide/laser butt-joints
Kuenzel, H.; Ebert, S.; Gibis, R.; Kaiser, R.; Kizuki, H.; Malchow, S.; Urmann, G.
Journal Article
1997Barrier composition dependence of the emission properties of AlGaInAs/GaInAs quantum wells grown by molecular beam epitaxy
Hase, A.; Chew-Walter, A.; Kuenzel, H.
Journal Article
1997Evaluation of defect densities on LP-MOVPE grown InGaAsP in dependence of InP substrate type
Franke, D.; Grote, N.
Conference Paper
1997Highly reproducible and defect-free MOVPE overgrowth of InGaAsP-based DFB gratings
Franke, D.; Roehle, H.
Conference Paper, Journal Article
1997Investigation of Be-distribution profiles in MBE-grown GaInAs for optimization of HBT base structures
Passenberg, W.; Harde, P.; Paraskevopoulos, A.
Conference Paper
1997Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere
Roehle, H.; Schroeter-Janssen, H.; Kaiser, R.
Conference Paper, Journal Article
1997MBE regrowth on AlGaInAs DFB gratings using in-situ hydrogen radical cleaning
Kuenzel, H.; Boettcher, J.; Hase, A.; Hensel, H.-J.; Janiak, K.; Urmann, G.; Paraskevopoulos, A.
Conference Paper, Journal Article
1997Surface preparation for molecular beam epitaxy-regrowth on metalorganic vapour phase epitaxy grown InP and InGaAsP layers
Passenberg, W.; Schlaak, W.
Journal Article
1996Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP
Schramm, C.; Schlaak, W.; Mekonnen, G.G.; Passenberg, W.; Umbach, A.; Seeger, A.; Wolfram, P.; Bach, H.-G.
Journal Article
1996MOMBE growth of high quality GaInAsP (lambda g=1.05 mu m) for waveguide applications
Kuenzel, H.; Albrecht, P.; Gibis, R.; Hamacher, M.; Schelhase, S.
Conference Paper, Journal Article
1996MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth
Schelhase, S.; Boettcher, J.; Gibis, R.; Kuenzel, H.; Paraskevopoulos, A.
Conference Paper, Journal Article
1996Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth
Umbach, A.; Waasen, S. van; Auer, U.; Bach, H.-G.; Bertenburg, R.M.; Breuer, V.; Ebert, W.; Janssen, G.; Mekonnen, G.G.; Passenberg, W.; Schlaak, W.; Schramm, C.; Seeger, A.; Tegude, F.-J.; Unterborsch, G.
Journal Article
1995On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP
Roehle, H.; Schroeter-Janssen, H.; Harde, P.; Franke, D.
Conference Paper
1994Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
Hase, A.; Kunzel, H.; Zahn, D.R.T.; Richter, W.
Journal Article
1994Doping characteristics of undoped and Zn-doped In(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy
Reier, F.W.; Jahn, E.; Agrawal, N.; Harde, P.; Grote, N.
Journal Article
1993A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors
Stareev, G.; Kunzel, H.; Dortmann, G.
Journal Article
1992High resistivity, low loss InGaAlAs/InP optical waveguides grown by low-temperature MBE
Kunzel, H.; Grote, N.; Albrecht, P.; Bottcher, J.; Bornholdt, C.
Conference Paper
1992Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides
Künzel, H.; Grote, N.; Albrecht, P.; Böttcher, J.; Bornholdt, C.
Journal Article
1992Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy
Kunzel, H.; Bottcher, J.; Gibis, R.; Urmann, G.
Journal Article
1991The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layers
Sartorius, B.; Reier, F.; Wolfram, P.
Conference Paper, Journal Article
1991LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (lambda g < 1.2 mu m) for optical waveguide applications
Reier, F.W.; Harde, P.; Kaiser, H.
Conference Paper, Journal Article
1991Molecular beam epitaxy grown Al(Ga)InAs: Schottky contacts and deep levels
Schramm, C.; Bach, H.G.; Kunzel, H.; Praseuth, J.P.
Journal Article
1991Optical thickness mapping of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.; Wolfram, P.; Franke, D.
Journal Article
1991Optimization and calibration of two-wavelength transmission for absolute thickness measurements of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.
Conference Paper
1990Doping and diffusion behaviour of Fe in MOVPE grown InP layers
Franke, D.; Harde, P.; Wolfram, P.; Grote, N.
Journal Article
1990Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Journal Article
1990Nondestructive thickness mapping of epitaxial InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.
Conference Paper
1990Optimization of extremely highly p-doped In0.53Ga0.47As:Be contact layers grown by MBE
Passenberg, W.; Harde, P.; Kunzel, H.; Trommer, D.
Conference Paper
1990Secondary ion mass spectroscopic investigation of GaInAsP/InP laser structures made by metalorganic vapor phase epitaxy regrowth
Harde, P.; Fidorra, F.; Venghaus, H.
Journal Article
1989Assessment of semi-insulating InP:Fe layers for substrate applications
Grote, N.; Bach, H.G.; Feifel, T.; Franke, D.; Harde, P.; Sartorious, B.; Wolfram, P.
Conference Paper
1989Orientation-dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structures
Fidorra, F.; Harde, P.; Venghaus, H.; Grutzmacher, D.
Journal Article
1989Two-dimensional simulation methods (integrated optics)
Nolting, H.-P.; Weinert, C.M.
Journal Article
1989Very high purity InP layers grown by adduct-MOVPE
Wolfram, P.; Reier, F.W.; Franke, D.; Schumann, H.
Journal Article
1987Luminescence microscopy for quality control of material and processing
Satorius, B.; Franke, D.; Schlak, M.
Conference Paper, Journal Article
1985Molecular beam epitaxy of III-V compounds
Kunzel, H.
Conference Paper