Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2010Resonant field emission from two-dimensional density of state on hydrogen-terminated intrinsic diamond
Yamada, T.; Shikata, S.-i.; Nebel, C.E.
Journal Article
2000Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas
Schroeter-Janssen, H.; Roehle, H.; Franke, D.; Bochnia, R.; Harde, P.; Grote, N.
Conference Paper, Journal Article
2000MOMBE: Superior epitaxial growth for InP-based monolithically integrated photonic circuits
Gibis, R.; Kizuki, H.; Albrecht, P.; Harde, P.; Urmann, G.; Kaiser, R.; Kunzel, H.
Conference Paper, Journal Article
1999Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS
Harde, P.; Gibis, R.; Kaiser, R.; Kizuki, H.; Kunzel, H.
Conference Paper, Journal Article
1998Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Journal Article
1998MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs
Kuenzel, H.; Gibis, R.; Kizuki, H.; Albrecht, P.; Ebert, S.; Harde, P.; Malchow, S.; Kaiser, R.
Conference Paper, Journal Article
1998Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N.
Conference Paper, Journal Article
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Conference Paper, Journal Article
1997MOMBE growth of semi-insulating GaInAsP(lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1996LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas
Roehle, H.; Schroeter-Janssen, H.
Conference Paper
1996MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth
Schelhase, S.; Boettcher, J.; Gibis, R.; Kuenzel, H.; Paraskevopoulos, A.
Conference Paper, Journal Article
1995A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1-xAs relaxed layers
Alvarez, A.-L.; Calle, F.; Sacedon, A.; Calleja, E.; Munoz, E.; Wagner, J.; Maier, M.; Mazuelas, A.; Ploog, K.H.
Journal Article
1995Silicon incorporation in GaAs. From delta-doping to monolayer insertion
Wagner, J.; Newman, R.C.; Roberts, C.
Journal Article
1995Tapered InGaAs/GaAs MWQ lasers with carbon modulation-doping and reduced filamentation
Ralston, J.D.; Laughton, F.R.; Chazan, P.; Larkins, E.C.; Maier, M.; Abd Rahman, M.K.; White, I.H.
Journal Article
1994Development of advanced GaInAs/AlInAs delta-doped SQW-HEMT structures
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Hase, A.
Conference Paper
1994Doping characteristics of undoped and Zn-doped In(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy
Reier, F.W.; Jahn, E.; Agrawal, N.; Harde, P.; Grote, N.
Journal Article
1993Highly abrupt modulation Zn doping in LP-MOVPE grown InAlAs as applied to quantum well electron transfer structures for optical switching
Reier, F.W.; Agrawal, N.; Harde, P.; Bochnia, R.
Conference Paper
1993On the potential of delta-doping for AlInAs/GaInAs HEMTs grown by MBE
Passenberg, W.; Bach, H.-G.; Bottcher, J.; Kunzel, H.
Conference Paper, Journal Article
1993Shallow junction formation by dopant outdiffusion from CoSi2 and its application in sub 0.5 mu m MOS processes
Niazmand, M.; Friedrich, D.; Windbracke, W.
Conference Paper
1991MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers
Passenberg, W.; Bach, H.G.; Bottcher, J.
Conference Paper
1991MBE overgrowth of implanted regions in InP:Fe substrates
Kunzel, H.; Gibis, R.; Schlaak, W.; Su, L.M.; Grote, N.
Conference Paper, Journal Article
1990Doping and diffusion behaviour of Fe in MOVPE grown InP layers
Franke, D.; Harde, P.; Wolfram, P.; Grote, N.
Journal Article
1990Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Journal Article
1990Optimization of extremely highly p-doped In0.53Ga0.47As:Be contact layers grown by MBE
Passenberg, W.; Harde, P.; Kunzel, H.; Trommer, D.
Conference Paper
1987Formation of p+(p-)n junctions in InP and their dependence on substrate concentration, time and temperature
Schmitt, F.; Mahnkopfe, M.
Conference Paper, Journal Article
1977Investigation of the production and technical use of InSb single crystals periodically doped by means of the Peltier effect
Nolting, P.
Journal Article