Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2009Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers - a challenge for MBE growth
Manz, C.; Yang, Q.K.; Rattunde, M.; Schulz, N.; Rösener, B.; Kirste, L.; Wagner, J.; Köhler, K.
Journal Article, Conference Paper
2009Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers
Burns, D.; Hopkins, J.-M.; Kemp, A.J.; Rösener, B.; Schulz, N.; Manz, C.; Köhler, K.; Rattunde, M.; Wagner, J.
Conference Paper
2008GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008High-brightness 2.X µm semiconductor lasers
Rattunde, M.; Kelemen, M.T.; Schulz, N.; Pfahler, C.; Manz, C.; Schmitz, J.; Kaufel, G.; Wagner, J.
Conference Paper
2008High-brightness long-wavelength semiconductor disk lasers
Schulz, N.; Hopkins, J.-M.; Rattunde, M.; Burns, D.; Wagner, J.
Journal Article
2008High-power high-brightness operation of a 2.25-mu m (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Journal Article
2008An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers
Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008Thermal management in 2.3-mu m semiconductor disk lasers: A finite element analysis
Kemp, A.J.; Hopkins, J.-M.; Maclean, A.J.; Schulz, N.; Rattunde, M.; Wagner, J.; Burns, D.
Journal Article
2008Two-micron semiconductor disk lasers achieve higher powers
Rattunde, M.; Rösener, B.; Schulz, N.; Manz, C.; Hopkins, J.-M.; Burns, D.; Wagner, J.
Journal Article
2007Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs
Wagner, J.; Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Manz, C.; Wild, C.; Köhler, K.
Journal Article
2007Effect of the cavity resonance-gain offset on the output power characteristics of GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2007High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wörner, E.; Wagner, J.
Conference Paper
2007Pulsed pumping of semiconductor disk lasers
Hempler, N.; Hopkins, J.-M.; Kemp, A.J.; Schulz, N.; Rattunde, M.; Wagner, J.; Dawson, M.D.; Burns, D.
Journal Article
2006GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Conference Paper

 

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