Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
20193-D Modeling of Multicrystalline Silicon Materials and Solar Cells
Sio, Hang Cheong; Fell, Andreas; Phang, Sieu Pheng; Wang, Haitao; Zheng, Peiting; Chen, D.K.; Zhang, Xinyu; Zhang, Tao; Jin, Hao; Macdonald, Daniel
Journal Article
2019Modeling of the impact of the substrate voltage on the capacitances of GaN-on-Si HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Schwantuschke, Dirk; Khandelwal, Sourabh
Journal Article
2019Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
Benedetto, L. di; Matthus, C.D.; Erlbacher, T.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Frey, L.
Conference Paper
2016A model of electric field distribution in gate oxide and JFET-region of 4H-SiC DMOSFETs
Benedetto, Luigi di; Licciardo, Gian D.; Erlbacher, Tobias; Bauer, Anton J.; Liguori, R.; Rubino, Alfredo
Journal Article
2016Optimized design for 4H-SiC power DMOSFETs
Benedetto, Luigi di; Licciardo, Gian D.; Erlbacher, Tobias; Bauer, Anton J.; Rubino, Alfredo
Journal Article
2012Physics-based modeling of GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S.
Journal Article
2012Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration
Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar
Journal Article
2011Hierarchical simulation of process variations and their impact on circuits and systems: Results
Lorenz, J.K.; Bär, E.; Clees, T.; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S.
Journal Article
2006Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors
Kallfass, I.; Schumacher, H.; Brazil, T.J.
Journal Article
2006A unified approach to charge-conservative capacitance modelling in HEMTs
Kallfass, I.; Schumacher, H.; Brazil, T.J.
Journal Article
2001Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S.
Journal Article
2001Optimization of High-Speed SiGe HBTs
Palankovski, V.; Röhrer, G.; Wachmann, E.; Kraft, J.; Löffler, B.; Cervenka, J.; Quay, R.; Grasser, T.; Selberherr, S.
Conference Paper
2001A review of modeling issues for RF heterostructure device simulation
Quay, R.; Schultheis, R.; Kellner, W.; Palankovski, V.; Selberherr, S.
Conference Paper