Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1999Reliability of ultra-thin gate oxides grown in low-pressure N20 ambient or on nitrogen-implanted silicon
Bauer, A.J.; Beichele; Herden, M.; Ryssel, H.
Conference Paper
1999Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS
Harde, P.; Gibis, R.; Kaiser, R.; Kizuki, H.; Kunzel, H.
Conference Paper, Journal Article
1998Laser/waveguide integration utilizing selective area MOMBE regrowth for photonic IC applications
Kunzel, H.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1998Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Journal Article
1998MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs
Kuenzel, H.; Gibis, R.; Kizuki, H.; Albrecht, P.; Ebert, S.; Harde, P.; Malchow, S.; Kaiser, R.
Conference Paper, Journal Article
1998Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N.
Conference Paper, Journal Article
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Conference Paper, Journal Article
1997MOMBE growth of semi-insulating GaInAsP(lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1996Material characterisation of SrS:Ce,Mn,Cl films
Troppenz, U.; Bilger, G.; Bohne, W.; Gers, G.; Kreissl, J.; Mauch, R.-H.; Sieber, K.; Velthaus, K.O.
Conference Paper
1995On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP
Roehle, H.; Schroeter-Janssen, H.; Harde, P.; Franke, D.
Conference Paper
1993In situ SIMS monitoring for ion beam etching of III-V semiconductor compounds and metal contacts
Hensel, H.J.; Paraskevopoulos, A.; Mörl, L.; Hase, A.; Böttcher, J.
Conference Paper
1990Doping and diffusion behaviour of Fe in MOVPE grown InP layers
Franke, D.; Harde, P.; Wolfram, P.; Grote, N.
Journal Article
1990Secondary ion mass spectroscopic investigation of GaInAsP/InP laser structures made by metalorganic vapor phase epitaxy regrowth
Harde, P.; Fidorra, F.; Venghaus, H.
Journal Article
1989Beryllium and manganese diffusion in Ga0.47In0.53As during MBE-growth
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Conference Paper
1989Orientation-dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structures
Fidorra, F.; Harde, P.; Venghaus, H.; Grutzmacher, D.
Journal Article