Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Resistless Ga+ beam lithography for flexible prototyping of nanostructures in different materials by reactive ion etching
Rommel, Mathias; Rumler, Maximilian; Haas, Anke; Beuer, Susanne
2014Enabling large area and high throughput roll-to-roll NIL by novel inkjetable and photo-curable NIL-resists
Thesen, Manuel; Rumler, Maximilian; Schlachter, Florian; Grützner, Susanne; Moormann, Christian; Rommel, Mathias; Nees, Dieter; Ruttloff, Stephan; Pfirrmann, Stefan; Vogler, Marko; Schleunitz, Arne; Grützner, Gabi
Conference Paper
2013Evaluation of UV-SCIL resists for structure transfer using plasma etching
Rumler, Maximilian; Rusch, O.; Fader, Robert; Haas, Anke; Rommel, Mathias; Bauer, Anton J.; Frey, Lothar; Brehm, Markus; Kraft, Andreas
2013Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching
Rommel, M.; Rumler, M.; Haas, A.; Bauer, A.J.; Frey, L.
Journal Article
2007Design and fabrication of micromachined silicon based mid infrared multilenses for gas sensing applications
Fonollosa, J.; Rubio, J.; Hildenbrand, J.; Hartwig, S.; Santander, J.; Moreno, M.; Marco, S.; Fonseca, L.; Wöllenstein, J.
Conference Paper
1998Dielectric micro-filters for locally resolving color sensors
Frank, M.; Schallenberg, U.B.; Kaiser, N.; Buß, W.
Journal Article
1996Investigation of macroscopic uniformity during CH4/H2 reactive ion etching of InP and improvement using a guard ring
Janiak, K.; Niggebrugge, U.
Conference Paper
1995Dry etching of GaN at low pressure
Pletschen, W.; Niebuhr, R.; Bachem, K.H.
Conference Paper
1994Remote coupling over 93 mym using ARROW waveguides in strip configuration
Gehler, J.; Bräuer, A.; Karthe, W.
Journal Article
1993Blazed Fresnel zone lenses approximated by discrete step profiles: Effects of fabrication errors
Ferstl, M.; Kuhlow, B.; Pawlowski, E.
Conference Paper
1991Electrical damage due to low energy plasma processing of GaAs structures
Kaufel, G.; Zappe, H.P.
Conference Paper
1991GaAs/AlGaAs HEMT's with sub 0.5 mym gatelength written by E-beam and recessed by dry-etching for direct-coupled FET logic -DCFL-
Hülsmann, A.; Kaufel, G.; Raynor, B.; Glorer, K.H.; Olander, E.; Weismann, B.; Schneider, J.; Jakobus, T.; Koehler, K.
Conference Paper