Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Raman distributed temperature sensing at CERN
Toccafondo, Iacopo; Nannipieri, Tiziano; Signorini, Alessandro; Guillermain, Elisa; Kuhnhenn, Jochen; Brugger, Markus; Pasquale, Fabrizio di
Journal Article
2011On the Raman threshold for passive large mode area fibers
Jauregui, C.; Limpert, J.; Tünnermann, A.
Conference Paper
2005Power scaling of high-power fiber lasers and amplifiers
Tünnermann, A.; Höfer, S.; Liem, A.; Limpert, J.; Reich, M.; Röser, F.; Schreiber, T.; Zellmer, H.; Peschel, T.; Guyenot, V.
Journal Article
2002Precipitation in low-temperature grown GaAs
Herms, M.; Irmer, G.; Goerigk, G.; Bedel, E.; Claverie, A.
Journal Article
1999Characterization of GaAs(1-x) Bi(x) Epilayers by Raman Scattering and X-ray Diffraction
Herms, M.; Melov, V.G.; Verma, P.; Irmer, G.; Okamoto, H.; Fukuzawa, M.; Oe, K.; Yamada, M.
Conference Paper
1999Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M.
Journal Article
1999Partial pressure of phosphorus and arsenic vapor measured by raman scattering
Roth, K.; Kortus, J.; Herms, M.; Porezag, D.; Pederson, M.
Journal Article
1999Raman scattering observations and ab initio models of dicarbon complexes in AlAS
Davidson, B.R.; Newman, R.C.; Latham, C.D.; Jones, R.; Wagner, J.; Button, C.C.; Briddon, P.R.
Journal Article
1998Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Bachem, K.H.
Journal Article
1997Resonant Raman scattering in GaN/(AlGa)N single quantum wells
Behr, D.; Niebuhr, R.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Journal Article
1997Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Conference Paper
1995Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering
Wagner, J.; Schmitz, J.; Fuchs, F.; Ralston, J.D.; Koidl, P.; Richards, D.
Journal Article
1994Resonance effects in first- and second-order Raman scattering from AlAs
Wagner, J.; Fischer, A.; Braun, W.; Ploog, K.
Journal Article
1994Resonance effects in Raman scattering from InAs/AlSb quantum wells.
Wagner, J.; Schmitz, J.; Ralston, J.D.; Koidl, P.
Journal Article
1993Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs.
Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1993Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scattering.
Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P.; Wagner, J.
Journal Article
1992Excited defect energy states from temperature dependent ESR.
Kisielowski, C.; Maier, K.; Schneider, J.; Oding, V.
Journal Article
1991Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering.
Addinall, R.; Murray, R.; Newman, R.C.; Parker, S.D.; Williams, R.L.; Droopad, R.; Deoliveira, A.G.; Stradling, R.A.; Wagner, J.
Journal Article
1991Raman spectroscopy for impurity characterization in III-V semiconductors.
Wagner, J.
Journal Article
1991Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors.
Newman, R.C.; Koidl, P.; Wagner, J.
Journal Article
1991Resonance effects in Raman scattering from polycrystalline diamond films.
Koidl, P.; Wagner, J.; Wild, C.
Journal Article
1991Stark localization and resonance-induced delocalization of electrons in GaAs/AlAs superlattices.
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J.
Journal Article
1990Implantation effects on resonant raman scattering in CdTe and Cd0.23Hg0.77Te.
Lusson, A.; Bruder, M.; Koidl, P.; Ramsteiner, M.; Wagner, J.
Journal Article
1990Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivity.
Amirtharaj, P.M.; Dhar, N.K.; Baars, J.; Seelewind, H.
Journal Article
1989The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and raman scattering.
Murray, R.; Newman, R.C.; Sangster, M.J.L.; Beall, R.B.; Harris, J.J.; Wright, P.J.; Ramsteiner, M.; Wagner, J.
Journal Article
1989Interference effects in the Raman scattering intensity from thin films.
Ramsteiner, M.; Wagner, J.; Wild, C.
Journal Article
1989Optical spectroscopy of impurity levels in GaAs
Wagner, J.
Journal Article
1989Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy.
Ramsteiner, M.; Wagner, J.
Journal Article
1987Light scattering diagnostics in MOCVD
Richter, W.; Hünermann, L.
Conference Paper