| | |
|---|
| 1997 | Carrier escape time in quantum well lasers: dependence on injection level, doping concentration, and temperature
Romero, B.; Esquivias, I.; Arias, J.; Batko, G.; Weisser, S.; Rosenzweig, J. | Conference Paper |
| 1996 | Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers
Czotscher, K.; Weisser, S.; Larkins, E.C.; Fleissner, J.; Ralston, J.D.; Schönfelder, A.; Rosenzweig, J.; Esquivias, I. | Journal Article |
| 1996 | Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J. | Conference Paper |
| 1994 | DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping
Esquivias, I.; Weisser, S.; Schönfelder, A.; Ralston, J.D.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; Benz, W.; Rosenzweig, J. | Conference Paper |
| 1994 | Differential gain, refractive index, and linewidth enhancement factor in high-speed GaAs-based MQW lasers - influence of strain and p-doping
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1994 | Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents
Weisser, S.; Ralston, J.D.; Eisele, K.; Sah, R.E.; Hornung, J.; Larkins, E.C.; Tasker, P.J.; Benz, W.; Rosenzweig, J.; Bronner, W.; Fleissner, J.; Bender, K. | Conference Paper |
| 1994 | Theoretical investigation of gain enhancements in strained In0.35Ga0.65As/Gas MQW lasers via p-doping.
Schönfelder, A.; Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1993 | 30 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Conference Paper |
| 1993 | Alpha-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1993 | Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J. | Journal Article |
| 1993 | Impedance, modulation response, and equivalent circuit of ultra-high-speed InGaAs/GaAs MQW lasers
Weisser, S.; Tasker, P.J.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J. | Conference Paper |
| 1992 | Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Tasker, P.J.; Rosenzweig, J. | Conference Paper |
| 1992 | Thin-film In-doped V-catalysed SnO2 gas sensors.
Löw, H.; Sulz, G.; Lacher, M.; Kühner, G.; Uptmoor, G.; Reiter, H.; Steiner, K. | Journal Article |
| 1991 | Electrical and optical properties of As and Li doped ZnSe films.
Hingerl, K.; Lilja, J.; Toivonen, M.; Pessa, M.; Jantsch, W.; As, D.J.; Rothemund, W.; Juza, P.; Sitter, H. | Conference Paper |