Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2001Improved performance of 2-mu m GaInAs strained quantum-well lasers on InP by increasing carrier confinement
Serries, D.; Peter, M.; Kiefer, R.; Winkler, K.; Wagner, J.
Journal Article
2000MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride
Wolfram, P.; Ebert, W.; Kreissl, J.; Grote, N.
Journal Article
19994*2.5 Gbit/s, NRZ transmission experiments over crossconnects with opto-electronic frequency converters and dispersion compensated standard single-mode fibre links
Strebel, B.; Caspar, C.; Foisel, H.-M.; Weinert, C.; Molle, L.
Journal Article
1999Measurement and modeling of timing jitter in optoelectronic repeaters and frequency converters
Weinert, C.M.; Molle, L.; Caspar, C.; Strebel, B.
Journal Article
1993Highly abrupt modulation Zn doping in LP-MOVPE grown InAlAs as applied to quantum well electron transfer structures for optical switching
Reier, F.W.; Agrawal, N.; Harde, P.; Bochnia, R.
Conference Paper
1991Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration
Kunzel, H.; Kaiser, R.; Passenberg, W.; Trommer, D.; Unterborsch, G.
Journal Article
1990Requirements of components for future wide-band communications
Baack, C.
Conference Paper
1988Thermal degradation effects in InP
Sartorius, B.; Schlak, M.; Rosenzweig, M.; Parschke, K.
Journal Article
1986An optoelectronic adder
MacDonald, R.I.
Journal Article