Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2010Search for a suitable ohmic metallization scheme to GaN/AlGaN heterostructures for sub-micron devices
Kolaklieva, L.; Kakanakov, R.; Chitanov, V.; Dulgerova, P.; Cimalla, V.
Conference Paper
1998Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N.
Conference Paper, Journal Article
1996Interface formation between deposited Sn and Hg(0,8)Cd(0,2)Te
Zimmermann, H.; Keller, R.C.; Meisen, P.; Richter, H.J.; Seelmann-Eggebert, M.
Journal Article
1994Ohmic contacts to buried n-GaInAs layers for GaInAs/AlInAs-HEMTs
Umbach, A.; Schramm, C.; Bottcher, J.; Unterborsch, G.
Conference Paper
1994Thermally induced failure in GaAs transistors exposed to alpha particle irradiation
Moglestue, C.; Buot, F.; Anderson, W.T.
Conference Paper
1993A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors
Stareev, G.; Kunzel, H.; Dortmann, G.
Journal Article
1993Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p-GaAs
Stareev, G.
Journal Article
1991A reliable fabrication technique for very low resistance ohmic contacts to p-InGaAs using low energy Ar+ ion beam sputtering
Stareev, G.; Umbach, A.; Fidorra, F.; Roehle, H.
Conference Paper
1990Secondary ion mass spectroscopic investigation of GaInAsP/InP laser structures made by metalorganic vapor phase epitaxy regrowth
Harde, P.; Fidorra, F.; Venghaus, H.
Journal Article
1987Simultaneous fabrication of very low resistance ohmic contacts to n-InP and p-InGaAs
Kaumanns, R.; Grote, N.; Bach, H.-G.; Fidorra, F.
Conference Paper