Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar; Chen, Ximing; Zhao, Yanli; Li, Chengzhan; Dai, Xiaoping
Conference Paper
2019Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes
Rusch, Oleg; Moult, Jonathan; Erlbacher, Tobias
Conference Paper
2019Technological advances towards 4H-SiC JBS diodes for wind power applications
Buettner, Jonas; Erlbacher, Tobias; Bauer, Anton
Conference Paper
2018Influence of Al doping concentration and annealing parameters on TiAl based Ohmic contacts on 4H-SiC
Kocher, Matthias; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton J.
Conference Paper
2010Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs
Passow, T.; Gutt, R.; Maier, M.; Pletschen, W.; Kunzer, M.; Schmidt, R.; Wiegert, J.; Luick, D.; Liu, S.; Köhler, K.; Wagner, J.
Conference Paper
2009Composition and interface chemistry dependence in ohmic contacts to GaN HEMT structures on the Ti/Al ratio and annealing conditions
Kolaklieva, L.; Kakanakov, R.; Stefanov, P.; Cimalla, V.; Maroldt, S.; Ambacher, O.; Tonisch, K.; Niebelschütz, F.
Conference Paper, Journal Article
2009Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices
Himmerlich, M.; Koufaki, M.; Ecke, G.; Mauder, C.; Cimalla, V.; Schaefer, J.A.; Kondilis, A.; Pelekanos, N.T.; Modreanu, M.; Krischok, S.; Aperathitis, E.
Journal Article
2006Conduction model of SnO2 thin films based on conductance and Hall effect measurements
Oprea, A.; Moretton, E.; Barsan, N.; Becker, W.J.; Wöllenstein, J.; Weimar, U.
Journal Article
1991An experimental verfication of the Monte Carlo particle model.
Moglestue, C.
Conference Paper