Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan
Conference Paper
2016Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Sepahvand, A.; Maksimovic, D.
Conference Paper
2012Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers
Erlbacher, Tobias; Schwarzmann, Holger; Bauer, Anton J.; Berberich, Sven E.; Dorp, Joachim vom; Frey, Lothar
Conference Paper
2012Monolithic integration of MOEMS on CMOS backplanes using surface micromachining techniques
List, Matthias; Friedrichs, Martin; Müller, Michael
Conference Paper
2012Reliability characterization of dielectrics in 200V trench capacitors
Erlbacher, Tobias; Schwarzmann, Holger; Bauer, Anton J.; Dorp, Joachim vom; Frey, Lothar
Poster
2004A CMOS photodiode array with in-pixel data acquisition system for computed tomography
Steadman, R.; Morales-Serrano, F.; Vogtmeier, G.; Kemna, A.; Özkan, E.; Brockherde, W.; Hosticka, B.J.
Journal Article
2002A biohybrid system to interface peripheral nerves after traumatic lesions: Design of a high channel sieve electrode
Stieglitz, T.; Ruf, H.H.; Gross, M.; Schuettler, M.; Meyer, J.-U.
Journal Article
2001Design of narrow-band photoreceivers by means of the photodiode intrinsic conductance
Leven, A.; Hurm, V.; Reuter, R.; Rosenzweig, J.
Journal Article
2001High-speed, high-power 1.55 mu m photodetectors
Umbach, A.; Trommer, D.; Steingrüber, R.; Seeger, A.; Ebert, W.; Unterborsch, G.
Journal Article
2001Status of InP-based metal organic MBE with reference to conventional MBE and MOVPE
Kunzel, H.; Gibis, R.; Kaiser, R.; Malchow, S.; Schelhase, S.
Conference Paper
2000High-speed, high-responsivity 1.55 mu m photodetector on InP
Umbach, A.; Trommer, D.; Steingrüber, R.; Seeger, A.; Ebert, W.; Unterborsch, G.
Conference Paper
2000Impact of a conducting interface layer on the characteristics of integrated InP photoreceivers
Schramm, C.; Mekonnen, G.G.; Bach, H.-G.; Unterborsch, G.; Schlaak, W.; Ebert, W.; Wolfram, P.
Conference Paper
2000InP photoreceiver OEICs for high-speed optical transmission systems
Mekonnen, G.G.; Schlaak, W.; Bach, H.-G.; Engel, T.; Schramm, C.; Umbach, A.
Conference Paper
2000Integrated differential photoreceiver for 40 Gbit/s systems
Umbach, A.; Unterborsch, G.; Trommer, D.; Schramm, C.; Mekonnen, G.G.; Weiske, C.-J.
Conference Paper
2000Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications
Hamacher, M.; Kaiser, R.; Heidrich, H.; Albrecht, P.; Borchert, B.; Janiak, K.; Löffler, R.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.
Conference Paper
2000Ultrafast, high-power 1.55 mu m side-illuminated photodetector with integrated spot size converter
Umbach, A.; Trommer, D.; Steingrüber, R.; Seeger, A.; Ebert, W.; Unterborsch, G.
Conference Paper
2000Ultrafast, high-power waveguide fed photodetector with integrated spot size converter
Trommer, D.; Schmidt, D.; Umbach, A.; Steingrüber, R.; Ebert, W.; Unterborsch, G.
Conference Paper
199940 Gbit/s photoreceiver modules comprising InP-OEICs for RZ and NRZ coded TDM system applications
Bach, H.-G.; Schlaak, W.; Unterborsch, G.; Mekonnen, G.G.; Jacumeit, G.; Ziegler, R.; Steingrüber, R.; Seeger, A.; Engel, T.; Umbach, A.; Schramm, C.; Passenberg, W.
Conference Paper
1999Applications of SOA's for optical signal processing and OTDM
Ludwig, R.; Diez, S.; Hilliger, E.; Schmidt, C.; Weber, H.G.
Conference Paper
199840 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Conference Paper
199840 Gbit/s 1.55 mu m pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Journal Article
1998Narrow-band photoreceiver OEIC on InP operating at 38 GHz
Engel, T.; Strittmatter, A.; Passenberg, W.; Umbach, A.; Schlaak, W.; Droge, E.; Seeger, A.; Steingrüber, R.; Mekonnen, G.C.; Unterborsch, G.; Bach, H.-G.; Bottcher, E.H.; Bimberg, D.
Journal Article
199740 GHz monolithically-integrated fully-balanced VCO using 0.3 mu m HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Jakobus, T.; Hülsmann, A.; Köhler, K.; Raynor, B.
Journal Article
1997High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Windscheif, J.
Conference Paper
1997Integrated optics for high bit-rate systems
Agrawal, N.; Jahn, E.; Pieper, W.
Conference Paper
199627 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier
Umbach, A.; Passenberg, W.; Unterborsch, G.; Mekonnen, G.G.; Schlaak, W.; Schramm, C.; Ebert, W.; Wolfram, P.; Bach, H.-G.; Waasen, S. van; Bertenburg, R.M.; Janssen, G.; Reuter, R.; Auer, U.; Tegude, F.-J.
Conference Paper
1996MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration
Passenberg, W.; Schlaak, W.; Umbach, A.
Conference Paper
1996Monolithically integrated asymmetric Mach-Zehnder interferometer as a 20 Gbit/s all-optical add/drop multiplexer for OTDM systems
Jahn, E.; Agrawal, N.; Ehrke, H.-J.; Ludwig, R.; Pieper, W.; Weber, H.G.
Journal Article
1996Monolithically integrated nonlinear Sagnac interferometer and its application as a 20 Gbit/s all-optical demultiplexer
Jahn, E.; Agrawal, N.; Pieper, W.; Ehrke, H.-J.; Franke, D.; Weber, H.G.; Furst, W.
Conference Paper
1996Semiconductor laser amplifier based integrated interferometers for add/drop multiplexing in OTDM systems
Agrawal, N.; Jahn, E.; Pieper, W.; Ehrke, H.-J.
Conference Paper
1995Monolithic integrated high-speed balanced-mixer detector on InP
Unterborsch, G.; Trommer, D.; Jacumeit, G.; Mekonnen, G.G.; Reier, F.; Stenzel, R.
Conference Paper
1995Monolithic integrated optoelectronic circuits for optical links
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G.
Conference Paper
1995Monolithically integrated polarisation-insensitive high-speed balanced mixer receiver on InP
Trommer, D.; Unterborsch, G.
Journal Article
1994Device and process technologies for monolithic, high-speed, low-chirp semiconductor laser transmitters.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Bronner, W.; Hornung, J.; Köhler, K.
Conference Paper
1994Enhanced CAIBE for high-speed OEICs
Ralston, J.D.; Eisele, K.; Sah, R.E.; Fleissner, J.; Bronner, W.; Hornung, J.; Raynor, B.
Journal Article
1994Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration
Ralston, J.D.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Bender, K.; Rosenzweig, J.
Conference Paper
1994Molecular beam epitaxy and technology for the monolithic integration of quantum well lasers and AlGaAs/GaAs/AlGaAs-HEMT electronics
Bronner, W.; Hornung, J.; Köhler, K.; Olander, E.
Conference Paper
1993Integration of a quantum well laser with AlGaAs/GaAs-HEMT electronics.
Bronner, W.; Hornung, J.; Köhler, K.; Olander, E.; Wang, Z.-G.
Conference Paper
1993Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Conference Paper
1993Monolithic integrated wavelength duplexer-receiver on InP
Bornholdt, C.; Trommer, D.; Unterborsch, G.; Bach, H.-G.; Venghaus, H.; Weinert, C.M.
Journal Article
1992Comparison of vertically-compact high-speed GaAs and In0.35Ga0.65As MQW diode lasers designed for monolithic integration.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Rosenzweig, J.; Fleissner, J.
Conference Paper
1992Electro-optic modulation by electron transfer in multiple InGaAsP/InP barrier, reservoir, and quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.
Journal Article
1992Integrated wavelength demultiplexer-receiver on InP
Bornholdt, C.; Trommer, D.; Unterborsch, G.; Bach, H.G.; Kappe, F.; Passenberg, W.; Rehbein, W.; Reier, F.; Schramm, C.; Stenzel, R.; Umbach, A.; Venghaus, H.; Weinert, C.M.
Journal Article
1992Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.
Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Fleissner, J.; Larkins, E.C.; Ralston, J.D.; Rosenzweig, J.
Conference Paper
1990High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors
Paraskevopoulos, A.; Bach, H.G.; Schroeter-Janssen, H.; Mekonnen, G.; Hensel, H.J.; Grote, N.
Conference Paper
1990Polarization converter and splitter for a coherent receiver optical network on InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.-P.; Schlak, M.; Weinert, C.M.
Conference Paper
1989Coherent optical techniques for broadband ISDN
Baack, C.; Heydt, G.
Journal Article
1988Thermally excited silicon microactuators
Benecke, W.; Riethmüller, W.
Journal Article
1986An optoelectronic adder
MacDonald, R.I.
Journal Article
1985An InGaAsP/InP double-heterojunction bipolar transistor for monolithic integration with a 1.5- mu m laser diode
Su, L.M.; Grote, N.; Kaumanns, R.; Katzschner, W.; Bach, H.G.
Journal Article
1984Diffused planar InP bipolar transistor with a cadmium oxide film emitter
Su, L.M.; Grote, N.; Schmitt, F.
Journal Article