Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC
Erlekampf, Jürgen; Kaminzky, Daniel; Rosshirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar
Conference Paper
2013Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter
Conference Paper
2012Influence of bulk and surface properties on measurable steady-state carrier-lifetime
Turek, M.
Journal Article, Conference Paper
2012Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter
Poster
2012Investigation of excess charge carrier lifetime measurements on samples of arbitrary thickness
Turek, M.; Möller, C.; Lauer, K.
Conference Paper
2005Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes
Hoffmann, D.; Gin, A.; Wei, Y.; Hood, A.; Fuchs, F.; Razeghi, M.
Journal Article
2003Trap centers and minority carrier lifetimes in InAs/(GaIn)Sb superlattice long wavelength photodetectors
Yang, Q.K.; Pfahler, C.; Schmitz, J.; Pletschen, W.; Fuchs, F.
Conference Paper
1993Comparison of lifetime measurements from the Zerbst and the dispersion techniques.
Klausmann, E.; Fahrner, W.R.; Löffler, S.; Neitzert, H.C.
Journal Article
1990Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide
Schneider, J.; Müller, H.D.; Maier, K.; Wilkening, W.; Fuchs, F.; Leibenzeder, S.; Stein, R.; Dörnen, A.
Journal Article
1989The electronic states of the Si-SiO2 interface.
Klausmann, E.; Fahrner, W.R.; Bräunig, D.
Book Article