Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019W-Band LNA MMICs based on a noise-optimized 50-nm gate-length metamorphic HEMT Technology
Thome, Fabian; Leuther, Arnulf; Heinz, Felix; Ambacher, Oliver
Conference Paper
201870-116-GHz LNAs in 35-nm and 50-nm gate-length metamorphic HEMT technologies for cryogenic and room-temperature operation
Thome, Fabian; Leuther, Arnulf; Gallego, Juan Daniel; Schäfer, Frank; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2018Highly isolating and broadband single-pole double-throw switches for millimeter-wave applications up to 330 GHz
Thome, Fabian; Ambacher, Oliver
Journal Article
2018Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology
Feuerschütz, Philip; Friesicke, Christian; Lozar, Roger; Wagner, Sandrine; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne F.
Conference Paper
2018W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
Thome, Fabian; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2014A 220 to 320 GHz broadband active frequency multiplier-by-eight MMIC
Lewark, U.J.; Tessmann, A.; Wagner, S.; Leuther, A.; Zwick, T.; Kallfass, I.
Conference Paper
2013A 243 GHz LNA module based on mHEMT MMICs with integrated waveguide transitions
Hurm, V.; Weber, R.; Tessmann, A.; Massler, H.; Leuther, A.; Kuri, M.; Riessle, M.; Stulz, H.P.; Zink, M.; Schlechtweg, M.; Ambacher, O.; Närhi, T.
Journal Article