Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF
Mikulla, M.; Leuther, A.; Brueckner, P.; Schwantuschke, D.; Tessmann, A.; Schlechtweg, M.; Ambacher, O.; Caris, M.
Conference Paper
200750 nm MHEMT technology for G- and H-band MMICs
Leuther, A.; Tessmann, A.; Dammann, M.; Schwörer, C.; Schlechtweg, M.; Mikulla, M.; Lösch, R.; Weimann, G.
Conference Paper
2005A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology
Schwörer, C.; Campos-Roca, Y.; Leuther, A.; Tessmann, A.; Seelmann-Eggebert, M.; Massler, H.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides
Bessemoulin, A.; Fellon, P.; Gruenenpuett, J.; Massler, H.; Reinert, W.; Kohn, E.; Tessmann, A.
Conference Paper
2004Frontiers of III-V compounds and devices
Würfl, J.; Schlechtweg, M.
Conference Paper
2004Millimeter-wave and mixed-signal integrated circuits based on advanced metamorphic HEMT technology
Schlechtweg, M.; Leuther, A.; Tessmann, A.; Schwörer, C.; Massler, H.; Reinert, W.; Lang, M.; Nowotny, U.; Kappeler, O.; Walther, M.; Lösch, R.
Conference Paper
2004Millimeter-wave circuits based on advanced metamorphic HEMT technology
Tessmann, A.; Leuther, A.; Schwörer, C.; Massler, H.; Reinert, W.; Walther, M.; Lösch, R.; Schlechtweg, M.
Conference Paper
2003Integrated circuits based on 300 GHz f(T) metamorphic HEMT technology for millimeter-wave and mixed-signal applications
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Schwörer, C.; Lang, M.; Nowotny, U.; Kappeler, O.
Conference Paper
2003Low-noise W-band amplifiers for radiometer applications using a 70nm metamorphic HEMT technology
Schwörer, C.; Tessmann, A.; Leuther, A.; Massler, H.; Reinert, W.; Schlechtweg, M.
Conference Paper
2003Metamorphic HEMT technologies for millimeter-wave low-noise applications
Tessmann, A.; Leuther, A.; Massler, H.; Reinert, W.; Schwörer, C.; Dammann, M.; Walther, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
200258-82 GHz 4:1 dynamic frequency divider using 100nm metamorphic enhancement HEMT technology
Lang, M.; Leuther, A.; Benz, W.; Raynor, B.; Schlechtweg, M.
Journal Article
200266 GHz 2:1 static frequency divider using 100 nm metamorphic enhancement HEMT technology
Lang, M.; Leuther, A.; Benz, W.; Nowotny, U.; Kappeler, O.; Schlechtweg, M.
Journal Article
2002Coplanar high performance MMICs in MHEMT and PHEMT technology for applications up to 100 GHz
Schwörer, C.; Tessmann, A.; Leich, M.; Leuther, A.; Kudszus, S.; Bessemoulin, A.; Schlechtweg, M.
Conference Paper
2002Potential of metamorphic HEMT with 0.25µm refractory metal gate for power application in Ka-Band
Benkhelifa, F.; Quay, R.; Lösch, R.; Schäuble, K.; Dammann, M.; Mikulla, M.; Weimann, G.
Conference Paper
2001High performance metamorphic HEMT with 0.25 µm refractory metal gate on 4´´ GaAs substrate
Benkhelifa, F.; Chertouk, M.; Dammann, M.; Massler, H.; Walther, M.; Weimann, G.
Conference Paper
1998MBE growth of metamorphic In(Ga)AlAs buffers
Sexl, M.; Böhm, G.; Maier, M.; Tränkle, G.; Weimann, G.; Abstreiter, G.
Conference Paper