Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Analytical model for thin-film SOI PIN-diode leakage current
Schmidt, Andrei; Dreiner, Stefan; Vogt, Holger; Goehlich, Andreas; Paschen, Uwe
Journal Article
2014Analog circuit design in PD-SOI CMOS technology for high temperatures up to 400 °C using reverse body biasing (RBB)
Schmidt, Alexander
: Kokozinski, Rainer (Gutachter); Fiedler, Horst-Lothar (Gutachter)
Dissertation
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2013Analog performance of PD-SOI MOSFETs at high temperatures using reverse body bias
Schmidt, Alexander; Kappert, Holger; Kokozinski, Rainer
Conference Paper
2013Detailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes
Weinreich, W.; Shariq, A.; Seidel, K.; Sundqvist, J.; Paskaleva, A.; Lemberger, M.; Bauer, A.J.
Journal Article, Conference Paper
2013High temperature analog circuit design in PD-SOI CMOS technology using reverse body biasing
Schmidt, Alexander; Kappert, Holger; Kokozinski, Rainer
Conference Paper
2013PD-SOI MOSFET performance optimization for high temperatures up to 400°C using reverse body biasing
Schmidt, Alexander; Kappert, Holger; Kokozinski, Rainer
Conference Paper
2012Nanoscale characterization of TiO2 films grown by atomic layer deposition
Murakami, Katsuhisa; Rommel, Mathias; Bauer, Anton J.; Frey, Lothar; Hudec, Boris; Rosova, A.; Hueková, K.; Fröhlich, Karol; Kasikov, A.; Ramula, R.; Aarik, J.; Han, J.H.; Han, S.; Lee, W.; Song, S.J.; Hwang, C.S.
Poster
2012Ohmic and rectifying contacts on bulk AlN for radiation detector applications
Erlbacher, Tobias; Bickermann, Matthias; Kallinger, Birgit; Meissner, Elke; Bauer, Anton J.; Frey, Lothar
Journal Article, Conference Paper
2010Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T.
Journal Article
2009In-vitro tests for biostability of materials for micro implants
Betz, W.; Trieu, H.-K.; Vogt, H.
Conference Paper
2008Physical and electrical characterization of high-k ZrO2 metal-insulator-metal capacitor
Kim, J.-H.; Ignatova, V.; Kücher, P.; Heitmann, J.; Oberbeck, L.; Schröder, U.
Journal Article
2002Influence of photoresist pattern on charging damage during high current ion implantation
Dirnecker, T.; Ruf, A.; Frey, L.; Beyer, A.; Bauer, A.J.; Henke, D.; Ryssel, H.
Conference Paper
1996Operational amplifier design using GaAs MESFET for temperature applications up to 350 deg C
Baureis, P.; Gerber, J.; Würfl, J.; Janke, B.
Conference Paper
1994Self-consistent finite difference method for simulation and optimization of quantum well electron transfer structures
Weinert, C.M.; Agrawal, N.
Journal Article
1993Electroabsorption and saturation behavior of InGaAsP/InP/InAlAs multiple superlattice electron transfer optical modulator structures
Agrawal, N.; Reier, F.W.; Bornholdt, C.; Weinert, C.M.; Li, K.C.; Harde, P.; Langenhorst, R.; Grosskopf, G.; Berger, L.; Wegener, M.
Journal Article
1992Shallow p-n junctions produced by laser doping with boron silicate glass
Bollmann, D.; Buchner, R.; Haberger, K.; Neumayer, G.
Conference Paper