Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Channeling in 4H-SiC from an Application Point of View
Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.; Erlbacher, Tobias
Conference Paper
2019Raman Spectroscopy Characterization of Ion Implanted 4H-SiC and its Annealing Effects
Xu, Zongwei; Song, Ying; Rommel, Mathias; Liu, T.; Kocher, Matthias; He, Z.D.; Wang, H.; Yao, B.T.; Liu, L.; Fang, Fengzhou
Conference Paper
2019Wavelength-selective 4H-SiC UV-sensor array
Matthus, C.D.; Bauer, A.J.; Frey, L.; Erlbacher, T.
Journal Article
2018Defect functional structures of 4H-SiC and diamond induced by ion implantation: MD simulation and spectral characterization
Xu, Zongwei; Zhao, Junlei; Djurabekova, Flyura; Rommel, Mathias; Nordlund, Kai
Presentation
2018Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes
Matthus, C.D.; Huerner, A.; Erlbacher, T.; Bauer, A.; Frey, L.
Journal Article
2018Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC
He, Zhongdu; Xu, Zongwei; Rommel, Mathias; Yao, Boteng; Liu, Tao; Song, Ying; Fang, Fengzhou
Journal Article
2018Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effects
Xu, Zongwei; Song, Y.; Rommel, Mathias; Liu, T.; Kocher, Matthias; He, Z.D.; Wang, H.; Yao, B.T.; Liu, L.; Fang, F.Z.
Poster
2017Platinum diffusion for advanced silicon power devices
Badr, Elie
: Pichler, Peter; Wellmann, Peter
Dissertation
2016The efficiency of hydrogen-doping as a function of implantation temperature
Jelinek, Moriz; Laven, Johannes G.; Ganagona, Naveen Goud; Schustereder, Werner; Schulze, Hans-Joachim; Rommel, Mathias; Frey, Lothar
Conference Paper
2016Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization
Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, Anton J.; Frey, Lothar
Conference Paper
2016Modeling the post-implantation annealing of platinum
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Conference Paper
2016Optimization of 4H-SiC UV photodiode performance using numerical process and device simulation
Burenkov, Alex; Matthus, Christian David; Erlbacher, Tobias
Journal Article
2015THz emission from argon implanted silicon surfaces
Blumröder, Ulrike; Steglich, Martin; Schrempel, Frank; Hoyer, Patrick; Nolte, Stefan
Journal Article
2014Challenges and opportunities for process modeling in the nanotechnology era
Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.
Journal Article
2013Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Conference Paper
2012Precipitation of antimony implanted into silicon
Koffel, S.; Pichler, P.; Reading, M.A.; Berg, J. van den; Kheyrandish, H.; Hamm, S.; Lerch, W.; Pakfar, A.; Tavernier, C.
Journal Article, Conference Paper
2012Simulation of BF3 plasma immersion ion implantation into silicon
Burenkov, A.; Hahn, A.; Spiegel, Y.; Etienne, H.; Torregrosa, F.
Conference Paper
2011Simulation of plasma immersion ion implantation
Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.
Conference Paper
2010Biological relevance of ion energy in performance of human endothelial cells on ion-implanted flexible polyurethane surfaces
Ozkucur, N.; Richter, E.; Wetzel, C.; Funk, R.H.W.; Monsees, T.K.
Journal Article
2010Characterization of arsenic segregation at Si/SiO2 interface by 3D atom probe tomography
Ngamo, M.; Duguay, S.; Pichler, P.; Daoud, K.; Pareige, P.
Journal Article, Conference Paper
2010Honeycomb voids due to ion implantation in germanium
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2010Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminum implanted 4H SiC
Schmitt, H.; Häublein, V.; Bauer, A.J.; Frey, L.
Poster
2008Helium and radiation defect accumulation in metals under stress
Dobmann, G.; Korshunov, S.N.; Kröning, M.; Martynenko, Y.V.; Skorlupkin, I.D.; Surkov, A.S.
Journal Article
2008Ion implantation into nanoparticulate functional layers
Walther, S.; Jank, M.P.M.; Ebbers, A.; Ryssel, H.
Conference Paper
2004Adaptive surface triangulations for 3D process simulation
Nguyen, P.-H.; Burenkov, A.; Lorenz, J.
Conference Paper
2002Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC
Laube, M.; Schmid, F.; Pensl, G.; Wagner, G.; Linnarsson, M.; Maier, M.
Journal Article
2002Electrical activation of implanted phosphorus ions in (0001)/(1120)-oriented 4H-SiC
Schmid, F.; Laube, M.; Pensl, G.; Wagner, G.; Maier, M.
Conference Paper
2002Electrical activation of implanted phosphorus ions in [0001]- and [11-20]-oriented 4H-SiC
Schmid, F.; Laube, M.; Pensl, G.; Wagner, G.; Maier, M.
Journal Article
2002Influence of photoresist pattern on charging damage during high current ion implantation
Dirnecker, T.; Ruf, A.; Frey, L.; Beyer, A.; Bauer, A.J.; Henke, D.; Ryssel, H.
Conference Paper
2001'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP ( lambda =1.53-1.55 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Journal Article
2001On the effect of local electronic stopping on ion implantation profiles in non-crystalline targets
Burenkov, A.; Mu, Y.; Ryssel, H.
Conference Paper
2000"On-wafer" surface implanted high power, picosecond pulse InGaAs/InP ( lambda -1.53-1.55 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Conference Paper
2000A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Journal Article
2000High-power, picosecond pulse generation from surface implanted InGaAsP/InP ( lambda =1.53 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Conference Paper
2000Phosphorus ion shower implantation for special power IC applications
Kröner, F.; Schork, R.; Frey, L.; Burenkov, A.; Ryssel, H.
Conference Paper
1999A computationally efficient method for three-dimensional simulation of ion implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1999Ion beam processing of SiC for optical application
Wesch, W.; Heft, A.; Menzel, R.; Bachmann, T.; Peiter, G.; Hobert, H.; Höche, T.; Dannberg, P.; Bräuer, A.
Journal Article
1999Li+ grafting of ion irradiated polyethylene
Svorcik, V.; Rybka, V.; Vacik, J.; Hnatowicz, V.; Ochsner, R.; Ryssel, H.
Journal Article
1999Reliability of ultra-thin gate oxides grown in low-pressure N20 ambient or on nitrogen-implanted silicon
Bauer, A.J.; Beichele; Herden, M.; Ryssel, H.
Conference Paper
1999Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology
Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1998Lead chalcogenide mid-infrared diode lasers fabricated by ion-implantation
Xu, J.; Lambrecht, A.; Tacke, M.
Journal Article
1998Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Journal Article
1997Low energy implantation and transient enhanced diffusion
Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.
Conference Paper
1997Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1997Three-dimensional simulation of ion implantation
Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.
Conference Paper
1996Electrical properties of silicon carbide polytypes
Pensl, G.; Afanasev, V.V.; Bassler, M.; Schadt, M.; Troffer, T.; Heindl, J.; Strunk, H.P.; Maier, M.; Choyke, W.J.
Conference Paper
1996Three-dimensional simulation of ion implantation
Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1995Analysis of contamination - a must for ultraclean technology
Ryssel, H.; Streckfuß, N.; Aderhold, W.; Berger, R.; Falter, T.; Frey, L.
Conference Paper
1995Analytical modeling of lateral implantation profiles
Lorenz, J.; Ryssel, H.; Wierzbicki, R.J.
Journal Article
1995Gitterdeformation in Silicium nach Implantationen von Phosphor
Remmler, M.; Frey, L.; Ryssel, H.
Conference Paper
1995Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing
Kunzel, H.; Bottcher, J.; Hase, A.; Hofsass, V.; Kaden, C.; Schweizer, H.
Conference Paper, Journal Article
1995Strain profiles in phosphorus implanted /100/-silicon
Remmler, M.; Frey, L.; Horvath, Z.E.; Ryssel, H.
Conference Paper
1994Analytic expressions for ion reflection from amorphous targets
Wierzbicki, R.J.; Biersack, J.P.
Journal Article
1994Analytical description of high energy implantation profiles of bordon and phosphorus into crystalline silicon
Gong, L.; Bogen, S.; Frey, L.; Jung, W.; Ryssel, H.
Journal Article
1994High dose and intense implantation of the multiply charged Al plus n, Ti plus n and C plus n into alfa-iron
Pogrebnjak, A.D.; Bakharev, O.G.; Martynenko, V.A.; Rudenko, V.A.; Brusa, R.; Zecca, A.; Ryssel, H.; Tikhomirov, I.A.; Ryabchikov, A.I.; Öchsner, R.
Journal Article
1994Investigation of the effect of altered defect structure produced by photon assisted the diffusion of As in silicon during thermal anneallagation
Biro, L.P.; Gyulai, J.; Bogen, S.; Frey, L.; Ryssel, H.
Journal Article
1994Ionenstrahlmodifizierung von mit dem Laser-Arc abgeschiedenen DLC-Schichten
Kolitsch, A.; Drescher, D.; Scheibe, H.J.
Conference Paper
1994Observation of local SIMOX layers by microprobe RBS
Kinomura, A.; Horino, Y.; Mokuno, Y.; Chayahara, A.; Kiuchi, M.; Fujii, K.; Takai, M.; Lohner, T.; Ryssel, H.; Schork, R.
Journal Article
1994On modeling of ion implantation at high temperatures
Pichler, P.; Schork, R.
Journal Article
1994Reflection approach for the analytical description of light ion implantation into bilayer structures
Wierzbicki, R.J.; Biersack, J.P.; Barthel, A.; Lorenz, J.; Ryssel, H.
Journal Article
1994Single crystal growth of Si-Ge alloy by ion implantation and sequential rapid thermal
Kal, S.; Kasko, I.; Ryssel, H.
Journal Article
1994X-ray diffraction phase analyses of thin layers using an electroluminescence detector with different evaluation procedures
Moras, K.; Taut, T.; Taut, C.; Pirling, T.
Conference Paper
1993Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements.
Koidl, P.; Uzan-Saguy, C.; Kalish, R.; Bruder, M.; Bachem, K.H.; Wagner, J.
Journal Article
1993High energy implantation of high10 B and high11 B into -100- silicon in channel and in random
Gong, L.; Frey, L.; Bogen, S.; Ryssel, H.
Journal Article
1993Improvement of surface properties of polymers by ion implantation
Öchsner, R.; Kluge, A.; Zechel-Malonn, S.; Gong, L.; Ryssel, H.
Journal Article
1993A novel delineation technique for 2D-profiling of dopants in crystalline silicon
Gong, L.; Frey, L.; Bogen, S.; Ryssel, H.
Journal Article
1993Photon assisted implantation -PAI-
Biro, L.P.; Gyulai, J.; Ryssel, H.; Frey, L.; Kormany, T.; Tuan, N.M.
Journal Article
1993Residual stress during local SIMOX process - Raman measurement and simulation
Seidl, A.; Takai, M.; Sayama, H.; Haramura, K.; Ryssel, H.; Schork, R.; Kato, K.
Journal Article
1993Shallow junction formation by dopant outdiffusion from CoSi2 and its application in sub 0.5 mu m MOS processes
Niazmand, M.; Friedrich, D.; Windbracke, W.
Conference Paper
1992The effect of ion implantation on the lifetime of punches
Öchsner, R.; Kluge, A.; Ryssel, H.; Stepper, M.; Straede, C.; Politiek, J.
Conference Paper
1992The effect of ion implantation on the lifetime of punches
Öchsner, R.; Kluge, A.; Ryssel, H.; Stepper, M.; Straede, C.; Politiek, J.
Conference Paper
1992Reduction of friction and wear by ion-implanted carbonized photoresit
Bogen, S.; Gyulai, J.; Kluge, A.; Öchsner, R.; Ryssel, H.
Conference Paper
1992Reduction of friction and wear by ion-implanted carbonized photoresit
Bogen, S.; Gyulai, J.; Kluge, A.; Öchsner, R.; Ryssel, H.
Conference Paper
1992Stress biasing of thin film membranes
Moldovan, N.; Csepregi, L.; Suski, J.; Lang, W.
Conference Paper
1991Effect of deposition temperature of arsenic implanted poly-Si-on-insulator on grain size and residual stress
Takai, M.; Kato, K.; Namba, S.; Pfannenmüller, U.; Ryssel, H.
Journal Article
1991MBE overgrowth of implanted regions in InP:Fe substrates
Kunzel, H.; Gibis, R.; Schlaak, W.; Su, L.M.; Grote, N.
Conference Paper, Journal Article
1991Oblique ion implantation into nonplanar targets
Takai, M.; Namba, S.; Ryssel, H.
Journal Article
1989Implanted-collector InGaAsP/InP heterojunction bipolar transistor
Su, L.M.; Grote, N.; Schumacher, P.; Franke, D.
Conference Paper
1989Ion implantation in single-crystal magnetic ferrite.
Takai, M.; Lu, Y.F.; Minamisono, T.; Namba, S.; Ryssel, H.
Journal Article
1989Process simulation at FhG-AIS
Lorenz, J.
Conference Paper
1989Programs for VLSI process simulation
Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H.
Conference Paper
1989Resonant raman scattering on In+-implanted CdTe and Cd0.23Hg0.77Te.
Lusson, A.; Ramsteiner, M.; Wagner, J.
Journal Article
1989Simulation halbleitertechnologischer Prozess-Schritte in der Mikroelektronik
Lorenz, J.; Pelka, J.; Ryssel, H.
Journal Article
1989Simulation of complete process step sequences in silicon technology
Pichler, P.; Lorenz, J.
Conference Paper
1989Simulation of ion implantation into multilayer structures
Wierzbicki, R.J.; Barthel, A.; Lorenz, J.
Conference Paper
1989Simulation of the lateral spread of implanted ions - experiments
Gong, L.; Barthel, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1989Simulation of the lateral spread of implanted ions - theory
Barthel, A.; Krüger, W.; Lorenz, J.
Conference Paper