Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits
Weisse, Julietta; Mitlehner, Heinz; Frey, Lothar; Erlbacher, Tobias
Conference Paper
2018Comparison of CDM and CC-TLP robustness for an ultra-high speed interface IC
Weber, Johannes; Fung, Rita; Wong, Richard; Wolf, Heinrich; Gieser, A. Horst; Maurer, Linus
Conference Paper
2018Current controlled CMOS stimulator with programmable pulse pattern for a retina implant
Raffelberg, Pascal; Burkard, Roman; Viga, Reinhard; Mokwa, Wilfried; Walter, Peter; Grabmaier, Anton; Kokozinski, Rainer
Conference Paper
2017Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2016Prospects and issues of nanomaterials use in microelectronics
Jank, Michael; Bauer, Anton; Frey, Lothar
Poster
2013Terahertz sensing with meta-surfaces and integrated circuits
Reinhard, B.; Schmitt, K.; Fip, T.; Volk, M.; Neu, J.; Mahro, A.-K.; Beigang, R.; Rahm, M.
Conference Paper
2012Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration
Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar
Journal Article
2011Assessment of the accuracy of cure kinetics models and fitting approaches utilised in analysis of microelectronics encapsulation materials
Tilford, Tim; Ferenets, Marju; Adamietz, Raphael; Pavuluri, Sumanth Kumar; Desmulliez, Marc P.Y.; Bailey, Chris
Conference Paper
2009A 200 GHz monolithic integrated power amplifier in metamorphic HEMT technology
Kallfass, I.; Pahl, P.; Massler, H.; Leuther, A.; Tessmann, A.; Koch, S.; Zwick, T.
Journal Article
2009Actuators to be integrated in low temperature cofired ceramics (LTCC) microfluidic systems
Klumbies, H.; Partsch, U.; Goldberg, A.; Gebhardt, S.; Keitel, U.; Neubert, H.
Conference Paper
2008100 Gbit/s fully integrated InP DHBT-based CDR/1:2 DEMUX IC
Makon, R.E.; Driad, R.; Lösch, R.; Rosenzweig, J.; Schlechtweg, M.
Conference Paper
2008A 210 GHz dual-gate FET mixer MMIC with > 2 dB conversion gain, high LO-to-RF isolation, and low LO-drive requirements
Kallfass, I.; Massler, H.; Leuther, A.; Tessmann, A.; Schlechtweg, M.
Journal Article
2008Metamorphic HEMT MMICs and modules for use in a high-bandwidth 210 GHz radar
Tessmann, A.; Kallfass, I.; Leuther, A.; Massler, H.; Kuri, M.; Riessle, M.; Zink, M.; Sommer, R.; Wahlen, A.; Essen, H.; Hurm, V.; Schlechtweg, M.; Ambacher, O.
Journal Article
2006A high dynamic range current-mode amplifier for computed tomography
Steadman, R.; Vogtmeier, G.; Kemna, A.; Ibnou Quossai, S.; Hosticka, B.J.
Journal Article
2006InP DHBT based IC technology for over 80 Gbit/s data communications
Driad, R.; Makon, R.E.; Schneider, K.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G.
Conference Paper, Journal Article
2004Frontiers of III-V compounds and devices
Würfl, J.; Schlechtweg, M.
Conference Paper
2003Early mask making during the 1960's in Dresden
Becker, H.W.
Conference Paper
2000Integrated circuit design and application for electronic ballasts
Radecker, M.
Conference Paper
1999Optical signal and energy transmission for a retina implant
Groß, M.; Buß, R.; Köhler, K.; Schaub, J.; Jäger, D.
Conference Paper
1999A Planning and Control Model for Customer-Oriented IC Development and Manufacturing
Frauenhoffer, F.; Sturm, R.; Mönch, G.; Podewils, M. von; Richter, K.; Schmalfuß, V.
Journal Article
1998Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy
Gaymann, A.; Maier, M.; Köhler, K.; Bronner, W.; Grotjahn, F.; Hornung, J.; Ludwig, M.
Conference Paper
199725 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier ICs using AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Thiede, A.; Bosch, R.; Hofmann, P.; Hülsmann, A.; Moglestue, C.; Köhler, K.
Conference Paper
199745 Gbit/s AlGaAs/GaAs HEMT multiplexer IC
Lao, Z.; Nowotny, U.; Thiede, A.; Hurm, V.; Kaufel, G.; Rieger-Motzer, M.; Bronner, W.; Seibel, J.; Hülsmann, A.
Journal Article
1997Coplanar amplifiers up to W-band using InP-based dual-gate HEMTs
Baeyens, Y.; Zanden, K. van der; Schreurs, D.; Nauwelaers, B.; Hove, M. van; Rossum, M. van; Braunstein, J.
Conference Paper
1997Sub-nanosecond access time 2k sine-cosine ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Bushehri, E.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Bronner, W.; Hornung, J.; Kaufel, G.; Raynor, B.; Schneider, J.
Journal Article
199610 and 20 Gbit/s clock recovery GaAs IC with 288 deg phase-shifting function
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
199620-40 Gbit/s 0.2 mu m GaAs HEMT chip set for optical data receiver
Berroth, M.; Lang, M.; Wang, Z.-G.; Lao, Z.; Thiede, A.; Rieger-Motzer, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Hülsmann, A.; Schneider, J.
Conference Paper
1996Monolithic 10 channel 10 Gbit/s amplifier array using 0.3 mu m AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Ludwig, M.; Bronner, W.; Schneider, J.
Journal Article
1996Novel chips for the communication age-joint effort on III-V electronics a success
Diehl, R.
Journal Article
199510 Gbit/s monolithic optoelectronic integrated receiver with clock recovery, data decision and 1:4 demultipexer
Wang, Z.-G.; Hurm, V.; Lang, M.; Berroth, M.; Ludwig, M.; Fink, T.; Köhler, K.; Raynor, B.
Conference Paper
199419 GHz monolithic integrated clock recovery using PLL and 0.3 mym gate-length quantum-well HEMTs.
Wang, Z.-G.; Berroth, M.; Seibel, J.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
19947.5 Gb/s monolithically integrated clock recovery circuit using PLL and 0.3 micro-meter gate length well HEMTs
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1994Characterization and Improvement of GaAs HEMT Analog Switches for Sampled-Data Applications
Feng, S.; Seitz, D.
Journal Article
1994CMOS sensors applied to surface-water monitoring
Kordas, N.
Journal Article
1994Mikrosensoren für Elektrolyte
Kordas, N.
Journal Article
19937.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure.
Hornung, J.; Wang, Z.-G.; Bronner, W.; Olander, E.; Köhler, K.; Ganser, P.; Raynor, B.; Benz, W.; Ludwig, M.
Journal Article
1993A CMOS bandgap reference for low voltage applications
Hammerschmidt, D.; Nielsen, P.A.; Schnatz, F.V.; Brockherde, W.; Hosticka, B.J.
Conference Paper
1993Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3-mym gate length quantum-well HEMT's.
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Ludwig, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1993Intelligente Sensoren auf dem Weg zum ASIC
Vogt, H.
Journal Article
1993Materialfluß bei Clustertools
Bader, U.
Conference Paper
1993Mehrlagenmetallisierung für hochintegrierte mikroelektronische Schaltungen
Vogt, H.
Habilitation
1993New results of field-induced deformation of nematic liquid crystals for testing of digital integrated circuits
Wieberneit, M.; Lackmann, R.
Conference Paper
199215 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors.
Nowotny, U.; Gotzeina, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Wang, Z.-G.
Journal Article
199218 Gbit/s monolithically integrated 2 to 1 multiplexer and laser driving using 0.3 mym gate length quantum well hemt's.
Nowotny, U.; Bronner, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.; Wang, Z.-G.
Journal Article
1992KUSET, knowledge based user support for electron beam testing
Lackmann, R.; Weichert, G.
Conference Paper
1992Multigigahertz varactorless Si bipolar VCO IC.
Wang, Z.-G.
Journal Article
1991Flexible Layout-Synthese für analoge Schaltungen
Büddefeld, J.; Meyer zu Bexten, V.; Moraga, C.
Conference Paper
1990A digital output monolithic temperature sensor for invasive applications
Eichholz, J.; Kordas, N.; Langerbein, A.; Manoli, Y.; Mokwa, W.
Conference Paper
1989Submicron silicon bipolar master-slave D-type flip-flop for use ad 8.1 Gbit/s decision circuit and 11.2 Gbit/s demultiplexer
Runge, K.; Glimett, J.L.; Way, W.; Kipnis, I.; Snapp, C.; Clawin, D.; Cheung, N.K.
Journal Article