Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013Noise characteristics of InAs/GaSb superlattice infrared photodiodes
Wörl, A.; Kleinow, P.; Rehm, R.; Schmitz, J.; Walther, M.
Journal Article, Conference Paper
2006Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes
Hood, A.; Hoffmann, D.; Wei, Y.; Fuchs, F.; Razeghi, M.
Journal Article
2006Electroluminescence of InAs-GaSb heterodiodes
Hoffmann, D.; Hood, A.; Michel, E.; Fuchs, F.; Razeghi, M.
Journal Article
2006Negative luminescence of InAs/GaSb superlattice photodiodes
Fuchs, F.; Hoffmann, D.; Gin, A.; Hood, A.; Wei, Y.; Razeghi, M.
Journal Article
2006Nonequilibrium radiation of long-wavelength InAs/GaSb superlattice photodiodes
Hoffmann, D.; Hood, A.; Fuchs, F.; Razeghi, M.
Journal Article
2002Chapter 5: InAs/(GaIn)Sb superlattices: A promising material system for infra-red detection
Bürkle, L.; Fuchs, F.
Book Article
2002Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes
Yang, Q.K.; Fuchs, F.; Schmitz, J.; Pletschen, W.
Journal Article
2001Optoelectronic properties of Photodiodes for the mid- and far-infrared based on the InAs/GaSB/AlSb materials family
Fuchs, F.; Bürkle, L.; Hamid, R.; Herres, N.; Pletschen, W.; Sah, R.E.; Kiefer, R.; Schmitz, J.
Conference Paper
2000Electrical Characterization of InAs/(GaIn)Sb infrared superlattice photodiodes for the 8 to 12 µm range
Bürkle, L.; Fuchs, F.; Kiefer, R.; Pletschen, W.; Sah, R.E.; Schmitz, J.
Conference Paper
1999InAs/Ga(1-x)In(x)Sb infrared superlattice diodes. Correlation between surface morphology and electrical performance
Fuchs, F.; Bürkle, L.; Pletschen, W.; Schmitz, J.; Walther, M.; Güllich, H.; Herres, N.; Müller, S.
Conference Paper