Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2010Imaging stand-off detection of explosives using tunable MIR quantum cascade lasers
Fuchs, F.; Hinkov, B.; Hugger, S.; Kaster, J.M.; Aidam, R.; Bronner, W.; Köhler, K.; Yang, Q.; Rademacher, S.; Degreif, K.; Schnürer, F.; Schweikert, W.
Conference Paper
2010Imaging standoff detection of explosives using widely tunable midinfrared quantum cascade lasers
Fuchs, F.; Hugger, S.; Kinzer, M.; Aidam, R.; Bronner, W.; Lösch, R.; Yang, Q.K.; Degreif, K.; Schnürer, F.
Journal Article
2010Mid-infrared semiconductor lasers for power projection and sensing
Tholl, H.D.; Wagner, J.; Rattunde, M.; Hugger, S.; Fuchs, F.
Conference Paper
2010Time-resolved spectral characteristics of external-cavity quantum cascade lasers and their application to stand-off detection of explosives
Hinkov, B.; Fuchs, F.; Yang, Q.K.; Kaster, J.M.; Bronner, W.; Aidam, R.; Köhler, K.; Wagner, J.
Conference Paper, Journal Article
2009Broad band tunable quantum cascade lasers for stand-off detection of explosives
Hinkov, B.; Fuchs, F.; Kaster, J.M.; Yang, Q.K.; Bronner, W.; Aidam, R.; Köhler, K.
Conference Paper
2009Optical stand-off detection of explosives and improvised explosive devices - OFDEX
Schnürer, F.; Schweikert, W.; Heil, M.; Bunte, G.; Krause, H.; Fuchs, F.; Kaster, J.; Hinkov, B.; Yang, Q.K.; Bronner, W.; Köhler, K.; Wagner, J.; Jander, P.; Fricke-Begemann, C.; Noll, R.; Hildenbrand, J.; Herbst, J.; Degreif, K.; Lambrecht, A.
Conference Paper
2008GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008High-power diode lasers for the 1.9 to 2.2 µm wavelength range
Kelemen, M.T.; Gilly, J.; Moritz, R.; Rattunde, M.; Schmitz, J.; Wagner, J.
Conference Paper
2008High-power high-brightness operation of a 2.25-mu m (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Journal Article
2008An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers
Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2007Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs
Wagner, J.; Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Manz, C.; Wild, C.; Köhler, K.
Journal Article
2007High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wörner, E.; Wagner, J.
Conference Paper
2006GaSb-based 2.X µm quantum-well diode lasers with low beam divergence and high output power
Rattunde, M.; Schmitz, J.; Kaufel, G.; Kelemen, M.T.; Weber, J.; Wagner, J.
Journal Article
2006High-peak-power pulsed operation of 2.0 µm (AlGaIn) (AsSb) quantum-well ridge waveguide diode lasers
Eichhorn, M.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.
Journal Article
2005GaSb-based 1.9-2.4 µm quantum-well diode lasers with low-beam divergence
Rattunde, M.; Geerlings, E.; Schmitz, J.; Kaufel, G.; Weber, J.; Mikulla, M.; Wagner, J.
Conference Paper
2004Comprehensive analysis of the internal losses in 2.0 µm (AlGaIn)(AsSb) quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Journal Article
2004Room-temperature external cavity GaSb-based diode laser around 2.13 µm
Jacobs, U.H.; Scholle, K.; Heumann, E.; Huber, G.; Rattunde, M.; Wagner, J.
Journal Article
2003Gain and internal losses in GaSb-based 2 µm quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Conference Paper
2003Infrarot-Diodenlaser auf der Basis der III-V-Antimonide
Rattunde, M.
Dissertation
2003Temperature sensitivity of high power GaSb based 2 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.
Conference Paper
20021.9-µm and 2.0-µm laser diode pumping of Cr(2+):ZnSe and Cr(2+):CdMnTe
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Journal Article
2002Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.
Journal Article
2002Efficient 100 mW Cr(2+): ZnSe laser pumped by a 1.9 µm laser diode
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Conference Paper
2001Power efficiency of GaSb based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Fuchs, F.; Walther, M.; Wagner, J.
Conference Paper
2001Temperature dependence of threshold current for 1.8 to 2.3 µm (AlGaIn)(AsSb)-based QW diode lasers
Rattunde, M.; Mermelstein, C.; Simanowski, S.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Walther, M.; Wagner, J.
Conference Paper
1990"Mushroom" double-channel double-heterostructure lead chalcogenide lasers made by chemical etching
Böttner, H.; Schlereth, K.-H.; Tacke, M.
Journal Article
1990Buried waveguide double-heterostructure PbEuSe-lasers grown by MBE
Böttner, H.; Lambrecht, A.; Schlereth, K.-H.; Spanger, B.; Tacke, M.
Journal Article