Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Influence of growth temperature on the defect density for 4H-SiC homoepitaxy
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen
Poster
2011Homoepitaxial growth and defect characterization of 4H-SiC epilayers
Kallinger, Birgit; Thomas, Bernd; Berwian, Patrick; Friedrich, Jochen; Weber, Arnd-Dietrich; Volz, Eduard; Trachta, Gerd; Spiecker, Erdmann
Presentation
2009Crystallographic anisotropy of growth and etch rates of CVD diamond
Wolfer, M.; Biener, J.; El-Dasher, B.S.; Biener, M.M.; Hamza, A.V.; Kriele, A.; Wild, C.
Journal Article, Conference Paper
1996Homoepitaxial growth of CVD diamond: effect of nitrogen contaminations on growth rates
Wild, C.; Locher, R.; Koidl, P.
Book Article
1995Characterization of homoepitaxial diamond films by nuclear methods
Samlenski, R.; Schmälzlin, J.; Brenn, R.; Wild, C.; Müller-Sebert, W.; Koidl, P.
Journal Article
1995X-ray curve characterization of homo-epitaxial layers on silicon deposited after DC hydrogen cleaning
Dommann, A.; Herres, N.; Deller, H.R.; Nissen, H.U.; Krüger, D.; Pixley, R.E.; Ramm, J.
Journal Article