Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Journal Article
2013Deep-level characterization in GaN HEMTs. Pt.I: Advantages and limitations of drain current transient measurements
Bisi, D.; Meneghini, M.; Santi, C. de; Chini, A.; Dammann, M.; Brueckner, P.; Mikulla, M.; Meneghesso, G.; Zanoni, E.
Journal Article
2012Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
Manuel, J.M.; Morales, F.M.; Garcia, R.; Aidam, R.; Kirste, L.; Ambacher, O.
Journal Article
1999Technology of InP-based 1.55- mu m ultrafast OEMMICs: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers
Umbach, A.; Engel, T.; Bach, H.-G.; Waasen, S. van; Droge, E.; Strittmatter, A.; Ebert, W.; Passenberg, W.; Steingrüber, R.; Schlaak, W.; Mekonnen, G.G.; Unterborsch, G.; Bimberg, D.
Journal Article
1996Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP
Schramm, C.; Schlaak, W.; Mekonnen, G.G.; Passenberg, W.; Umbach, A.; Seeger, A.; Wolfram, P.; Bach, H.-G.
Journal Article
1996Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W.
Conference Paper
199517 GHz broadband amplifier with 25 dB gain using a 0.3 mym AlGaAs/GaAs/AlGaAs HEMT technology
Lang, M.; Berroth, M.; Rieger-Motzer, M.; Hülsmann, A.; Hoffmann, P.; Kaufel, G.; Köhler, K.; Raynor, B.; Wang, Z.-G.
Journal Article
1995Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Strahle, S.; Kohn, E.
Conference Paper, Journal Article
1994Development of advanced GaInAs/AlInAs delta-doped SQW-HEMT structures
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Hase, A.
Conference Paper
1994Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Heedt, C.
Journal Article
1994Novel high gate barrier AlInAs/GaInAs/InP HEMT structure: Concept verification and key technologies
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Schramm, C.; Kunzel, H.
Conference Paper
1994Ohmic contacts to buried n-GaInAs layers for GaInAs/AlInAs-HEMTs
Umbach, A.; Schramm, C.; Bottcher, J.; Unterborsch, G.
Conference Paper
1993Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H.
Conference Paper, Journal Article
1993On the potential of delta-doping for AlInAs/GaInAs HEMTs grown by MBE
Passenberg, W.; Bach, H.-G.; Bottcher, J.; Kunzel, H.
Conference Paper, Journal Article
1992Pseudomorphic GaxIn1-xAs on InP for HEMT structures grown by MBE
Kunzel, H.; Bach, H.G.; Bottcher, J.; Dickmann, J.; Dambkes, H.; Nachtwei, G.; Heide, S.
Conference Paper, Journal Article
1991MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers
Passenberg, W.; Bach, H.G.; Bottcher, J.
Conference Paper
1991Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE
Kunzel, H.; Passenberg, W.; Bottcher, J.; Heedt, C.
Conference Paper, Journal Article