Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Simulation and modeling of silicon carbide devices
Uhnevionak, Viktroyia
: Pichler, Peter; Weigel, Robert
2014Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect
Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena
Conference Paper
2012Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Conference Paper, Journal Article
1994Influence of delta doping profile and interface roughness on the transport properties of pseudomorphic heterostructures.
Fernandez de Avila, S.; Sanchez-Rojas, J.L.; Gonzalez-Sanz, F.; Calleja, E.; Munoz, E.; Hiesinger, P.; Köhler, K.; Jantz, W.
Journal Article