Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2011Measurement of the tuneable absorption in GaN-based multi-section laser diodes
Scheibenzuber, W.; Schwarz, U.T.; Sulmoni, L.; Carlin, J.F.; Castiglia, A.; Grandjean, N.
Journal Article, Conference Paper
2010AlGaN/GaN based heterostructures for MEMS and NEMS applications
Cimalla, V.; Röhlig, C.-C.; Lebedev, V.; Ambacher, O.; Tonisch, K.; Niebelschütz, F.; Brueckner, K.; Hein, M.A.
Conference Paper
2010Antiguiding factor of GaN-based laser diodes from UV to green
Scheibenzuber, W.; Schwarz, U.; Lermer, T.; Lutgen, S.; Strauss, U.
Journal Article
2004Influence of Mg doping profile on the electroluminescence properties of GaInN multiple quantum well light emitting diodes
Stephan, T.; Köhler, K.; Maier, M.; Kunzer, M.; Schlotter, P.; Wagner, J.
Conference Paper
2003Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2003Violet and blue laser diodes make strides
Haerle, V.; Lell, A.; Wagner, J.
Journal Article
2001Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
Wagner, J.; Obloh, H.; Kunzer, M.; Maier, M.; Köhler, K.
Journal Article
2001The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides
Stath, N.; Haerle, V.; Wagner, J.
Journal Article
2000Group III-Nitride heterostructures: From materials research to devices
Wagner, J.; Obloh, H.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Kiefer, R.; Kaufmann, U.; Köhler, K.
Conference Paper
2000Optimization of InGaN/GaN quantum wells for violet GaN/InGaN/AlGaN LEDs
Ramakrishnan, A.; Kunzer, M.; Schlotter, P.; Obloh, H.; Pletschen, W.; Köhler, K.; Wagner, J.
Conference Paper
2000Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells
Ramakrishnan, A.; Wagner, J.; Kunzer, M.; Obloh, H.; Köhler, K.
Journal Article
2000Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Köhler, K.; Johs, B.
Conference Paper
1999Composition dependence of the band gap energy of In(x)Ga(1-x)N layers on GaN(x < = 0.15) grown by metal-organic chemical vapor deposition
Wagner, J.; Ramakrishnan, A.; Behr, D.; Maier, M.; Herres, N.; Kunzer, M.; Obloh, H.; Bachem, K.H.
Conference Paper
1999Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M.
Journal Article
1999Group III-nitride based blue emitters
Obloh, H.; Bachem, K.H.; Behr, D.; Kaufmann, U.; Kunzer, M.; Ramakrishnan, A.; Schlotter, P.; Seelmann-Eggebert, M.; Wagner, J.
Book Article
1999Herstellung und Charakterisierung von InGaN/GaN Heterostrukturen für kurzwellige Emitter
Ramakrishnan, A.
Thesis
1999Mode conversion in GaN based laser structures on sapphire due to the birefringence of the nitrides
Heppel, S.; Wirth, R.; Off, J.; Scholz, F.; Hangleiter, A.; Obloh, H.; Wagner, J.; Kirchner, C.; Kamp, M.
Journal Article
1999Resonant raman scattering as a selective probe for compositional inhomogeneity in low In content (InGa)N
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Maier, M.; Bachem, K.H.
Conference Paper
1998Spectroscopic ellipsometry characterization of (InGa)N on GaN
Wagner, J.; Ramakrishnan, A.; Behr, D.; Obloh, H.; Kunzer, M.; Bachem, K.H.
Journal Article