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| 2002 | All-active InGaAsP/InP ring cavities for widespread functionalities in the wavelength domain
Troppenz, U.; Hamacher, M.; Rabus, D.G.; Heidrich, H. | Conference Paper |
| 2002 | Box-like filter response of triple ring resonators with integrated SOA sections based on GaInAsP/InP
Rabus, D.G.; Hamacher, M.; Heidrich, H.; Troppenz, U. | Conference Paper |
| 2001 | MMI-coupled ring resonators in GaInAsP-InP
Rabus, D.G.; Hamacher, M. | Journal Article |
| 2000 | "On-wafer" surface implanted high power, picosecond pulse InGaAs/InP ( lambda -1.53-1.55 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L. | Conference Paper |
| 2000 | Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas
Schroeter-Janssen, H.; Roehle, H.; Franke, D.; Bochnia, R.; Harde, P.; Grote, N. | Conference Paper, Journal Article |
| 2000 | Detuned grating multi-section-RW-DFB-lasers for high speed optical signal processing
Mohrle, M.; Sartorius, B.; Bornholt, C.; Bauer, S.; Brox, O.; Sigmund, A.; Steingrüber, R.; Radziunas, M.; Wünsche, H.J. | Conference Paper |
| 2000 | Integratable high-power small-linewidth lambda /4 phase-shifted 1.55 mu m InGaAsP-InP-ridge-waveguide DFB-lasers
Mohrle, M.; Sigmund, A.; Kreissl, J.; Reier, F.; Steingrüber, R.; Rehbein, W.; Roehle, H. | Conference Paper |
| 2000 | Optical crosstalk within monolithic transceiver ICs on GaInAsP/InP
Kaiser, R.; Hamacher, M.; Heidrich, H.; Albrecht, P.; Janiak, K.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H. | Conference Paper |
| 1999 | Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS
Harde, P.; Gibis, R.; Kaiser, R.; Kizuki, H.; Kunzel, H. | Conference Paper, Journal Article |
| 1998 | Laser/waveguide integration utilizing selective area MOMBE regrowth for photonic IC applications
Kunzel, H.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S. | Conference Paper |
| 1998 | Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S. | Journal Article |
| 1998 | Polarisation insensitive meander-type wavelength demultiplexer with large tuning range
Trommer, D.; Arps, M.; Kreissl, J.; Steingrüber, R.; Ebert, W.; Venghaus, H. | Conference Paper |
| 1998 | Selective MOMBE growth of InP-based waveguide/laser butt-joints
Kuenzel, H.; Ebert, S.; Gibis, R.; Kaiser, R.; Kizuki, H.; Malchow, S.; Urmann, G. | Journal Article |
| 1997 | Evaluation of defect densities on LP-MOVPE grown InGaAsP in dependence of InP substrate type
Franke, D.; Grote, N. | Conference Paper |
| 1997 | High-frequency behavior of waveguide integrated photodiodes monolithically integrated on InP using optical butt coupling
Umbach, A.; Leone, A.M.; Unterborsch, G. | Journal Article |
| 1997 | Highly reproducible and defect-free MOVPE overgrowth of InGaAsP-based DFB gratings
Franke, D.; Roehle, H. | Conference Paper, Journal Article |
| 1997 | Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere
Roehle, H.; Schroeter-Janssen, H.; Kaiser, R. | Conference Paper, Journal Article |
| 1997 | LP-MOVPE growth of laser structures using nitrogen carrier gas
Roehle, H.; Schroeter-Janssen, H. | Conference Paper |
| 1997 | Surface preparation for molecular beam epitaxy-regrowth on metalorganic vapour phase epitaxy grown InP and InGaAsP layers
Passenberg, W.; Schlaak, W. | Journal Article |
| 1996 | Design of fibre matched uncladded rib waveguides on InP with polarization independent fibre coupling loss of 1 dB
Weinert, C.M. | Conference Paper |
| 1996 | Hydrogen radical processing-in-situ semiconductor surface cleaning for epitaxial regrowth
Kunzel, H.; Hase, A.; Griebenow, U. | Conference Paper |
| 1996 | LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas
Roehle, H.; Schroeter-Janssen, H. | Conference Paper |
| 1996 | Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth
Umbach, A.; Waasen, S. van; Auer, U.; Bach, H.-G.; Bertenburg, R.M.; Breuer, V.; Ebert, W.; Janssen, G.; Mekonnen, G.G.; Passenberg, W.; Schlaak, W.; Schramm, C.; Seeger, A.; Tegude, F.-J.; Unterborsch, G. | Journal Article |
| 1996 | Monolithically integrated nonlinear interferometers for all-optical switching
Jahn, E.; Agrawal, N.; Ehrke, H.-J.; Pieper, W.; Franke, D.; Furst, W.; Weinert, C.M. | Conference Paper |
| 1995 | Fast 2*2 Mach-Zehnder optical space switches using InGaAsP-InP multiquantum-well structures
Agrawal, N.; Weinert, C.M.; Ehrke, H.-J.; Mekonnen, G.G.; Franke, D.; Bornholdt, C.; Langenhorst, R. | Journal Article |
| 1994 | 2*2 optical space switches using InGaAsP/InP MQW structures for 10-GHz applications
Agrawal, N.; Franke, D.; Weinert, C.M.; Bornholdt, C. | Conference Paper |
| 1994 | Integration of a tunable 4-section DBR laser within polarization diversity heterodyne receiver PICs
Kaiser, R.; Fidorra, F.; Trommer, D.; Malchow, S.; Albrecht, P.; Franke, D.; Heidrich, H.; Passenberg, W.; Schroeter-Janssen, H.; Stenzel, R.; Rehbein, W. | Conference Paper |
| 1994 | Monolithically integrated polarisation diversity heterodyne receivers on GaInAsP/InP
Kaiser, R.; Trommer, D.; Fidorra, F.; Heidrich, H.; Malchow, S.; Franke, D.; Passenberg, W.; Rehbein, W.; Schroeter-Janssen, H.; Stenzel, R.; Unterborsch, G. | Journal Article |
| 1994 | Self-consistent calculation of quantum well electron transfer structures for ultrafast optical switches
Weinert, C.M.; Agrawal, N. | Conference Paper |
| 1994 | Self-consistent finite difference method for simulation and optimization of quantum well electron transfer structures
Weinert, C.M.; Agrawal, N. | Journal Article |
| 1993 | Clock recovery based on a new type of selfpulsation in a 1.5 mu m two-section InGaAsP-InP DFB laser
As, D.J.; Eggemann, R.; Feiste, U.; Mohrle, M.; Patzak, E.; Weich, K. | Journal Article |
| 1993 | Monolithic integrated wavelength duplexer-receiver on InP
Bornholdt, C.; Trommer, D.; Unterborsch, G.; Bach, H.-G.; Venghaus, H.; Weinert, C.M. | Journal Article |
| 1993 | Polarization independent Mach-Zehnder Interferometer on III-V-semiconductors
Venghaus, H.; Weinert, C.M. | Conference Paper |
| 1993 | Vectorial simulation of passive TE/TM mode converter devices on InP
Weinert, C.M.; Heidrich, H. | Journal Article |
| 1992 | Fundamental characteristics of InGaAs/InGaAsP-MQW-SCH-lasers emitting in 1.3 mu m wavelength range
Mohrle, M.; Rosenzweig, M.; Duser, H.; Grutzmacher, D. | Journal Article |
| 1992 | Gigahertz self-pulsation in 1.5 mu m wavelength multisection DFB lasers
Mohrle, M.; Feister, U.; Horer, J.; Molt, R.; Sartorius, B. | Journal Article |
| 1992 | Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides
Künzel, H.; Grote, N.; Albrecht, P.; Böttcher, J.; Bornholdt, C. | Journal Article |
| 1992 | MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices
Agrawal, N.; Franke, D.; Grote, N.; Reier, F.W.; Schroeter-Janssen, H. | Conference Paper, Journal Article |
| 1991 | Laser properties of 1.35 mu m InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures
Mohrle, M.; Grutzmacher, D.; Rosenzweig, M.; Duser, H. | Conference Paper |
| 1991 | Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE
Rosenzweig, M.; Ebert, W.; Franke, D.; Grote, N.; Sartorius, B.; Wolfram, P. | Conference Paper, Journal Article |
| 1991 | Optical thickness mapping of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.; Wolfram, P.; Franke, D. | Journal Article |
| 1991 | Optimization and calibration of two-wavelength transmission for absolute thickness measurements of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M. | Conference Paper |
| 1991 | Theoretical investigations of optical waveguide tapers on InGaAsP/InP
Nolting, H.P.; Weinert, C.M. | Journal Article |
| 1991 | Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers
Rosenzweig, M.; Mohrle, M.; Duser, H.; Venghaus, H. | Journal Article |
| 1990 | Characteristics of 1.5 µm InGaAs/InGaAsP MQW lasers
Duser, H.; Fidorra, F.; Franke, D.; Mohrle, M.; Rosenzweig, M.; Wolfram, P.; Grutzmacher, D. | Conference Paper |
| 1990 | Control of a reactive ion etching process for InP and related materials by in-situ ellipsometry in the near infrared
Muller, R. | Conference Paper |
| 1990 | The development of a polarization-diversity heterodyne receiver-waveguide switch on InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.P.; Schlak, M.; Weinert, C.M. | Conference Paper |
| 1990 | Dry chemical etching processes for the production of InP-based components
Niggebrugge, U.; Muller, R. | Conference Paper |
| 1990 | High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors
Paraskevopoulos, A.; Bach, H.G.; Schroeter-Janssen, H.; Mekonnen, G.; Hensel, H.J.; Grote, N. | Conference Paper |
| 1990 | Meander coupler: A novel structure for WDM-applications
Kappe, F.; Bornholdt, C.; Nolting, H.-P.; Reier, F.; Stenzel, R.; Venghaus, H.; Weinert, C.M. | Conference Paper |
| 1990 | Nondestructive thickness mapping of epitaxial InGaAsP/InP layers
Sartorius, B.; Brandstattner, M. | Conference Paper |
| 1990 | Properties of two-section traveling wave amplifiers
Ludwig, R.; Moerhrle, M.; Rosenzweig, M.; Schnabel, R.; Schunk, N.; Weber, H.G. | Conference Paper |
| 1990 | Secondary ion mass spectroscopic investigation of GaInAsP/InP laser structures made by metalorganic vapor phase epitaxy regrowth
Harde, P.; Fidorra, F.; Venghaus, H. | Journal Article |
| 1990 | TE/TM mode splitters on InGaAsP/InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.; Weinert, C.M. | Journal Article |
| 1990 | WDM components on the basis of InGaAsP/InP directional couplers
Bornholdt, C.; Kappe, F.; Nolting, H.P.; Stenzel, R.; Venghaus, H.; Weinert, C.M. | Conference Paper |
| 1989 | InP based integrated laser driver circuit
Paraskevopoulos, A.; Bach, H.G.; Mekonnen, G.; Schroeter-Janssen, H.; Fiedler, F.; Grote, N. | Conference Paper |
| 1987 | Luminescence microscopy for quality control of material and processing
Satorius, B.; Franke, D.; Schlak, M. | Conference Paper, Journal Article |
| 1987 | Self-aligned low-loss totally reflecting waveguide mirrors in InGaAsP/InP
Niggebrugge, U.; Albrecht, P.; Doldissen, W.; Nolting, H.-P.; Schmid, H. | Conference Paper |
| 1987 | Self-aligned waveguide mirrors for optical integration on InGaAsP/InP
Albrecht, P.; Doldissen, W.; Niggerbrugge, U.; Nolting, H.P.; Schmid, H. | Conference Paper |
| 1985 | Experimental study of stability properties of injection-locked InGaAsP/InP laser diodes
Grosskopf, G.; Kuller, L. | Journal Article |
| 1985 | High-efficiency phase modulators in InGaAsP/InP
Bornholdt, C.; Doldissen, W.; Franke, D.; Krauser, J.; Niggebrugge, U.; Nolting, H.-P.; Schmitt, F. | Conference Paper |
| 1985 | An InGaAsP/InP double-heterojunction bipolar transistor for monolithic integration with a 1.5- mu m laser diode
Su, L.M.; Grote, N.; Kaumanns, R.; Katzschner, W.; Bach, H.G. | Journal Article |
| 1984 | A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistor
Schmitt, F.; Su, L.M.; Franke, D.; Kaumanns, R. | Journal Article |