Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2012Physics-based modeling of GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S.
Journal Article
2010Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O.
Journal Article
2010Device and design optimization for AlGaN/GaN X-band-power-amplifiers with high efficiency
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
Journal Article
2009Design of highly-efficient GaN x-band-power-amplifier MMICs
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Maier, T.; Stibal, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
Conference Paper
1999Carrier capture and escape processes in In(0.25)Ga(0.75)As-GaAs quantum-well lasers
Romero, B.; Esquivias, I.; Weisser, S.; Larkins, E.C.; Rosenzweig, J.
Journal Article
1999Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J.
Journal Article
1991Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.; Clemens, U.; Witt, A.; Wegener, M.
Conference Paper
1991Polarisation diversity waveguide network integrated on InP for a coherent optical receiver front-end
Heidrich, H.; Hamacher, M.; Albrecht, P.; Engel, H.; Hoffmann, D.; Imhof, D.; Nolting, H.-P.; Reier, F.; Weinert, C.M.
Conference Paper