Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020Demonstration of a polariton step potential by local variation of light-matter coupling in a van-der-Waals heterostructure
Rupprecht, C.; Klaas, M.; Knopf, H.; Taniguchi, T.; Watanabe, K.; Qin, Y.; Tongay, S.; Schröder, S.; Eilenberger, F.; Höfling, S.; Schneider, C.
Journal Article
2014Optical absorption spectroscopy and properties of single walled carbon nanotubes at high temperature
Roch, Aljoscha; Stepien, Lukas; Roch, Teja; Dani, Ines; Leyens, Christoph; Jost, Oliver; Leson, Andreas
Journal Article
1997Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3
Merz, C.; Kunzer, M.; Santic, B.; Kaufmann, U.; Akasaki, I.; Amano, H.
Journal Article
1996Free and bound excitons in thin wurtzite GaN layers on sapphire
Merz, C.; Kunzer, M.; Kaufmann, U.; Akasaki, I.; Amano, H.
Journal Article
1996Light generating carrier recombination and impurities in wurtzite GaN/Al2O3 grown by MOCVD
Kaufmann, U.; Kunzer, M.; Merz, C.; Akasaki, I.; Amano, H.
Conference Paper
1994On the nature of the excitonic luminescence in narrow-gap Hg1-xCdxTe -x about 0.3-.
Tomm, J.W.; Herrmann, K.H.; Hoerstel, W.; Lindstaedt, M.; Kissel, H.; Fuchs, F.
Journal Article
1994Resonant quenching of exciton photoluminescence in coupled GaAs/AlAs quantum wells - effect of exciton binding energy.
Schneider, H.; Wagner, J.; Ploog, K.
Journal Article
1992Spin-polarized excitons in pseudomorphic, strained In(0.16)Ga(0.84)As/Al(0.29)Ga(0.71)As quantum wells on a GaAs substrate
Kunzer, M.; Hendorfer, G.; Kaufmann, U.; Köhler, K.
Journal Article
1992Spin-polarized excitons in pseudomorphic, strained In0.16Ga0.84As/Al0.29Ga0.71As quantum wells on GaAs
Kunzer, M.; Hendorfer, G.; Köhler, K.; Rühle, W.W.; Kaufmann, U.
Conference Paper