| | |
|---|
| 2021 | Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects
Erlekampf, Jürgen; Rommel, Mathias; Rosshirt-Lilla, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Erlbacher, Tobias | Journal Article |
| 2018 | Defects and carrier lifetime in 4H-Silicon Carbide
Kallinger, Birgit; Erlekampf, Jürgen; Rommel, Mathias; Berwian, Patrick; Friedrich, J.; Matthus, Christian D. | Presentation |
| 2018 | Influence of substrate properties on the defectivity and minority carrier lifetime in 4H-SiC homoepitaxial layers
Kallinger, Birgit; Erlekampf, Jürgen; Roßhirt, Katharina; Berwian, Patrick; Stockmeier, Matthias; Vogel, Michael; Hens, Philip; Wischmeyer, Frank | Presentation |
| 2016 | Structural and ferroelectric properties of 0.9PMN-0.1PT thin films
Mietschke, Michael; Engelhardt, Stefan; Fähler, Sebastian; Molin, Christian; Gebhardt, Sylvia; Schultz, Ludwig; Hühne, Ruben | Journal Article |
| 2013 | Heteroepitaxial Ge-on-Si by DC magnetron sputtering
Steglich, Martin; Patzig, Christian; Berthold, Lutz; Schrempel, Frank; Füchsel, Kevin; Höche, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas | Journal Article |
| 2010 | Dislocation conversion and propagation during homoepitaxial growth of 4H-SiC
Kallinger, B.; Thomas, B.; Polster, S.; Berwian, P.; Friedrich, J. | Conference Paper |
| 2004 | Model for the expansion dynamics of the laser-induced plasma and fabrication of erbium doped planar waveguides by pulsed laser deposition and laser micromachining for up-conversion applications
Gottmann, J.; Schlaghecken, G.; Kreutz, E.W. | Conference Paper |
| 2000 | Impact of a conducting interface layer on the characteristics of integrated InP photoreceivers
Schramm, C.; Mekonnen, G.G.; Bach, H.-G.; Unterborsch, G.; Schlaak, W.; Ebert, W.; Wolfram, P. | Conference Paper |
| 2000 | MOMBE: Superior epitaxial growth for InP-based monolithically integrated photonic circuits
Gibis, R.; Kizuki, H.; Albrecht, P.; Harde, P.; Urmann, G.; Kaiser, R.; Kunzel, H. | Journal Article |
| 1997 | Strain compensated GaInAs/AlInAs tunnelling barrier MQW structure for polarisation independent optical switching
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Mörl, L.; Weinert, C.M. | Conference Paper |
| 1996 | Fabrication of a heterodyne receiver OEIC with optimized integration process using three MOVPE growth steps only
Hamacher, M.; Trommer, D.; Li, K.; Schroeter-Janssen, H.; Rehbein, W.; Heidrich, H. | Journal Article |
| 1994 | Limitations of the electro-optic response of thin potassium tantalate niobate (KTN) films caused by ferroelectric hysteresis behavior
Gerhard-Multhaupt, R.; Yilmaz, S.; Bauer, S.; Ren, W. | Journal Article |
| 1989 | Gas phase depletion in horizontal MOCVD reactors.
Neumann, G.; Winkler, K.; Bachem, K.H. | Conference Paper |
| 1985 | Molecular beam epitaxy of III-V compounds
Kunzel, H. | Journal Article |