Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Enhancing the capacitance and active surface utilization of supercapacitor electrode by graphene nanoplatelets
Pullini, Daniele; Siong, Victor; Tamvakos, Dimitrios; Lobato Ortega, Belén; Sgroi, Mauro Francesco; Veca, Antonino; Glanz, Carsten; Kolaric, Ivica; Pruna, Alina
Journal Article
2015Maßgeschneiderte thermische Spritzschichten im System Al2O3-TiO2-Cr2O3 unter besonderer Berücksichtigung der elektrischen Eigenschaften
Stahr, Carl Christoph
Dissertation
2010Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R.
Journal Article
2010Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K.
Conference Paper, Journal Article
2009Growth and electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content
Köhler, K.; Müller, S.; Waltereit, P.; Kirste, L.; Menner, H.; Bronner, W.; Quay, R.
Journal Article
2009Large-area terahertz emitters based on GaInAsN
Peter, F.; Winnerl, S.; Schneider, H.; Helm, M.; Köhler, K.
Conference Paper
2008Qualitäts- und Prozesssicherung in Lackierbetrieben: Charakterisierung der elektrischen Eigenschaften von Pulverlacken
Cudazzo, Markus; Strohbeck, Ulrich
Book Article
2008The response rate of room temperature terahertz InGaAs-based bow-tie detector with broken symmetry
Kasalynas, I.; Seliuta, D.; Simniskis, R.; Tamosiunas, V.; Vaicikauskas, V.; Grigelionis, I.; Nedzinskas, R.; Köhler, K.; Valusis, G.
Conference Paper
2008The surface potential of GaN:Si
Köhler, K.; Wiegert, J.; Menner, H.P.; Maier, M.; Kirste, L.
Journal Article
2008Terahertz detection by the entire channel of high electron mobility transistors
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Knap, W.; Grynberg, M.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.; Caban, P.; Strupinski, W.
Journal Article, Conference Paper
2008THz detection by field-effect transistors in magnetic fields: Shallow water vs. deep water mechanism of electron plasma instability
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.
Journal Article
2007Electronic and thermal properties of Sb-based QCLs operating in the first atmospheric window
Vitiello, M.S.; Scamarcio, G.; Spagnolo, V.; Yang, Q.K.; Manz, C.; Wagner, J.; Revin, D.G.; Cockburn, J.
Conference Paper
2007The two-dimensional bigradient effect and its application for GHz-THz sensing
Seliuta, D.; Gruzinskis, V.; Tamosiunas, V.; Juozapavicius, A.; Kasalynas, I.; Asmontas, S.; Valusis, G.; Steenson, P.; Chow, W.-H.; Harrison, P.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Conference Paper
2006New trends in terahertz electronics
Tamosiunas, V.; Seliuta, D.; Juozapavicius, A.; Sirmulis, E.; Valusis, G.; Fatimy, A. el; Meziani, Y.; Dyakonova, N.; Lusakowski, J.; Knap, W.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Journal Article
2005Electrical properties
Martin, H.-P.; Adler, J.
Book Article
2004Piezoelektrische Energiequellen für low-power Elektronik
Röding, Thomas; Schönecker, Andreas; Daue, Thomas; Esler, William
Conference Paper
2003Siliciumcarbid-Schaumkeramik im Abgasstrang
Adler, J.; Standke, G.; Zikoridse, G.
Conference Paper
1998Coupled cyclotron resonance transitions of bilayer 2DEG systems in GaAs
Hu, C.M.; Batke, E.; Shen, S.C.; Köhler, K.; Ganser, P.
Journal Article
199740 GHz monolithically-integrated fully-balanced VCO using 0.3 mu m HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Jakobus, T.; Hülsmann, A.; Köhler, K.; Raynor, B.
Journal Article
1996The effect of CH4/H2 ECR plasma etching on the electrical properties of p-type Hg(1-x)Cd(x)Te
Baars, J.; Keller, R.C.; Richter, H.J.; Seelmann Eggebert, M.
Conference Paper
1995Investigation of high-field conductivity and dielectric strength of nitrogen containing polycrystalline diamond films
Boettger, E.; Bluhm, A.; Jiang, X.; Schäfer, L.; Klages, C.-P.
Journal Article
1994Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Köhler, K.; Schweizer, T.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Conference Paper
1994Influence of DX center structure on Si modulation delta-doping in AlGaAs/GaAs quantum wells.
Brunthaler, G.; Seto, M.; Stöger, G.; Ostermayer, G.; Köhler, K.
Journal Article
1994Investigation of the high-field conductivity and dielectric strength of nitrogen containing polycrystalline diamond films
Böttger, E.; Bluhm, A.; Jiang, X.; Schäfer, L.; Klages, C.-P.
Journal Article
1994On the electron capture kinetics of DX centers in AlxGa1-xAs-Si.
Stöger, G.; Brunthaler, G.; Ostermayer, G.; Jantsch, W.; Wilamowski, Z.; Köhler, K.
Journal Article
1993Comparison of Si delta-doping with homogenous doping in GaAs.
Köhler, K.; Ganser, P.; Maier, M.
Journal Article
1993The electrical characteristics of Pb1-xEuxSe homojunctions.
Xu, J.; Halford, B.; Tacke, M.
Journal Article
1993Electrical properties of the anodic oxide-HgZnTe interface
Esquivias, I.; Baars, J.; Brink, D.; Eger, D.
Journal Article
1993Investigation of DX centers in AlxGa1-xAs by space charge spectroscopy.
Wöckinger, J.; Jantsch, W.; Wilamowski, Z.; Köhler, K.
Journal Article
1993Time-dependent Hall effect analysis method used for investigation of the DX center in AlGaAs-Si.
Brunthaler, G.; Stöger, G.; Aumayr, A.; Köhler, K.
Journal Article
1992Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Schweizer, T.; Köhler, K.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Conference Paper
1991Deposition and properties of diamond thin films
Klages, C.-P.
Conference Paper
1991Electrical conductivity and microstructure of metal-containing a-C-H films.
Benndorf, C.; Boettger, E.; Fryda, M.; Haubold, H.G.; Köberle, H.; Klages, C.-P.
Conference Paper
1991Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor -78/203 meV- in GaAs.
Roos, G.; Schöner, A.; Pensl, G.; Meyer, B.K.; Newman, R.C.; Wagner, J.
Journal Article
1991Modulation doped inverted and normal GaAs/AlxGa1-xAs heterostructures - influence of Si-segregation on the two-dimensional electron gas.
Bachem, K.H.; Ganser, P.; Köhler, K.; Maier, M.
Journal Article
1991Properties of anodic fluoride films on Hg1-xCdxTe
Esquivias, I.; Brink, D.; Dal Colle, M.; Baars, J.; Bruder, M.
Conference Paper
1989Recent developments and trends in nondestructive characterization of materials
Höller, P.
Conference Paper