Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
Uhnevionak, Viktoryia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter
Journal Article
2010Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O.
Journal Article
2002Contactless electron mobility evaluation of semi-insulating GaAs and InP wafers
Stibal, R.; Kretzer, U.; Jantz, W.
Conference Paper
1997Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications
Pereiaslavets, B.; Martin, G.H.; Eastman, L.F.; Yanka, R.W.; Ballingall, J.M.; Braunstein, J.; Bachem, K.H.; Ridley, B.K.
Journal Article
1996Study of carrier transport in SrS:Ce,Mn,Cl electroluminescent devices by optical method
Hüttl, B.; Kratzert, P.; Lite, K.; Reinsperger, B.; Plant, T.K.; Mauch, R.H.
Conference Paper
1994Ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures
Agrawal, N.; Wegener, M.
Conference Paper
1992Investigation of transport phenomena in pseudomorphic MODFETs
Braunstein, J.; Tasker, P.; Schweizer, T.; Hülsmann, A.; Schlechtweg, M.; Kaufel, G.; Köhler, K.
Conference Paper