Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Luminescence Properties of SiV-centers in diamond diodes
Tegetmeyer, Björn
: Ambacher, Oliver
Dissertation
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Journal Article
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Journal Article
2017Solder joint stability study of wire-based interconnection compared to ribbon interconnection
Walter, J.; Rendler, L.C.; Ebert, C.; Kraft, A.; Eitner, U.
Journal Article, Conference Paper
2017Subcell characterization in multijunction solar cells using pulsed light
Rutzinger, M.; Salzberger, M.; Nesswetter, H.; Lackner, D.; Bett, A.W.; Lugli, P.; Zimmermann, C.G.
Journal Article
2016Influence of injection current and temperature on electroluminescence of GaAs laser power converters
Kimovec, R.; Helmers, H.; Bett, A.W.; Topic, M.
Presentation
2016Microcracks in silicon wafers II: Implications on solar cell characteristics, statistics and physical origin
Demant, M.; Welschehold, T.; Kluska, S.; Rein, S.
Journal Article
2016Spatial and spectral electroluminescence for single-junction single-segment GaAs laser power converter characterization
Kimovec, R.; Helmers, H.; Bett, A.W.; Topic, M.
Presentation
2016Temperature and injection current dependent electroluminescence for evaluation of single-junction single-segment GaAs laser power converter
Kimovec, R.; Helmers, H.; Bett, A.W.; Topic, M.
Journal Article
2015Analysing the effect of crystal size and structure in highly efficient CH3NH3Pbl3 perovskite solar cells by spatially resolved photo- and electroluminescence imaging
Mastroianni, S.; Heinz, F.D.; Im, J.-H.; Veurman, W.; Padilla, M.; Schubert, M.C.; Würfel, U.; Grätzel, M.; Park, N.-G.; Hinsch, A.
Journal Article
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Journal Article
2015Structural parameters effect on the electrical and electroluminescence properties of silicon nanocrystals/SiO2 superlattices
Lopez-Vidrier, J.; Berencen, Y.; Hernandez, S.; Mundet, B.; Gutsch, S.; Laube, J.; Hiller, D.; Löper, P.; Schnabel, M.; Janz, S.; Zacharias, M.; Garrido, B.
Journal Article
2014Identifying the impact of surface recombination at electrodes in organic solar cells by means of electroluminescence and modeling
Reinhardt, J.; Grein, M.; Bühler, C.; Schubert, M.; Würfel, U.
Journal Article
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2013Bandgap determination based on electrical quantum efficiency
Helmers, H.; Karcher, C.; Bett, A.W.
Journal Article
2013Temperature dependent electroluminescence and voltages of multi-junction solar cells
Karcher, C.; Helmers, H.; Schachtner, M.; Dimroth, F.; Bett, A.W.
Conference Paper
2012Investigations on cracks in embedded solar cells after thermal and mechanical loading
Sander, M.; Dietrich, S.; Pander, M.; Ebert, M.; Thormann, S.; Wendt, J.; Bagdahn, J.
Conference Paper
2011Micro-electroluminescence of cyan InGaN-based multiple quantum well structures
Meyer, T.; Peter, M.; Danhof, J.; Schwarz, U.T.; Hahn, B.
Journal Article
2009Measuring the profile of the emission zone in polymeric organic light-emitting diodes
Gather, M.C.; Flämmich, M.; Danz, N.; Michaelis, D.; Meerholz, K.
Journal Article
2009Packaging influence on laser bars of different dimensions
Westphalen, T.; Leers, M.; Werner, M.; Traub, M.; Hoffmann, H.-D.; Ostendorf, R.
Conference Paper
2007High temperature reliability of organic light emitting diodes
Lesiuk, P.
Thesis
2006Micro-cavity organic light emitting diodes for biochip applications
Roma, G.; Belardini, A.; Michelotti, F.; Danz, N.; Pace, A.; Sarto, F.; Montereali, R.M.
Journal Article
2005Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes
Hoffmann, D.; Gin, A.; Wei, Y.; Hood, A.; Fuchs, F.; Razeghi, M.
Journal Article
20011300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
Kovshb, A.R.; Maleev, N.A.; Sakharov, A.V.; Moeller, C.; Krestnikov, I.L.; Kovsh, A.R.; Mikhrin, S.S.; Zhukov, A.E.; Ustinov, V.M.; Passenberg, W.; Pawlowski, E.; Kuenzel, H.; Tsatsul'nikov, A.F.; Ledentsov, N.N.; Bimberg, D.; Alferov, Z.I.
Journal Article, Conference Paper
1998Progress of electroluminescence display development at HHI
Velthaus, K.-O.
Conference Paper
1997The current status of thin-film electroluminescence
Mauch, R.H.
Journal Article
1996Electrical properties of SrS:Ce EL devices
Troppenz, U.; Plant, T.K.; Hüttl, B.; Velthaus, K.O.; Mauch, R.H.
Conference Paper, Journal Article
1996Electro-optic excitation/de-excitation effects in SrS:Ce ACTFEL devices from 15 to 300 K
Plant, T.K.; Troppenz, U.; Hüttl, B.; Velthaus, K.O.; Mauch, R.H.
Conference Paper, Journal Article
1996Electroluminescence in thin films
Mauch, R.H.
Conference Paper, Journal Article
1996Electroluminescent materials
Mauch, R.H.
Conference Paper
1996Luminescence properties of SrS:Ce thin films
Hüttl, B.; Velthaus, K.-O.; Troppenz, U.; Kreissl, J.; Mauch, R.H.
Conference Paper
1996Luminescence properties of SrS:Ce3+, Cl thin films
Hüttl, B.; Velthaus, K.O.; Troppenz, U.; Mauch, R.H.
Conference Paper, Journal Article
1993Blue and green electroluminescence from a porous silicon device
Steiner, P.; Kozlowski, F.; Lang, W.
Journal Article
1993Mechanisms of thin film color electroluminescence
Mach, R.; Mueller, G.O.
Conference Paper
1993A phenomenological investigation on porous silicon electroluminescence
Steiner, P.; Lang, W.; Kozlowski, F.; Sandmaier, H.
Conference Paper
1992Current induced light emission from nanocrystalline silicon structures
Richter, A.; Kozlowski, F.; Steiner, P.; Sandmaier, H.; Ruge, I.; Lang, W.
Conference Paper
1992Hot-electron electroluminescence in GaAs transistors.
Zappe, H.P.
Journal Article
1991Current induced light emission from a porous silicon device
Steiner, P.; Kozlowski, F.; Lang, W.; Richter, A.
Journal Article
1991Study of lower-dimensional transport by electroluminescence.
Zappe, H.P.
Book Article
1990Electroluminescence from Gunn domains in GaAs MESFETS as a means for defect detection
Jantz, W.; Zappe, H.P.
Conference Paper
1990Electroluminescence from Gunn domains in GaAs/AlGaAs heterostructure field-effect transistors.
Moglestue, C.; Zappe, H.P.
Journal Article
1990Mechanisms for the emission of visible light from GaAs field-effect transistors
As, D.J.; Zappe, H.P.
Journal Article