Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013Anisotropy and inhomogeneity measurement of the transport properties of spark plasma sintered thermoelectric materials
Jacquot, A.; Rull, M.; Moure, A.; Fernandez-Lozano, J.F.; Martin-Gonzalez, M.; Saleemi, M.; Toprak, M.S.; Muhammed, M.; Jaegle, M.
Conference Paper
2013Correlation between microstructure and electrical resistivity of hexagonal boron nitride ceramics
Steinborn, C.; Herrmann, M.; Keitel, U.; Schönecker, A.; Räthel, J.; Rafaja, D.; Eichler, J.
Journal Article
2010Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures
Lim, T.; Aidam, R.; Kirste, L.; Waltereit, P.; Müller, S.; Ambacher, O.
Journal Article, Conference Paper
2010Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R.
Journal Article
2010Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K.
Conference Paper, Journal Article
2009Determination of surface potential of GaN:Si
Köhler, K.; Maier, M.; Kirste, L.; Wiegert, J.; Menner, H.
Journal Article, Conference Paper
2009Growth and electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content
Köhler, K.; Müller, S.; Waltereit, P.; Kirste, L.; Menner, H.; Bronner, W.; Quay, R.
Journal Article
2009Large-area terahertz emitters based on GaInAsN
Peter, F.; Winnerl, S.; Schneider, H.; Helm, M.; Köhler, K.
Conference Paper
2009Optical modeling of free electron behavior in highly doped ZnO films
Ruske, F.; Pflug, A.; Sittinger, V.; Szyszka, B.; Greiner, D.; Rech, B.
Journal Article
2008Low temperature deposition of indium tin oxide films by plasma ion-assisted evaporation
Füchsel, K.; Schulz, U.; Kaiser, N.; Tünnermann, A.
Journal Article
2008The response rate of room temperature terahertz InGaAs-based bow-tie detector with broken symmetry
Kasalynas, I.; Seliuta, D.; Simniskis, R.; Tamosiunas, V.; Vaicikauskas, V.; Grigelionis, I.; Nedzinskas, R.; Köhler, K.; Valusis, G.
Conference Paper
2008The surface potential of GaN:Si
Köhler, K.; Wiegert, J.; Menner, H.P.; Maier, M.; Kirste, L.
Journal Article
2008Terahertz detection by the entire channel of high electron mobility transistors
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Knap, W.; Grynberg, M.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.; Caban, P.; Strupinski, W.
Journal Article, Conference Paper
2008THz detection by field-effect transistors in magnetic fields: Shallow water vs. deep water mechanism of electron plasma instability
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.
Journal Article
2007The two-dimensional bigradient effect and its application for GHz-THz sensing
Seliuta, D.; Gruzinskis, V.; Tamosiunas, V.; Juozapavicius, A.; Kasalynas, I.; Asmontas, S.; Valusis, G.; Steenson, P.; Chow, W.-H.; Harrison, P.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Conference Paper
2006Correlation of optical, electrical and structural properties of metal oxide - silver multilayer stacks deposited onto polymer film by magnetron sputtering
Thielsch, R.; Boehme, T.; Wahl, A.; Fahland, M.; Voigt, T.; Zysitzki, O.
Conference Paper
2006The influence of porosity on the electrical properties of liquid-phase sintered silicon carbide
Ihle, J.; Martin, H.-P.; Herrmann, M.; Obenaus, P.; Adler, J.; Hermel, W.; Michaelis, A.
Journal Article
2006New trends in terahertz electronics
Tamosiunas, V.; Seliuta, D.; Juozapavicius, A.; Sirmulis, E.; Valusis, G.; Fatimy, A. el; Meziani, Y.; Dyakonova, N.; Lusakowski, J.; Knap, W.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Journal Article
2005Hydrogen doping of DC sputtered ZnO:Al films from novel target material
Ruske, F.; Sittinger, V.; Werner, W.; Szyszka, B.; Osten, K.U. van; Dietrich, K.; Rix, R.
Journal Article
2004Bi-layered PZT films by combining thick and thin film technology
Gebhardt, S.; Seffner, L.; Schönecker, A.; Rödel, J.; Beckert, W.; Kreher, W.; Sotnikov, A.; Häßler, W.; Reuter, S.; Hübler, A.
Conference Paper, Journal Article
2004Electrical properties of Ag films on polyethylene terephthalate deposited by magnetron sputtering
Charton, C.; Fahland, M.
Journal Article
2003In situ generated homogeneous and functionally graded ceramic materials derived from polysilazane
Reschke, S.; Haluschka, C.; Riedel, R.; Lences, Z.; Galusek, D.
Journal Article
2003Switching behavior of plasma polymer films containing silver nanoparticles
Kiesow, A.; Morris, J.E.; Radehaus, C.; Heilmann, A.
Journal Article
1998Coupled cyclotron resonance transitions of bilayer 2DEG systems in GaAs
Hu, C.M.; Batke, E.; Shen, S.C.; Köhler, K.; Ganser, P.
Journal Article
199740 GHz monolithically-integrated fully-balanced VCO using 0.3 mu m HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Jakobus, T.; Hülsmann, A.; Köhler, K.; Raynor, B.
Journal Article
1997Insulating diamond coatings on Tungsten electrodes
Matthée, T.; Schäfer, L.; Schmidt, A.; Klages, C.-P.
Journal Article, Conference Paper
1996The effect of CH4/H2 ECR plasma etching on the electrical properties of p-type Hg(1-x)Cd(x)Te
Baars, J.; Keller, R.C.; Richter, H.J.; Seelmann Eggebert, M.
Conference Paper
1995Investigation of high-field conductivity and dielectric strength of nitrogen containing polycrystalline diamond films
Boettger, E.; Bluhm, A.; Jiang, X.; Schäfer, L.; Klages, C.-P.
Journal Article
1994Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Köhler, K.; Schweizer, T.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Conference Paper
1994High field conductivity of polycrystalline diamond films
Boettger, E.; Jiang, X.; Klages, C.-P.
Journal Article, Conference Paper
1994Influence of DX center structure on Si modulation delta-doping in AlGaAs/GaAs quantum wells.
Brunthaler, G.; Seto, M.; Stöger, G.; Ostermayer, G.; Köhler, K.
Journal Article
1994Investigation of the high-field conductivity and dielectric strength of nitrogen containing polycrystalline diamond films
Böttger, E.; Bluhm, A.; Jiang, X.; Schäfer, L.; Klages, C.-P.
Journal Article
1994On the electron capture kinetics of DX centers in AlxGa1-xAs-Si.
Stöger, G.; Brunthaler, G.; Ostermayer, G.; Jantsch, W.; Wilamowski, Z.; Köhler, K.
Journal Article
1993Comparison of Si delta-doping with homogenous doping in GaAs.
Köhler, K.; Ganser, P.; Maier, M.
Journal Article
1993The electrical characteristics of Pb1-xEuxSe homojunctions.
Xu, J.; Halford, B.; Tacke, M.
Journal Article
1993Electrical properties of the anodic oxide-HgZnTe interface
Esquivias, I.; Baars, J.; Brink, D.; Eger, D.
Journal Article
1993Investigation of DX centers in AlxGa1-xAs by space charge spectroscopy.
Wöckinger, J.; Jantsch, W.; Wilamowski, Z.; Köhler, K.
Journal Article
1993Time-dependent Hall effect analysis method used for investigation of the DX center in AlGaAs-Si.
Brunthaler, G.; Stöger, G.; Aumayr, A.; Köhler, K.
Journal Article
1992Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Schweizer, T.; Köhler, K.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Conference Paper
1991Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor -78/203 meV- in GaAs.
Roos, G.; Schöner, A.; Pensl, G.; Meyer, B.K.; Newman, R.C.; Wagner, J.
Journal Article
1991Modulation doped inverted and normal GaAs/AlxGa1-xAs heterostructures - influence of Si-segregation on the two-dimensional electron gas.
Bachem, K.H.; Ganser, P.; Köhler, K.; Maier, M.
Journal Article