Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2009Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes"
Toumi, S.; Ferhat-Hamida, A.; Boussouar, L.; Sellai, A.; Ouennoughi, Z.; Ryssel, H.
Journal Article
1999Cyclotron mass of correlated two-dimensional electron GAS systems in GaAs
Manger, M.; Batke, E.; Köhler, K.; Ganser, P.
Conference Paper
1999Transport parameters of 2D systems derived from microwave transmission experiments
Brensing, A.; Bauhofer, W.; Köhler, K.
Conference Paper
1998Interaction ruled temperature dependence of the electron cyclotron mass in GaAs heterojunctions
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Journal Article
1995Boron doped diamond films: electrical and optical characterization and the effect of compensating nitrogen
Locher, R.; Wagner, J.; Fuchs, F.; Wild, C.; Hiesinger, P.; Gonon, P.; Koidl, P.
Journal Article
1994Influence of Coulombic broadened DX center energy levels on free electron concentration in delta-doped AlxGa1-xAs/GaAs quantum wells
Brunthaler, G.; Seto, M.; Stöger, G.; Köhler, K.
Journal Article